Standard SRAM, 64KX16, 15ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | BGA |
| 包装说明 | LFBGA, BGA48,6X8,30 |
| 针数 | 48 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | 3A991.B.2.A |
| Is Samacsys | N |
| 最长访问时间 | 15 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | S-PBGA-B48 |
| JESD-609代码 | e0 |
| 长度 | 7 mm |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 16 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端子数量 | 48 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 64KX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | LFBGA |
| 封装等效代码 | BGA48,6X8,30 |
| 封装形状 | SQUARE |
| 封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL |
| 峰值回流温度(摄氏度) | 225 |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.34 mm |
| 最大待机电流 | 0.01 A |
| 最小待机电流 | 3.15 V |
| 最大压摆率 | 0.13 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn63Pb37) |
| 端子形式 | BALL |
| 端子节距 | 0.75 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 |
| 宽度 | 7 mm |
| Base Number Matches | 1 |

| IDT71V016SA15BFI8 | IDT71V016SA15BF8 | IDT71V016SA20BF8 | IDT71V016SA10BF8 | IDT71V016SA20BFI8 | IDT71V016SA12BF8 | IDT71V016SA12BFI8 | |
|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 64KX16, 15ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 15ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 20ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 20ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 | Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 7 X 7 MM, PLASTIC, FBGA-48 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
| 包装说明 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 | LFBGA, BGA48,6X8,30 |
| 针数 | 48 | 48 | 48 | 48 | 48 | 48 | 48 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 15 ns | 15 ns | 20 ns | 10 ns | 20 ns | 12 ns | 12 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | S-PBGA-B48 | S-PBGA-B48 | S-PBGA-B48 | S-PBGA-B48 | S-PBGA-B48 | S-PBGA-B48 | S-PBGA-B48 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 7 mm | 7 mm | 7 mm | 7 mm | 7 mm | 7 mm | 7 mm |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 48 | 48 | 48 | 48 | 48 | 48 | 48 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 70 °C | 70 °C | 70 °C | 85 °C | 70 °C | 85 °C |
| 组织 | 64KX16 | 64KX16 | 64KX16 | 64KX16 | 64KX16 | 64KX16 | 64KX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | LFBGA | LFBGA | LFBGA | LFBGA | LFBGA | LFBGA | LFBGA |
| 封装等效代码 | BGA48,6X8,30 | BGA48,6X8,30 | BGA48,6X8,30 | BGA48,6X8,30 | BGA48,6X8,30 | BGA48,6X8,30 | BGA48,6X8,30 |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH | GRID ARRAY, LOW PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度(摄氏度) | 225 | 225 | 225 | 225 | 225 | 225 | 225 |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.34 mm | 1.34 mm | 1.34 mm | 1.34 mm | 1.34 mm | 1.34 mm | 1.34 mm |
| 最大待机电流 | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
| 最小待机电流 | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V | 3.15 V |
| 最大压摆率 | 0.13 mA | 0.13 mA | 0.12 mA | 0.16 mA | 0.12 mA | 0.15 mA | 0.16 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3.15 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.75 mm | 0.75 mm | 0.75 mm | 0.75 mm | 0.75 mm | 0.75 mm | 0.75 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
| 宽度 | 7 mm | 7 mm | 7 mm | 7 mm | 7 mm | 7 mm | 7 mm |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - | - |
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