1N5629 thru 1N5665A
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru
1N5665A are JEDEC registered selections for unidirectional devices. All
have the same high Peak Pulse Power rating of 1500 W with extremely fast
response times. They are also available in military qualified selections as
described in the Features section herein. They are most often used for
protecting against transients from inductive switching environments,
induced RF effects, or induced secondary lightning effects as found in
lower surge levels of IEC61000-4-5. They are also very successful in
protecting airborne avionics and electrical systems. Since their response
time is virtually instantaneous, they can also protect from ESD and EFT per
IEC61000-4-2 and IEC61000-4-4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-13
(DO-202AA)
FEATURES
•
Unidirectional TVS series for thru-hole mounting
•
Suppresses transients up to 1500 watts @ 10/1000 µs
(see Figure 1)
•
Clamps transient in less than 100 pico seconds
•
Working voltage (V
WM
) range 5 V to 171 V
•
Hermetic sealed DO-13 metal package
•
JAN/TX/TXV military qualifications also available for
the tighter tolerance “A” suffix devices per MIL-PRF-
19500/500 by adding the JAN, JANTX, or JANTXV
prefix, e.g. JANTXV1N5629A, etc.
•
For bidirectional TVS in the same DO-13 package,
see separate data sheet for the 1N6036 – 1N6072A
series (also military qualified)
•
Surface mount equivalent packages also available as
SMCJ5.0 - SMCJ170CA or SMCG5.0 – SMCG170CA
in separate data sheet (consult factory for other
surface mount options)
•
Plastic axial-leaded equivalents available in the
1N6267 – 1N6303A series in separate data sheet
APPLICATIONS / BENEFITS
•
Protection from switching transients and induced RF
•
ESD & EFT protection per IEC 61000-4-2 and -4-4
•
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: 1N5629 to 1N5665A
Class 2: 1N5629 to 1N5663A
Class 3: 1N5629 to 1N5655A
Class 4: 1N5629 to 1N5648A
•
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 : 1N5629 to 1N5658A
Class 2: 1N5629 to 1N5651A
Class 3: 1N5629 to 1N5643A
Class 4: 1N5629 to 1N5636A
•
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: 1N5629 to 1N5642A
Class 3: 1N5629 to 1N5635A
•
Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
•
1500 Watts for 10/1000
µs
with repetition rate of 0.01% or
o
less*
at lead temperature (T
L
) 25 C (See Figs. 1, 2, & 4)
•
Operating & Storage Temperatures: -65
o
to +175
o
C
•
THERMAL RESISTANCE: 50
o
C/W junction to lead at
0.375 inches (10 mm) from body or 110
o
C/W junction to
2
ambient when mounted on FR4 PC board with 4 mm
copper pads (1 oz) and track width 1 mm, length 25 mm
•
DC Power Dissipation
*
: 1 Watt at T
L
< +125
o
C 3/8” (10
mm) from body (see derating in Fig 3 and note below)
•
Forward surge current: 200 Amps for 8.3ms half-sine
wave at T
A
= +25
o
C
•
Solder Temperatures: 260
o
C for 10 s (maximum)
•
•
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method
2026
POLARITY: Cathode connected to case and polarity
indicated by diode symbol
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
1N5629 thru 1N5665A
5629 thru 1N5665A
•
•
•
•
•
*
TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
Copyright
2002
11-06-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5629 thru 1N5665A
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
JEDEC
Type
No.*
1N5661
1N5661A
1N5662
1N5662A
1N5663
1N5663A
1N5664
1N5664A
1N5665
1N5665A
Breakdown
Voltage
V
(BR)
@ I
(BR)
Min.
V
135
143
144
152
153
162
162
171
180
190
Breakdown
Current
I
(BR)
Max.
V
165
158
176
168
187
179
198
189
220
210
Rated
Standoff
Voltage
V
WM
V
121
128
130
136
138
145
146
154
162
171
Maximum
Standby
Current
I
D
@ V
WM
µA
5
5
5
5
5
5
5
5
5
5
Maximum
Clamping
Voltage
V
C
@ I
PP
V
215
207
230
219
244
234
258
246
287
274
mA
1
1
1
1
1
1
1
1
1
1
Maximum
Peak
Pulse
Current
I
PP
A
7.0
7.2
6.5
6.8
6.2
6.4
5.8
6.1
5.2
5.5
Maximum
Temperature
Coefficient of V
(BR)
α
V(BR)
%/ C
.108
.108
.108
.108
.108
.108
.108
.108
.108
.108
o
WWW .
Microsemi
.C
OM
* No suffix = 10% tolerance, suffix A = 5% tolerance. Suffix A also available in military qualified types with a JAN, JANTX, or JANTXV prefix.
NOTES: V
(BR)
is measured after I
(BR)
has been applied for < 300ms.
Forward voltage
V
F
at 100 amps peak 8.3 ms is 3.5 volts max.
Symbol
V
WM
V
(BR)
V
C
SYMBOLS & DEFINITIONS
Definition
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1.)
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25
o
C
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the
peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise
due to both the series resistance and thermal rise and positive temperature coefficient (
α
V(BR)
)
Peak Pulse Current: The peak current during the impulse (See Figure 2)
Peak Pulse Power: The pulse power as determined by the product of V
C
and I
PP
Standby Current: The current at the standoff voltage (V
WM
)
Breakdown Current: The current used for measuring Breakdown Voltage (V
(BR)
)
I
PP
P
PP
I
D
I
(BR)
NOTE 1: A TVS is normally selected according to the rated “Standoff Voltage” V
WM
that should be equal to or greater than the dc or
continuous peak operating voltage level.
GRAPHS
100
Peak Pulse Power (P
PP
) in Kw
Exponential wave-form
(See FIG. 2)
10
Pulse current (I
P
) in percent of I
PP
1N5629 thru 1N5665A
5629 thru 1N5665A
Peak Value
Square-wave pulse
1.0
I
PP
Pulse time duration (tp) is
defined as that point where
I
P
decays to 50% of peak
value (I
PP
).
0.1Kw
100ns
1µs
10µs
100µs
1ms
10ms
Pulse Time (tp)
FIG. 1 –
Non-repetive peak pulse power rating curve
NOTE: Peak power defined as peak voltage times peak current
time (t) in milliseconds
FIG. 2
Pulse wave form for exponential surge
Copyright
2002
11-06-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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