8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
8Mb SYNCBURST
™
SRAM
FEATURES
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (V
DD
)
• Separate +3.3V or +2.5V isolated output buffer
supply (V
DD
Q)
• SNOOZE MODE for reduced-power standby
• Single-cycle deselect (Pentium
®
BSRAM-compatible)
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL
WRITE
• Three chip enables for simple depth expansion
and address pipelining
• Clock-controlled and registered addresses, data
I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control (interleaved or linear burst)
• Automatic power-down for portable applications
• 100-pin TQFP package
• 165-pin FBGA package
• Low capacitive bus loading
• x18, x32, and x36 versions available
MT58L512L18P, MT58L256L32P, MT58L256L36P;
MT58L512V18P, MT58L256V32P, MT58L256V36P
3.3V V
DD
, 3.3V or 2.5V I/O, Pipelined, Single-Cycle
Deselect
100-Pin TQFP
1
165-Pin FBGA
OPTIONS
• Timing (Access/Cycle/MHz)
3.5ns/6ns/166 MHz
4.0ns/7.5ns/133 MHz
5ns/10ns/100 MHz
• Configurations
3.3V I/O
512K x 18
256K x 32
256K x 36
2.5V I/O
512K x 18
256K x 32
256K x 36
• Packages
100-pin TQFP (2-chip enable)
100-pin TQFP (3-chip enable)
165-pin, 13mm x 15mm FBGA
• Operating Temperature Range
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)**
Part Number Example:
MARKING
-6
-7.5
-10
MT58L512L18P
MT58L256L32P
MT58L256L36P
MT58L512V18P
MT58L256V32P
MT58L256V36P
T
S
F*
None
IT
NOTE:
1. JEDEC-standard MS-026 BHA (LQFP).
* A Part Marking Guide for the FBGA devices can be found on Micron’s
Web site—http://www.micron.com/support/index.html.
** Industrial temperature range offered in specific speed grades and
configurations. Contact factory for more information.
GENERAL DESCRIPTION
The Micron
®
SyncBurst
™
SRAM family employs
high-speed, low-power CMOS designs that are fabri-
cated using an advanced CMOS process.
Micron’s 8Mb SyncBurst SRAMs integrate a 512K x
18, 256K x 32, or 256K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single-clock in-
put (CLK). The synchronous inputs include all ad-
dresses, all data inputs, active LOW chip enable (CE#),
two additional chip enables for easy depth expansion
(CE2, CE2#), burst control inputs (ADSC#, ADSP#,
ADV#), byte write enables (BWx#) and global write
MT58L512L18PT-6
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L512L18P_C.p65 – Rev. 2/02
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
FUNCTIONAL BLOCK DIAGRAM
512K X 18
19
SA0, SA1, SAs
MODE
ADV#
CLK
ADDRESS
REGISTER
19
17
19
2
SA0-SA1
SA1'
BINARY Q1
COUNTER AND
LOGIC
CLR
Q0
SA0'
ADSC#
ADSP#
BYTE “b”
WRITE REGISTER
BYTE “b”
WRITE DRIVER
9
512K x 9 x 2
MEMORY
ARRAY
9
18
SENSE
AMPS
18
BWb#
OUTPUT
18
REGISTERS
OUTPUT
BUFFERS
18
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “a”
WRITE REGISTER
BYTE “a”
WRITE DRIVER
E
DQs
DQPa
DQPb
ENABLE
REGISTER
18
PIPELINED
ENABLE
2
INPUT
REGISTERS
FUNCTIONAL BLOCK DIAGRAM
256K X 32/36
18
SA0, SA1, SAs
ADDRESS
REGISTER
18
16
SA0-SA1
18
MODE
ADV#
CLK
Q1
SA1'
BINARY
COUNTER
SA0'
CLR
Q0
ADSC#
ADSP#
BWd#
BYTE “d”
WRITE REGISTER
BYTE “c”
WRITE REGISTER
9
BWc#
BYTE
“c”
WRITE DRIVER
BYTE
“b”
WRITE DRIVER
BYTE
“a”
WRITE DRIVER
9
256K x 8 x 4
(x32)
256K x 9 x 4
(x36)
36
SENSE
AMPS
36
OUTPUT
REGISTERS 36
BWb#
BYTE “b”
WRITE REGISTER
9
MEMORY
ARRAY
OUTPUT
BUFFERS
E
36
DQs
DQPa
DQPb
DQPc
DQPd
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “a”
WRITE REGISTER
9
INPUT
REGISTERS
ENABLE
REGISTER
36
PIPELINED
ENABLE
4
NOTE:
Functional Block Diagrams illustrate simplified device operation. See Truth Table, Pin Descriptions, and timing diagrams
for detailed information.
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L512L18P_C.p65 – Rev. 2/02
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
GENERAL DESCRIPTION (continued)
(GW#). Note that CE2# is not available on the
T Version.
Asynchronous inputs include the output enable
(OE#), clock (CLK) and snooze enable (ZZ). There is also
a burst mode input (MODE) that selects between inter-
leaved and linear burst modes. The data-out (Q), en-
abled by OE#, is also asynchronous. WRITE cycles can
be from one to two bytes wide (x18) or from one to four
bytes wide (x32/x36), as controlled by the write control
inputs.
Burst operation can be initiated with either address
status processor (ADSP#) or address status controller
(ADSC#) inputs. Subsequent burst addresses can be
internally generated as controlled by the burst advance
input (ADV#).
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes
to be written. During WRITE cycles on the x18 device,
BWa# controls DQa pins and DQPa; BWb# controls
DQb pins and DQPb. During WRITE cycles on the x32
and x36 devices, BWa# controls DQa pins and DQPa;
BWb# controls DQb pins and DQPb; BWc# controls
DQc pins and DQPc; BWd# controls DQd pins and
DQPd. GW# LOW causes all bytes to be written. Parity
bits are only available on the x18 and x36 versions.
This device incorporates a single-cycle deselect fea-
ture during READ cycles. If the device is immediately
deselected after a READ cycle, the output bus goes to a
High-Z state
t
KQHZ nanoseconds after the rising edge
of clock.
Micron’s 8Mb SyncBurst SRAMs operate from a
+3.3V V
DD
power supply, and all inputs and outputs are
TTL-compatible. Users can choose either a 3.3V or 2.5V
I/O version. The device is ideally suited for Pentium
and PowerPC pipelined systems and systems that ben-
efit from a very wide, high-speed data bus. The device
is also ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bit-
wide applications.
Please refer to Micron’s Web site (www.micron.com/
sramds)
for the latest data sheet.
TQFP PINOUTS
At the time of the writing of this data sheet, there are
two pinouts in the industry. Micron will support both
pinouts for this part.
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L512L18P_C.p65 – Rev. 2/02
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
TQFP PIN ASSIGNMENT TABLE
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
x32/x36
NF/DQPc*
DQc
DQc
V
DD
Q
V
SS
NC
DQc
NC
DQc
DQb
DQc
DQb
DQc
V
SS
V
DD
Q
DQb
DQc
DQb
DQc
V
DD
V
DD
NC
V
SS
DQb
DQd
DQb
DQd
V
DD
Q
V
SS
DQb
DQd
DQb
DQd
DQPb
DQd
NC
DQd
x18
NC
NC
NC
PIN #
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
x18
x32/x36
V
SS
V
DD
Q
DQd
DQd
NF/DQPd*
MODE
SA
SA
SA
SA
SA1
SA0
DNU
DNU
V
SS
V
DD
NF
NF (T Version)
SA
(S Version)
SA
SA
SA
SA
SA
SA
SA
NC
NC
NC
PIN #
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
x32/x36
NF/DQPa*
DQa
DQa
V
DD
Q
V
SS
NC
DQa
NC
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
ZZ
V
DD
NC
V
SS
DQa
DQb
DQa
DQb
V
DD
Q
V
SS
DQa
DQb
DQa
DQb
DQPa
DQb
NC
DQb
x18
NC
NC
NC
PIN #
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
x18
x32/x36
V
SS
V
DD
Q
DQb
DQb
NF/DQPb*
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
SA
(T Version)
CE2# (S Version)
BWa#
BWb#
NC
BWc#
NC
BWd#
CE2
CE#
SA
SA
NC
NC
SA
*No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version.
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L512L18P_C.p65 – Rev. 2/02
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
PIN ASSIGNMENT (TOP VIEW)
100-PIN TQFP, 2-CHIP ENABLE,
T VERSION
SA
NC
NC
V
DD
Q
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
SA
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x18
SA
SA
SA
SA
SA
SA
SA
NF
NF
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
SA
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NF/DQPb*
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NF/DQPa*
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
DD
V
DD
NC
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQPb
NC
V
SS
V
DD
Q
NC
NC
NC
x32/x36
SA
SA
SA
SA
SA
SA
SA
NF
NF
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
*No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version.
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L512L18P_C.p65 – Rev. 2/02
NF/DQPc*
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
DD
V
DD
NC
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NF/DQPd*
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
