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1N5550-1

产品描述3 A, 200 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小193KB,共6页
制造商Microsemi
官网地址https://www.microsemi.com
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1N5550-1概述

3 A, 200 V, SILICON, RECTIFIER DIODE

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1N5550 thru 1N5554
VOIDLESS HERMETICALLY SEALED STANDARD
RECOVERY GLASS RECTIFIERS
Qualified to MIL-PRF-19500/420
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. These industry-recognized 5.0 amp rated
rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed
with voidless-glass construction using an internal “Category
1”
metallurgical bond. These
devices are also available in surface mount MELF package configurations. Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both through-
hole and surface mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
FEATURES
JEDEC registered 1N5550 thru 1N5554 series.
Voidless hermetically sealed glass package.
Extremely robust construction.
Quadruple-layer passivation.
Internal “Category
1”
metallurgical bonds.
JAN, JANTX, JANTXV and JANS qualified versions available per MIL-PRF-19500/420.
RoHS compliant versions available (commercial grade only).
“B” Package
Also available in:
“B” SQ-MELF
(D-5B) Package
(surface mount)
1N5550US – 1N5554US
APPLICATIONS / BENEFITS
Standard recovery 5 amp 200 to 1000 volts rectifier series.
Military and other high-reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Extremely robust construction.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
@
T
A
= 25
o
C
unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Thermal Impedance @ 10 ms heating time
Maximum Forward Surge Current (8.3 ms half sine)
(1)
o
Average Rectified Forward Current
@ T
L
= 30 C
(3)
o
Average Rectified Forward Current
@ T
A
= 55 C
o
@ T
A
= 100 C
Working Peak Reverse Voltage
1N5550
1N5551
1N5552
1N5553
1N5554
Solder Temperature @ 10 s
See notes on next page.
Symbol
T
J
and T
STG
R
ӨJL
Z
ӨJX
I
FSM
I
O(L)
(2)
I
O2
(4)
I
O3
V
RWM
Value
-65 to +175
22
1.5
100
5
3
2
200
400
600
800
1000
260
Unit
C
C/W
o
C/W
A
A
A
A
V
o
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T
SP
o
C
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 1 of 6

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