ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Dual Channel, SOIC-8 Package
FEATURES
A1
C2
A3
C4
i179018-2
8C
7E
6C
5E
•
•
•
•
i179025
DESCRIPTION
The ILD205T, ILD206T, ILD207T, ILD211T, ILD213T,
ILD217T are optically coupled pairs with a gallium arsenide
infrared LED and a silicon NPN phototransistor. Signal
information, including a DC level, can be transmitted by the
device while maintaining a high degree of electrical isolation
between input and output. The ILD205T, ILD206T, ILD207T,
ILD211T, ILD213T, ILD217T come in a standard SOIC-8
small outline package for surface mounting which makes it
ideally suited for high density applications with limited
space. In addition to eliminating through-holes
requirements, this package conforms to standards for
surface mounted devices.
A specified minimum and maximum CTR allows a narrow
tolerance in the electrical design of the adjacent circuits. The
high BV
CEO
of 70 V gives a higher safety margin compared
to the industry standard of 30 V.
Two channel coupler
SOIC-8 surface mountable package
Standard lead spacing of 0.05"
Available only on tape and reel option
(conforms to EIA standard 481-2)
• Isolation test voltage, 4000 V
RMS
• Compatible with dual wave, vapor phase and
IR reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
ORDERING INFORMATION
SIOC-8
I
L
D
2
PART NUMBER
#
#
T
6.1 mm
AGENCY CERTIFIED/PACKAGE
UL, cUL
SOIC-8
40 to 80
ILD205T
63 to 125
ILD206T
CTR (%)
10 mA
100 to 200
ILD207T
20
ILD211T
100
ILD213T
1 mA
100
ILD217T
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Peak reverse voltage
Peak pulsed current
Continuous forward current per channel
Power dissipation
P
diss
1 μs, 300 pps
V
R
6
1
30
50
V
A
mA
mW
TEST CONDITION
SYMBOL
VALUE
UNIT
Document Number: 83647
Rev. 1.8, 04-Mar-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
1
ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Dual Channel, SOIC-8 Package
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Power dissipation per channel
COUPLER
Isolation test voltage
Total package dissipation ambient
(2 LEDs and 2 detectors, 2 channels)
Storage temperature
Operating temperature
Soldering time from 260 °C
(1)
TEST CONDITION
SYMBOL
BV
CEO
BV
ECO
P
diss
VALUE
70
7
125
4000
350
- 55 to + 150
- 55 to + 100
10
UNIT
V
V
mW
V
RMS
mW
°C
°C
s
t=1s
V
ISO
P
tot
T
stg
T
amb
T
sld
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices.
ELECTRICAL CHARACTERISTCS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector emitter leakage current
Collector emitter capacitance
COUPLER
Collector emitter saturation voltage
Capacitance (input to output)
Resistance (input to output)
I
F
= 10 mA, I
C
= 2.5 mA
V
CEsat
C
IO
R
IO
0.5
100
0.4
V
pF
G
I
C
= 10 μA
I
E
= 10 μA
V
CE
= 10 V, I
F
= 0 A
V
CE
= 0 V
BV
CEO
BV
ECO
I
CEO
C
CE
70
7
5
10
50
V
V
nA
pF
I
F
= 10 mA
V
R
= 6 V
V
R
= 0 V
V
F
I
R
C
O
1.2
0.1
25
1.55
100
V
μA
pF
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
ILD205T
ILD206T
V
CE
= 5 V, I
F
= 10 mA
DC current transfer ratio
ILD207T
ILD211T
ILD213T
ILD205T
V
CE
= 5 V, I
F
= 1 mA
ILD206T
ILD207T
ILD217T
SYMBOL
CTR
DC
CTR
DC
CTR
DC
CTR
DC
CTR
DC
CTR
DC
CTR
DC
CTR
DC
CTR
DC
MIN.
40
63
100
20
100
13
22
34
100
30
45
70
120
TYP.
MAX.
80
125
200
UNIT
%
%
%
%
%
%
%
%
%
www.vishay.com
2
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83647
Rev. 1.8, 04-Mar-11
ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T
Optocoupler, Phototransistor Output,
Vishay Semiconductors
Dual Channel, SOIC-8 Package
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
TEST CONDITION
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
,
(see figure 3)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k,
(see figure 4)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k,
(see figure 4)
SYMBOL
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
MIN
TYP.
3
3
4.7
0.3
6
5
3
10
MAX
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
I
F
I
F
0
I
F
+5V
0
I
C
= 2 mA; adjusted through
input amplitude
I
C
100 %
90 %
t
p
t
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10804
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
10 %
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
t
100
Ω
Fig. 1 - Test Circuit, Non-Saturated Operation
Fig. 3 - Switching Times
I
F
0
I
F
= 10 mA
+5V
I
C
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10843
Oscilloscope
R
L
≥
1 MΩ
C
L
≤
20 pF
1 kΩ
Fig. 2 - Test Circuit, Saturated Operation
Document Number: 83647
Rev. 1.8, 04-Mar-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
3
ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Dual Channel, SOIC-8 Package
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
V
IOTM
V
IORM
P
SO
I
SI
T
SI
Creepage distance
Clearance distance
Insulation thickness
4
4
0.2
CTI
175
6000
560
350
150
165
TEST CONDITION
SYMBOL
MIN.
TYP.
55/100/21
399
V
V
mW
mA
°C
mm
mm
mm
MAX.
UNIT
Note
• As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1.6
V
F
- Forward Voltage (V)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
T
amb
= 100 °C
T
amb
= - 55 °C
I
CE0
- Leakage Current (nA)
I
F
= 0 mA
1000
T
amb
= 0 °C
V
CE
= 40 V
10
V
CE
= 12 V
V
CE
= 24 V
0.1
T
amb
= 25 °C
T
amb
= 50 °C
T
amb
= 75 °C
1
10
100
0.001
- 60 - 40 - 20
0
20
40
60
80 100
I
F
- Forward Current (mA)
Fig. 4 - Forward Voltage vs. Forward Current
T
amb
- Ambient Temperature (°C)
Fig. 6 - Leakage Current vs. Ambient Temperature
25
30
I
C
- Collector Current (mA)
I
C
- Collector Current (mA)
20
15
I
F
= 30 mA
25
I
F
= 25 mA
20
15
10
5
I
F
= 1 mA
I
F
= 10 mA
I
F
= 20 mA
10
5
0
0
2
4
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 5 mA
I
F
= 2 mA
0
6
8
10
22329
0
0.1
0.2
0.3
0.4
22327
V
CE
- Collector Emitter Voltage (NS) (V)
V
CE
- Collector Emitter Voltage (sat) (V)
Fig. 5 - Collector Current vs. Collector Emitter Voltage (NS)
Fig. 7 - Collector Current vs. Collector Emitter Voltage (sat)
www.vishay.com
4
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83647
Rev. 1.8, 04-Mar-11
ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T
Optocoupler, Phototransistor Output,
Vishay Semiconductors
Dual Channel, SOIC-8 Package
1.4
1.2
I
F
= 5 mA
N
CTR
- Normalized CTR (sat)
1.2
1.0
N
CTR
- Normalized CTR (sat)
V
CE
= 0.4 V
V
CE
= 0.4 V
1.0
0.8
0.6
0.4
0.2
0
T
amb
= 100 °C
T
amb
= 75 °C
T
amb
= 50 °C
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= - 55 °C
I
F
= 10 mA
0.8
0.6
I
F
= 1 mA
0.4
0.2
0
- 60 - 40 - 20
0
20
40
60
80 100
0.1
1
10
100
T
amb
- Ambient Temperature (°C)
Fig. 8 - Normalized CTR (sat) vs. Ambient Temperature
I
F
- Forward Current (mA)
Fig. 11 - Normalized CTR (sat) vs. Forward Current
1.2
1000
N
CTR
- Normalized CTR (NS)
1.0
0.8
I
F
= 5 mA
t
on
, t
off
-
Switching
Time (μs)
I
F
= 10 mA
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V, I
F
= 10 mA
100
t
off
(μs)
0.6
0.4
I
F
= 1 mA
10
t
on
(μs)
1
0.2
0
- 60 - 40 - 20
0.1
0
20
40
60
80 100
22336
0
5
10
15
20
T
amb
- Ambient Temperature (°C)
Fig. 9 - Normalized CTR (NS) vs. Ambient Temperature
R
L
- Load Resistance (kΩ)
Fig. 12 - Switching Time vs. Load Resistance
N
CTR
- Normalized CTR (NS)
V
CE
= 5 V
1.0
T
amb
= 25 °C
Package Power Dissipation (mW)
1.2
400
350
Dual channel
300
250
200
150
100
50
0
- 55
- 30
-5
20
45
70
95
120
Single
channel
0.8
T
amb
= 0 °C
0.6
T = - 55 °C
amb
T
amb
= 50 °C
0.4
T
amb
= 75 °C
0.2
T
amb
= 100 °C
0
0.1
1
10
100
I
F
- Forward Current (mA)
Fig. 10 - Normalized CTR (NS) vs. Forward Current
T
amb
- Ambient Temperature (°C)
Fig. 13 - Power Dissipation vs. Ambient Temperature
Document Number: 83647
Rev. 1.8, 04-Mar-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
