AEC-Q100, 2-channel, 10-MHz, low-noise, RRIO, CMOS operational amplifier for cost-optimized systems 8-SOIC -40 to 125
| 参数名称 | 属性值 |
| Brand Name | Texas Instruments |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 包装说明 | HSOP, SOP8,.25 |
| Reach Compliance Code | compliant |
| Samacsys Description | Operational Amplifiers - Op Amps AEC-Q100, 2-channel, 10-MHz, low-noise, RRIO, CMOS operational amplifier for cost-optimized systems 8-SOIC -40 to 125 |
| 放大器类型 | OPERATIONAL AMPLIFIER |
| 架构 | VOLTAGE-FEEDBACK |
| 最小共模抑制比 | 80 dB |
| 标称共模抑制比 | 103 dB |
| 频率补偿 | YES |
| 最大输入失调电压 | 1600 µV |
| JESD-30 代码 | R-PDSO-G8 |
| JESD-609代码 | e4 |
| 长度 | 4.905 mm |
| 低-偏置 | YES |
| 低-失调 | NO |
| 微功率 | YES |
| 湿度敏感等级 | 2 |
| 功能数量 | 2 |
| 端子数量 | 8 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -40 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | HSOP |
| 封装等效代码 | SOP8,.25 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, HEAT SINK/SLUG |
| 功率 | NO |
| 可编程功率 | NO |
| 筛选级别 | AEC-Q100 |
| 座面最大高度 | 1.75 mm |
| 标称压摆率 | 6.5 V/us |
| 最大压摆率 | 1.5 mA |
| 供电电压上限 | 6 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | AUTOMOTIVE |
| 端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 标称均一增益带宽 | 10000 kHz |
| 最小电压增益 | 158489.319 |
| 宽带 | NO |
| 宽度 | 3.895 mm |
| TLV9062QDRQ1 | PTLV9064QDRQ1 | TLV9064-Q1 | TLV9064QDRQ1 | PTLV9062QDRQ1 | TLV9062-Q1 | |
|---|---|---|---|---|---|---|
| 描述 | AEC-Q100, 2-channel, 10-MHz, low-noise, RRIO, CMOS operational amplifier for cost-optimized systems 8-SOIC -40 to 125 | 4 channel, 10-MHz, low-noise, RRIO, CMOS operational amplifier for cost-sensitive systems 14-SOIC -40 to 125 | 4 channel, 10-MHz, low-noise, RRIO, CMOS operational amplifier for cost-sensitive systems 14-SOIC -40 to 125 | 4 channel, 10-MHz, low-noise, RRIO, CMOS operational amplifier for cost-sensitive systems 14-SOIC -40 to 125 | AEC-Q100, 2-channel, 10-MHz, low-noise, RRIO, CMOS operational amplifier for cost-optimized systems 8-SOIC -40 to 125 | AEC-Q100, 2-channel, 10-MHz, low-noise, RRIO, CMOS operational amplifier for cost-optimized systems 8-SOIC -40 to 125 |
| Iq per channel(Max)(mA) | - | 0.75 | 0.75 | 0.75 | - | 0.538 |
| Features | - | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened | - | Cost Optimized,EMI Hardened |
| Approx. price(US$) | - | 0.40 | 1ku | 0.40 | 1ku | 0.40 | 1ku | - | 0.33 | 1ku |
| GBW(Typ)(MHz) | - | 10 | 10 | 10 | - | 10 |
| Vos (offset voltage @ 25 C)(Max)(mV) | - | 1.6 | 1.6 | 1.6 | - | 1.6 |
| Output current(Typ)(mA) | - | 50 | 50 | 50 | - | 50 |
| Offset drift(Typ)(uV/C) | - | 0.53 | 0.53 | 0.53 | - | 0.53 |
| Package Group | - | SOIC|14 | SOIC|14 | SOIC|14 | - | SOIC|8 |
| Rating | - | Automotive | Automotive | Automotive | - | Automotive |
| Slew rate(Typ)(V/us) | - | 6.5 | 6.5 | 6.5 | - | 6.5 |
| CMRR(Typ)(dB) | - | 103 | 103 | 103 | - | 103 |
| Iq per channel(Typ)(mA) | - | 0.538 | 0.538 | 0.538 | - | 0.75 |
| Vn at 1 kHz(Typ)(nV/rtHz) | - | 16 | 16 | 16 | - | 16 |
| Rail-to-rail | - | In,Out | In,Out | In,Out | - | In,Out |
| Input common mode headroom (to positive supply)(Typ)(V) | - | 0.1 | 0.1 | 0.1 | - | 0.1 |
| Input common mode headroom (to negative supply)(Typ)(V) | - | -0.1 | -0.1 | -0.1 | - | -0.1 |
| Output swing headroom (to positive supply)(Typ)(V) | - | -.02 | -.02 | -.02 | - | -0.02 |
| Architecture | - | CMOS | CMOS | CMOS | - | CMOS |
| Output swing headroom (to negative supply)(Typ)(V) | - | 0.02 | 0.02 | 0.02 | - | 0.02 |
| Number of channels(#) | - | 4 | 4 | 4 | - | 2 |
| Total supply voltage(Min)(+5V=5, +/-5V=10) | - | 1.8 | 1.8 | 1.8 | - | 1.8 |
| Total supply voltage(Max)(+5V=5, +/-5V=10) | - | 5.5 | 5.5 | 5.5 | - | 5.5 |
| CMRR(Min)(dB) | - | 80 | 80 | 80 | - | 80 |
| Operating temperature range(C) | - | -40 to 125 | -40 to 125 | -40 to 125 | - | -40 to 125 |
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