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MICROWAVE CORPORATION
HMC132G7
HMC132P7
GaAS MMIC HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ
F
EBRUARY
2001
Features
BANDWIDTH: DC-6 GHz
HIGH ISOLATION : > 40 dB
NON-REFLECTIVE DESIGN
General Description
The HMC132G7 and HMC132P7 are the
packaged versions of the HMC132 MMIC
SPDT switch. Both use the same 7-pin
ceramic package but with modified lead
configurations. The G7 suffix designates
package leads configured for surface mount
while the P7 suffix designates package leads
configured for microstrip insertion. The de-
vice is a fast, broadband SPDT switch fea-
turing high (> 40 dB) isolation over the entire
band. The switch is non-reflective at both
RF1 and RF2 ports.
7
S
WITCHES
Guaranteed Performance,
With 0/-5V control, 50 Ohm System, -55 to +85 deg C
Parameter
Inser tion Loss
Isolation
Return Loss
Frequency
DC - 3 GHz
DC - 6 GHz
DC - 3 GHz
DC - 6 GHz
DC - 3 GHz
DC - 6 GHz
0.5 - 6 GHz
0.5 - 6 GHz
0.5 - 6 GHz
DC - 6 GHz
3
6
ns
ns
45
35
14
5
+20
+22
+38
Min.
Typ.
1.5
2.2
50
40
18
8
+25
+27
+42
Max.
1.9
2.6
Units
dB
dB
dB
dB
dB
dB
dB m
dB m
dB m
SMT
SPDT
Input Power for 0.1dB Compression
Input Power for 1dB Compression
Input Third Order Intercept
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 12
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MICROWAVE CORPORATION
HMC132G7
HMC132P7
ne
w
!
HMC132G7 / HMC132P7 HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ
F
EBRUARY
2001
Insertion Loss
0
-1
Isolation
0
-10
INSERTION LOSS (dB)
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
-2
-3
-4
-5
0
1
2
3
4
5
6
7
0
1
2
3
4
5
FREQUENCY (GHz)
6
7
FREQUENCY (GHz)
7
Return Loss
0
RETURN LOSS (dB)
-10
-20
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 13
SMT
-30
SPDT
S
WITCHES
'9
9
n
ew
!
MICROWAVE CORPORATION
HMC132G7
HMC132P7
HMC132G7 / HMC132P7 HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ
F
EBRUARY
2001
Schematic
RF COM
Truth Table
Control Input
A
B
Low
H i gh
Signal Path State
RF to RF1
ON
OFF
RF to RF2
OFF
ON
RF1
RF2
H i gh
Low
Do not "HOT" switch power levels > +15 dBm ( V
ctl
= 0/-5Vdc)
A B
(BACKSIDE IS GND)
Control Voltages
State
Low
H i gh
Bias Condition
0 to -0.2V @ 20uA Max.
-5V@200uA Typ to -7V@600uA Max
Absolute Maximum Ratings
Control Voltage Range
Storage Temperature
Operating Temperature
+0.5 to -7.5 Vdc
-65 to +150 deg C
-55 to +125 deg C
7
S
WITCHES
Outline: HMC132G7
Outline: HMC132P7
0.260
0.025
0.130
0.005
+/- 0.001
7 PLCS
7 PLCS
0.320 +/- 0.012
0.260
0.130
0.005
+/- 0.001
7 PLCS
0.050 +/- 0.020
7 PLCS
RFCOM
RFCOM
0.276 +/- 0.012
SPDT
0.215
RF1
0.010
+/- 0.002
7 PLCS
RF2
0.085
CASE BOTTOM
IS GROUND
0.210 +/- 0.020
0.215
0.010
+/- 0.002
7 PLCS
RF1
RF2
0.085
CASE BOTTOM
IS GROUND
GND A
0.062
B
GND A
GND
0.000/0.010
0.045
TYP
0.135 TYP
0.062
B
GND
0.045
TYP
0.135 TYP
TYP 7 PL
0.065 MAX
SMT
0.065 MAX
1)
2.
3.
4.
MATERIAL:
A) PACKAGE - BODY : WHITE ALUMINA (92%)
B) LEADS - PACKAGE COVER: KOVAR (tm)
C) CONDUCTOR TRACES - THICKFILM TUNGSTEN
PLATING (LEADS): ELECTROLYTIC GOLD 50 MICROINCHES
MINIMUM OVER ELECTROLYTIC NICKEL 50 MICROINCHES MINIMUM.
ALL UNLABELED PINS ARE GROUND.
ALL DIMENSIONS ARE IN INCHES
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 14
'9
9
MICROWAVE CORPORATION
HMC132G7
HMC132P7
F
EBRUARY
2001
ne
w
!
HMC132G7 / HMC132P7 HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ
Suggested Driver Circuit for HMC132G7/P7
Vz=5.1V
Izt=50uA
COMPENSATED
DEVICES
CD4689
TTL
OR
CMOS
VCC
GND
VCC
GND
A
GaAs SWITCH
CONTROL
B
10K
74HCT04 (TTL)
74HC04
(CMOS)
-5 VDC
7
Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
7 - 15
SMT
SPDT
S
WITCHES
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