35mW - 1200V SiC Cascode | UF3C120040K3S
Datasheet
Description
United Silicon Carbide's cascode products co-package its high-
performance G3 SiC JFETs with a cascode optimized MOSFET to produce
the only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are
excellent for switching inductive loads when used with recommended RC-
snubbers, and any application requiring standard gate drive.
CASE
CASE
D (2)
G (1)
1 2 3
Part Number
UF3C120040K3S
S (3)
Package
TO-247-3L
Marking
UF3C120040K3S
Features
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Typical on-resistance R
DS(on),typ
of 35mW
Maximum operating temperature of 175°C
Excellent reverse recovery
Low gate charge
Low intrinsic capacitance
ESD protected, HBM class 2
Very low switching losses (required RC-snubber loss negligible
under typical operating conditions)
Typical Applications
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EV charging
PV inverters
Switch mode power supplies
Power factor correction modules
Motor drives
Induction heating
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
1
Pulsed drain current
2
Single pulsed avalanche energy
3
Power dissipation
Maximum junction temperature
Operating and storage temperature
Max. lead temperature for soldering,
1/8” from case for 5 seconds
1
2
3
Limited by T
J,max
Pulse width t
p
limited by T
J,max
Starting T
J
= 25°C
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
tot
T
J,max
T
J
, T
STG
T
L
DC
T
C
=25°C
T
C
=100°C
T
C
=25°C
L=15mH, I
AS
=4.2A
T
C
=25°C
Test Conditions
Value
1200
-25 to +25
65
47
175
132.3
429
175
-55 to 175
250
Units
V
V
A
A
A
mJ
W
°C
°C
°C
Rev. B, December 2018
1
For more information go to www.unitedsic.com.
35mW - 1200V SiC Cascode | UF3C120040K3S
Datasheet
Electrical Characteristics
(T
J
= +25°C unless otherwise specified)
Typical Performance - Static
Parameter
Drain-source breakdown voltage
Symbol
BV
DS
Test Conditions
V
GS
=0V, I
D
=1mA
V
DS
=1200V,
V
GS
=0V, T
J
=25°C
V
DS
=1200V,
V
GS
=0V, T
J
=175°C
V
DS
=0V, T
j
=25°C,
V
GS
=-20V / +20V
V
GS
=12V, I
D
=40A,
T
J
=25°C
V
GS
=12V, I
D
=40A,
T
J
=175°C
V
DS
=5V, I
D
=10mA
f=1MHz, open drain
4
Value
Min
1200
Typ
Max
Units
V
8
35
6
35
73
5
4.5
6
V
W
20
45
mW
mA
150
mA
Total drain leakage current
I
DSS
Total gate leakage current
I
GSS
Drain-source on-resistance
R
DS(on)
Gate threshold voltage
Gate resistance
V
G(th)
R
G
Typical Performance - Reverse Diode
Parameter
Diode continuous forward current
1
Diode pulse current
2
Symbol
I
S
I
S,pulse
Test Conditions
T
C
=25°C
T
C
=25°C
V
GS
=0V, I
F
=20A,
T
J
=25°C
V
GS
=0V, I
F
=20A,
T
J
=175°C
V
R
=800V, I
F
=40A,
V
GS
=-5V,R
G_EXT
=10W
di/dt=2400A/ms,
T
J
=25°C
V
R
=800V, I
F
=40A,
V
GS
=-5V,R
G_EXT
=10W
di/dt=2400A/ms,
T
J
=150°C
1.5
1.95
358
25
259
22
nC
ns
nC
ns
Value
Min
Typ
Max
65
175
2
V
Units
A
A
Forward voltage
V
FSD
Reverse recovery charge
Reverse recovery time
Reverse recovery charge
Reverse recovery time
Q
rr
t
rr
Q
rr
t
rr
Rev. B, December 2018
2
For more information go to www.unitedsic.com.
35mW - 1200V SiC Cascode | UF3C120040K3S
Datasheet
Typical Performance - Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy related
Effective output capacitance, time related
C
OSS
stored energy
Total gate charge
Gate-drain charge
Gate-source charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy including R
S
energy
4
Turn-off energy including R
S
energy
4
Total switching energy including R
S
energy
4
Snubber R
S
energy during turn-on
Snubber R
S
energy during turn-off
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy including R
S
energy
4
Turn-off energy including RS energy
4
Total switching energy including RS energy
4
Snubber R
S
energy during turn-on
Snubber R
S
energy during turn-off
4
symbol
C
iss
C
oss
C
rss
C
oss(er)
C
oss(tr)
E
oss
Q
G
Q
GD
Q
GS
t
d(on)
t
r
t
d(off)
t
f
E
ON
E
OFF
E
TOTAL
E
RS_ON
E
RS_OFF
t
d(on)
t
r
t
d(off)
t
f
E
ON
E
OFF
E
TOTAL
E
RS_ON
E
RS_OFF
Test Conditions
V
DS
=100V,
V
GS
=0V,
f=100kHz
V
DS
=0V to 800V,
V
GS
=0V
V
DS
=0V to 800V,
V
GS
=0V
V
DS
=800V, V
GS
=0V
V
DS
=800V, I
D
=40A,
V
GS
=-5V to 15V
V
DS
=800V, I
D
=40A, Gate
Driver=-5V to +15V,
Turn-on R
G,EXT
=1W,
Turn-off R
G,EXT
=22W
Inductive Load,
FWD: same device with
V
GS
= -5V and R
G
= 22W
RC snubber: R
S
=5W
and C
S
=220pF
T
J
=25°C
V
DS
=800V, I
D
=40A, Gate
Driver=-5V to +15V,
Turn-on R
G,EXT
=1W,
Turn-off R
G,EXT
=22W
Inductive Load,
FWD: same device with
V
GS
= -5V and R
G
= 22W
RC snubber: R
S
=5W
and C
S
=220pF
T
J
=150°C
Value
Min
Typ
1500
210
1.7
112
280
35.6
51
11
19
38
26
61
20
1222
227
1449
7.3
9.5
37
25
63
21
1183
261
1444
7.1
9.5
mJ
mJ
Max
Units
pF
pF
pF
mJ
nC
ns
ns
The switching performance are evaluated with a RC snubber circuit as shown in Figure 24.
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
symbol
R
qJC
Test Conditions
Value
Min
Typ
0.27
Max
0.35
Units
°C/W
Rev. B, December 2018
3
For more information go to www.unitedsic.com.
35mW - 1200V SiC Cascode | UF3C120040K3S
Datasheet
Typical Performance Diagrams
120
100
120
100
Drain Current, I
D
(A)
80
Vgs = 15V
60
Vgs = 10V
Vgs = 8V
Vgs = 7.5V
Vgs = 7V
20
0
0
1
2
3
4
5
6
7
8
9
Drain-Source Voltage, V
DS
(V)
10
Vgs = 6.5V
Drain Current, I
D
(A)
80
60
40
40
20
0
0
1
2
Vgs = 15V
Vgs = 10V
Vgs = 8V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
3
4
5
6
7
8
9
Drain-Source Voltage, V
DS
(V)
10
Figure 1 Typical output characteristics
at T
J
= - 55°C, tp < 250
m
s
120
100
Figure 2 Typical output characteristics
at T
J
= 25°C, tp < 250
m
s
2.5
On Resistance, R
DS_ON
(P.U.)
10
Drain Current, I
D
(A)
80
60
Vgs = 15V
Vgs = 8V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
2.0
1.5
1.0
0.5
0.0
40
20
0
0
1
2
3 4 5 6 7 8 9
Drain-Source Voltage, V
DS
(V)
-75 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, T
J
(°C)
Figure 3 Typical output characteristics
at T
J
= 175°C, tp < 250
m
s
Figure 4 Normalized on-resistance vs.
temperature at V
GS
= 12V and
I
D
= 40A
Rev. B, December 2018
4
For more information go to www.unitedsic.com.
35mW - 1200V SiC Cascode | UF3C120040K3S
Datasheet
150
120
Tj = 175°C
Tj = 25°C
Tj = - 55°C
Tj = -55°C
100
Tj = 25°C
Tj = 175°C
On-Resistance, R
DS(on)
(mW)
125
100
Drain Current, I
D
(A)
100
120
80
75
50
25
0
0
20
40
60
80
Drain Current, I
D
(A)
60
40
20
0
0
1
2 3 4 5 6 7 8 9
Gate-Source Voltage, V
GS
(V)
10
Figure 5 Typical drain-source
on-resistance at V
GS
= 12V
Figure 6 Typical transfer characteristics
at V
DS
= 5V
6
20
Gate-Source Voltage, V
GS
(V)
-50
0
50
100
150
Junction Temperature, T
J
(°C)
200
Threshold Voltage, V
th
(V)
5
4
3
2
1
0
-100
15
10
5
0
-5
0
10
20
30
40
Gate Charge, Q
G
(nC)
50
60
Figure 7 Threshold voltage vs. T
J
at V
DS
= 5V and I
D
= 10mA
Figure 8 Typical gate charge
at V
DS
= 800V and I
D
= 40A
Rev. B, December 2018
5
For more information go to www.unitedsic.com.
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