MJD2955 (PNP),
MJD3055 (NPN)
Complementary Power
Transistors
DPAK for Surface Mount Applications
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Designed for general purpose amplifier and low speed switching
applications.
Features
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to MJE2955 and MJE3055
High Current Gain−Bandwidth Product
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS, 20 WATTS
COMPLEMENTARY
COLLECTOR
2, 4
COLLECTOR
2, 4
1
BASE
3
EMITTER
1
BASE
3
EMITTER
4
4
1 2
1
3
2
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
{
Max
60
70
5
10
6
20
0.16
1.75
0.014
T
J
, T
stg
HBM
MM
−55 to +150
3B
C
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
W
W/°C
°C
V
V
3
DPAK
CASE 369C
STYLE 1
IPAK
CASE 369D
STYLE 1
P
D
MARKING DIAGRAMS
AYWW
J
xx55G
DPAK
A
Y
WW
Jxx55
G
AYWW
J
xx55G
IPAK
= Assembly Location
= Year
= Work Week
= Device Code
x = 29 or 30
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must
be observed.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
1
August, 2013 − Rev. 13
Publication Order Number:
MJD2955/D
MJD2955 (PNP), MJD3055 (NPN)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
R
qJC
R
qJA
Max
6.25
71.4
Unit
°C/W
°C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 30 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 70 Vdc, V
EB(off)
= 1.5 Vdc)
(V
CE
= 70 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150_C)
Collector Cutoff Current
(V
CB
= 70 Vdc, I
E
= 0)
(V
CB
= 70 Vdc, I
E
= 0, T
C
= 150_C)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 4 Adc, V
CE
= 4 Vdc)
(I
C
= 10 Adc, V
CE
= 4 Vdc)
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 4 Adc, I
B
= 0.4 Adc)
(I
C
= 10 Adc, I
B
= 3.3 Adc)
Base−Emitter On Voltage (Note 3)
(I
C
= 4 Adc, V
CE
= 4 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f = 500 kHz)
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
f
T
2
−
MHz
h
FE
20
5
V
CE(sat)
−
−
V
BE(on)
−
1.8
1.1
8
Vdc
100
−
Vdc
−
V
CEO(sus)
60
I
CEO
−
I
CEX
−
−
I
CBO
−
−
I
EBO
−
0.5
0.02
2
mAdc
0.02
2
mAdc
50
mAdc
−
mAdc
Vdc
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2
MJD2955 (PNP), MJD3055 (NPN)
TYPICAL CHARACTERISTICS
T
A
T
C
2.5 25
PD, POWER DISSIPATION (WATTS)
2 20
T
C
T
A
SURFACE
MOUNT
1.5 15
1 10
0.5
5
0
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
500
300
200
hFE , DC CURRENT GAIN
100
50
30
20
10
5
0.01
V
CE
= 2 V
T
J
= 150°C
t, TIME (
μ
s)
25°C
- 55°C
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
t
d
@ V
BE(off)
≈
5 V
t
r
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.06 0.1
0.2
0.4
0.6
1
2
4
6
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
Figure 3. Turn−On Time
1.4
1.2
V, VOLTAGE (VOLTS)
1
0.8
0.6
0.4
0.2
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3
0.5
1
2
3
5
10
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2 V
t, TIME (
μ
s)
T
J
= 25°C
5
3
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06 0.1
t
s
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
t
f
0.2
0.4
0.6
1
2
4
6
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages, MJD3055
Figure 5. Turn−Off Time
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3
MJD2955 (PNP), MJD3055 (NPN)
2
T
J
= 25°C
25
ms
+11 V
1.2
V
BE(sat)
@ I
C
/I
B
= 10
0.8
V
BE
@ V
CE
= 3 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
0.2 0.3
0.5
1
2 3
I
C
, COLLECTOR CURRENT (AMP)
5
10
0
-9 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
51
-4 V
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
D
1
R
B
R
C
SCOPE
V
CC
+ 30 V
1.6
V, VOLTAGE (VOLTS)
Figure 6. “On” Voltages, MJD2955
Figure 7. Switching Time Test Circuit
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
R
qJC(t)
= r(t) R
qJC
R
qJC
= 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
0.1
0.07
0.05
0.03
0.02
0.05
0.02
0.01
SINGLE PULSE
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 8. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5
3
2
1
0.5
0.3
0.1
T
J
= 150°C
100
ms
1 ms
5 ms
dc
500
ms
Forward Bias Safe Operating Area Information
0.05
0.03
0.02
0.01
0.6
1
WIRE BOND LIMIT
THERMAL LIMIT T
C
= 25°C (D = 0.1)
SECOND BREAKDOWN LIMIT
2
20
4
6
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
60
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
≤
150_C. T
J(pk)
may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 9. Maximum Forward Bias
Safe Operating Area
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4
MJD2955 (PNP), MJD3055 (NPN)
ORDERING INFORMATION
Device
MJD2955G
MJD2955−1G
MJD2955T4G
NJVMJD2955T4G*
MJD3055G
MJD3055T4G
NJVMJD3055T4G*
Package Type
DPAK
(Pb−Free)
IPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Package
369C
369D
369C
369C
369C
369C
369C
Shipping
†
75 Units / Rail
75 Units / Rail
2,500 / Tape & Reel
2,500 / Tape & Reel
75 Units / Rail
2,500 / Tape & Reel
2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
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