TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/301
DEVICES
LEVELS
2N918
2N918UB
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
(1)
Operating & Storage Junction Temperature Range
Note:
1) Derate linearly 1.14mW/°C above T
A
> 25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 3mAdc
Collector-Base Cutoff Current
V
CB
= 30Vdc
V
CB
= 25Vdc
V
CB
= 25Vdc; T
A
= +150°C
Emitter-Base Cutoff Current
V
EB
= 3.0Vdc
V
EB
= 2.5Vdc
Forward-Current Transfer Ratio
I
C
= 0.5mAdc, V
CE
= 10Vdc
I
C
= 3.0mAdc, V
CE
= 1.0Vdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 3.0mAdc, V
CE
= 1.0Vdc; T
A
= -55°C
Collector-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
Base-Emitter Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
V
CE(sat)
V
BE(sat)
h
FE
V
(BR)CEO
15
1.0
10
1.0
10
10
10
20
20
10
0.4
1.0
Vdc
Vdc
200
Vdc
µAdc
ηAdc
µAdc
µAdc
ηAdc
Symbol
Min.
Max.
Unit
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
& T
stg
Value
15
30
3.0
50
200
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
°C
TO-72
2N918
I
CBO
3 PIN
2N918UB
I
EBO
T4-LDS-0010 Rev. 3 (101342)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small-Signal Short-Circuit - Forward Current Transfer Ratio
I
C
= 4mAdc, V
CE
= 10Vdc, f = 100MHz
Output Capacitance
V
CB
= 0Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
Noise Figure (1)
V
CE
= 6V, I
C
= 1.0mA, f = 60MHz
g
s
= 2.5mmho
Small-Signal Power Gain (1)
V
CB
= 12V, I
C
= 6.0mA, f = 200MHz
Collector-Base Time Constant (1)
V
CB
= 10V, I
E
= -4.0mA, f = 79.8MHz
Oscillator Power Output (1)
V
CB
= 1.5V, I
C
= 8.0mA, f
≥
500MHz
Collector Efficiency
V
CB
= 15V, I
C
= 8.0mA, f > 500MHz
NOTES:
(1) For more detail see MIL-PRF-19500/301
Symbol
|h
fe
|
C
obo1
C
obo2
C
ibo
Min.
6.0
Max.
18
3.0
1.7
2.0
Unit
pF
pF
NF
6.0
dB
G
pe
R
b’CC
P
o
n
15
25
30
25
dB
ps
mW
%
T4-LDS-0010 Rev. 3 (101342)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
.028
.036
.250
.100
.040
.048
.046
.007
45° TP
.71
.91
Inches
Min
Max
.178
.195
.170
.209
.016
.500
.016
.210
.230
.021
.750
.019
.050
6.35
2.54
1.02
1.22
1.17
.18
5
Millimeters
Min
Max
4.52
4.95
4.32
5.31
.406
12.70
.406
5.33
5.84
.533
19.05
.483
1 .27
5
7,8
7,8
7,8
Note
5
.100 TP
2.54 TP
NOTES:
1. Dimension are in inches.
2.
Millimeters are given for general information only.
3.
Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).
4.
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
5.
6.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.025 -0.00 mm) below seating plane shall be within .007 inch
(0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
7.
uncontrolled in L1 and beyond LL minimum.
8.
All four leads.
Dimension r (radius) applies to both inside corners of tab.
9.
10.
In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
11.
Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).
FIGURE 1.
Physical dimensions for 2N918 (TO-72).
T4-LDS-0010 Rev. 3 (101342)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
BH
BL
BW
CL
CW
LL
1
LL
2
Dimensions
Millimeters
Inches
Min
Max
Min
Max
.046
.056
1.17
1.42
.115
.085
.128
.108
.128
.108
.022
.017
.038
.035
0.56
0.4.
2.92
2.16
3.25
2.74
3.25
2.74
0.97
0.89
Dimensions
Note
Symbol
LS
1
LS
2
LW
r
r1
r2
Inches
Min
Max
.036
.040
.071
.016
.079
.024
.008
.012
.022
Millimeters
Min
Max
0.91
1.02
1.80
0.41
2.01
0.61
.203
.305
.559
Note
NOTES:
1.
2.
3.
4.
5.
6.
Dimensions are in inches.
Millimeters are given for general information only.
Hatched areas on package denote metallized areas.
Lid material: Kovar.
Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2.
Physical dimensions for 2N918UB, surface mount.
T4-LDS-0010 Rev. 3 (101342)
Page 4 of 4
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Microsemi
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Jan2N930/TR JANTX2N918UB/TR JANTX2N918/TR JANTXV2N918/TR 2N918/TR Jantx2N930/TR 2n930/TR
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