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JAN1N3035CUR-1/TR

产品描述稳压二极管
产品类别半导体    分立半导体    二极管与整流器    稳压二极管   
文件大小251KB,共6页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

JAN1N3035CUR-1/TR概述

稳压二极管

JAN1N3035CUR-1/TR规格参数

参数名称属性值
厂商名称Microsemi
产品种类稳压二极管
RoHSN
Vz - 齐纳电压43 V
安装风格SMD/SMT
封装 / 箱体DO-213AB-2
Pd-功率耗散1 W
电压容差2 %
电压温度系数0.102 %/C
齐纳电流21 mA
Zz - 齐纳阻抗70 Ohms
最小工作温度- 55 C
最大工作温度+ 175 C
配置Single
测试电流6 mA
封装Reel
直径2.67 mm
长度5.21 mm
If - 正向电流200 mA
Ir - 反向电流 10 uA
工厂包装数量100
Vf - 正向电压1.2 V

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1N3016BUR-1 – 1N3045BUR-1
Available on
commercial
versions
1 Watt Surface Mount
Zener Diodes
Qualified per MIL-PRF-19500/115
DESCRIPTION
Qualified Levels:
JAN, JANTX, and
JANTXV
This surface mountable Zener diode series is similar to the 1N3016B-1 through 1N3045B-1
JEDEC registration in the DO-13 package except that it meets the surface mount DO-213AB
outline. It is an ideal selection for applications of high density and low parasitic requirements.
Due to its glass hermetic seal qualities and metallurgically enhanced internal construction, it is
also well suited for high-reliability applications where it is available in JAN, JANTX, and
JANTXV military qualifications. Lower voltages are also available in the 1N3821AUR-1
through 1N3828AUR-1 series (3.3 V to 7.5 V) in the same package (see separate data sheet).
Important:
For the latest information, visit our website
http://www.microsemi.com.
DO-213AB (MELF,
LL41) Package
FEATURES
Leadless surface mount equivalents to the JEDEC registered 1N3016 through 1N3045 number
series.
Zener voltage range: 6.8 volts to 110 volts.
Hermetically sealed, double plug glass construction.
Metallurgically bonded.
Voltage tolerances of 5%, 2%, and 1% available.
JAN, JANTX, and JANTXV qualifications also available per MIL-PRF-19500/115.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
Also available in:
DO-41 package
(glass axial-leaded)
1N3016B-1 – 1N3045B-1
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current and temperature range.
Wide selection from 6.8 to 110 V.
Low reverse (leakage) currents.
Leadless package for surface mounting.
Ideal for high-density situations.
Metallurgically enhanced internal contact design for greater reliability and lower thermal resistance.
Non-sensitive to ESD.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-End Cap
(1)
DC Power Dissipation
Forward Voltage @ 200 mA
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJEC
P
D
V
F
T
SP
Value
-55 to +175
50
1.0
1.2
260
Unit
ºC
ºC/W
W
V
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. Derate linearly starting at T
EC
125 ºC to zero at 175 ºC (see
Figure1).
T4-LDS-0285-1, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 1 of 5
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