MRF1000MB
Class A, Class AB Microwave Power Silicon NPN Transistor
0.7 W, 960–1215 MHz, 18V
Features
Rev. V1
Guaranteed performance @ 1090 MHz, 18 Vdc — Class A
Output power: 0.2W
Minimum gain: 10dB
100% tested for load mismatch at all phase angles with 10:1
VSWR
Industry standard package
Nitride passivated
Gold metallized, emitter ballasted for long life and resistance to
metal migration
Internal input matching for broadband operation
Product Image
CASE 332A–03, STYLE 2
Description and Applications
Designed for Class A and AB common emitter amplifier applications
in the low–power stages of IFF, DME, TACAN, radar transmitters, and
CW systems.
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M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MRF1000MB
Class A, Class AB Microwave Power Silicon NPN Transistor
0.7 W, 960–1215 MHz, 18V
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
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in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
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5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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