MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA05H9595M
BLOCK DIAGRAM
RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp.
DESCRIPTION
The RA05H9595M is a 5-watt RF MOSFET Amplifier Module
that operate in the 952- to 954-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage
increases. With a gate voltage around 3.5V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 3.8V (typical) and 4V
(maximum). At V
GG
=5V, the typical gate current is 1 mA.
2
3
1
4
5
1
2
3
4
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=14V, V
GG
=0V)
• P
out
>5W, I
T
<1.4A @ V
DD
=14V, V
GG
=5V, P
in
=1mW
• I
T
<1.4A @ V
DD
=14V, P
out
=3W(V
GG
control), P
in
=1mW
•Frequency Range: 952-954MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 60.5 x 14 x 6.4 mm
5
PACKAGE CODE: H11S
RoHS COMPLIANCE
• RA05H9595M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA05H9595M-101
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA05H9595M
MITSUBISHI ELECTRIC
1/7
27 Feb 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA05H9595M
AXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<14V, P
in
=0mW
f=952-954MHz, V
GG
<5V
Z
G
=Z
L
=50Ω
ditto
RATING
17
6
4
7
-30 to +70
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
I
T
R.L.
2f
o
3f
o
—
—
Frequency Range
Output Power
Total Current
Return Loss
2
3
nd
nd
CONDITIONS
V
DD
=14V, V
GG
=5V, P
in
=1mW
V
DD
=14V, P
out
=3W(V
GG
control)
P
in
=1mW,f=953MHz,Zg=Zl=50 ohm
MIN
952
5
TYP
MAX
954
1.4
-6.0
-25
-30
UNIT
MHz
W
A
dB
dBc
dBc
—
—
Harmonic
Harmonic
Stability
Load VSWR Tolerance
V
DD
=10.0-15.2V, P
in
=0.5-2mW,P
out
<5W (V
GG
control),
No parasitic oscillation
Load VSWR=3:1, f=952-954MHz
V
DD
=15.2V, P
in
=1mW, P
out
=5W (V
GG
control),
No degradation or destroy
Load VSWR=20:1, f=952-954MHz
All parameters, conditions, ratings, and limits are subject to change without notice.
RA05H9595M
MITSUBISHI ELECTRIC
2/7
12 Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA05H9595M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
rd
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
30.0
OUTPUT POWER P
out
(W)
2
nd
, 3 HARMONICS versus FREQUENCY
70
TOTAL EFFICIENCY
η
T
(%)
-20
-30
-40
-50
-60
-70
920
3
rd
V
DD
=14V
Vgg=5V
P
in
=1m W
2
nd
25.0
INPUT VSWR
ρ
in
(-)
20.0
15.0
10.0
5.0
0.0
920
η
T
50
30
ρ
in
10
930
940
950
960
FREQUENCY f(MHz)
970
980
HARMONICS (dBc)
V
DD
=14V
Vgg=5V
P
in
=1m W
P
out
930
940
950
960
FREQUENCY f(MHz)
970
980
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
OUTPUT POWER P
out
(dBm)
60
POWER GAIN Gp(dB)
50
40
30
20
10
0
-10
-5
0
5
10
INPUT POWER P
in
(dBm)
I
DD
f=953MHz,
V
DD
=14V,
V
GG
=5V
Gp
P
out
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
7
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
D
(A)
D
6
5
4
3
2
1
0
30
25
20
15
I
DD
f=953MHz,
V
GG
=5V,
P
in
=1m W
6
5
4
3
P
out
10
5
0
2
4
2
1
0
6
8
10
DRAIN VOLTAGE V
DD
(V)
12
14
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
f=953MHz,
V
DD
=14V,
P
in
=1m W
6
5
4
3
2
1
0
DRAIN CURRENT I
D
(A)
D
P
out
RA05H9595M
MITSUBISHI ELECTRIC
3/7
12 Mar 2007
DRAIN CURRENT I
D
(A)
D
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA05H9595M
OUTLINE DRAWING
(mm)
60.5±1
57.5±0.5
50.4±1
2-R1.6±0.2
14±0.5
1
2
3
4
5
6±1
8.3±1
21.3±1
0.45
43.3±1
51.3±1
3.3 +0.8/-0.4
Area [A]
Expansion figure of area [A]
0.09±0.02
(49.5)
0.09±0.02
2.3±0.3
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
RA05H9595M
MITSUBISHI ELECTRIC
4/7
(6.4)
11±0.5
12 Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA05H9595M
EQUIVALENT CIRCUIT
2
3
1
4
5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
TEST BLOCK DIAGRAM
Power
Meter
1
2
DUT
3
4
5
Spectrum
Analyzer
Signal
Generator
Attenuator
Pre-
amplifier
Attenuator
Directional
Coupler
Z
G
=50Ω
Z
L
=50Ω
Directional
Coupler
Attenuator
Power
Meter
C1
C2
-
+
DC Power
Supply V
GG
+
-
DC Power
Supply V
DD
C1, C2: 4700pF, 22uF in parallel
RA05H9595M
MITSUBISHI ELECTRIC
5/7
12 Mar 2007
嵌入式系统
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