PTFB091802FC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 920 – 960 MHz
Description
The PTFB091802FC LDMOS FET is designed for use in power
amplifier applications in the 920 MHz to 960 MHz frequency band.
Features include high gain and a thermally-enhanced package with
earless flange. Manufactured with Wolfspeed's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFB091802FC
Package H-37248-4
Features
V
DD
= 28 V, I
DQ
= 1400 mA, ƒ = 960 MHz
3GPP WCDMA signal,
PAR = 10.0 dB, 3.84 MHz BW
24
60
Gain
Single-carrier WCDMA Drive-up
•
Broadband internal input and output matching
•
Dual path design (2 X 90 W)
•
Typical CW performance at 960 MHz, 28 V
- Ouput power @ P
1dB
= 206 W
- Efficiency = 56%
- Gain = 18 dB
Peak/Average Ratio, Gain (dB)
20
16
12
8
4
0
ptfb091802fc_g1
40
Efficiency
Efficiency (%)
20
0
•
Capable of handling 10:1 VSWR @ 28 V, 180 W
(CW) output power
•
Integrated ESD protection
•
Low thermal resistance
•
Pb-free and RoHS-compliant
PAR @ 0.01% CCDF
-20
-40
-60
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Wolfspeed production test fixture)
V
DD
= 28 V, I
DQ
= 1400 mA, P
OUT
= 55 W avg, ƒ
1
=920 MHz, ƒ
2
= 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjancent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
18
32
—
Typ
19.5
34
–35
Max
—
—
–33
Unit
dB
%
dBc
h
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFB091802FC
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
2
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
65
—
—
—
—
2.5
Typ
—
—
—
—
0.15
3.9
Max
—
1
10
1
—
4.5
Unit
V
µA
µA
µA
W
V
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1400 mA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 190 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–6 to +10
200
–40 to +150
0.38
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB091802FC V1 R0
PTFB091802FC V1 R250
Order Code
PTFB091802FC-V1-R0
PTFB091802FC-V1-R250
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 03, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFB091802FC
Typical Performance
(data taken in a production test fixture)
Single-carrier WCDMA Drive-up
3
V
DD
= 28 V, I
DQ
= 1400 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
-10
ACPU
ACPL
Efficiecy
V
DD
= 28 V, I
DQ
= 1400 mA, ƒ = 920-960
MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
60
Single-carrier WCDMA 3GPP Drive-up
-20
ACP Up & Low (dBc)
ACP Up & Low (dBc)
-20
-30
-40
-50
-60
-70
50
40
30
20
10
ptfb091802fc_g2
-25
-30
-35
-40
-45
-50
-55
25
30
35
40
45
50
960MHz ACPU
960MHz ACPL
940MHz ACPU
940MHz ACPL
920MHz ACPU
920MHz ACPL
ptfb091802fc_g3
25
30
35
40
45
50
55
0
Efficiency(%)
55
Average Output Power (dBm)
Average Output Power (dBm)
21
20
19
960MHz Gain
940MHz Gain
920MHz Gain
960MHz Eff
940MHz Eff
920MHz Eff
V
DD
= 28 V, I
DQ
= 1400mA
CW Performance
I
DQ
= 1400 mA, ƒ = 960 MHz
70
60
CW Performance
at various V
DD
24V Gain
28V Gain
32V Gain
24V Eff
28V Eff
21
20
70
60
Efficiency (%)
Gain (dB)
Gain (dB)
18
17
16
15
14
29
33
37
41
45
49
53
ptfb091802fc_g4
40
30
20
10
57
0
18
17
16
15
14
27
Gain
40
30
20
Efficiency
ptfb091802fc_g5
10
51
55
0
31
35
39
43
47
Output Power (dBm)
Output Power (dBm)
Rev. 03, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
50
19
50
PTFB091802FC
Typical Performance
(cont.)
CW Performance Small Signal
Gain & Input Return Loss
V
DD
= 28 V, I
DQ
= 1400 mA
4
20
0
18
Gain
-5
16
IRL
-10
14
-15
12
750
800
850
900
950
-20
1000 1050 1100
ptfb091802fc_g6
Frequency (MHz)
Load Pull Performance
Load Pull Performance
– Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, I
DQ
= 1400 mA
P
1dB
Max Output Power
Freq
[MHz]
920
942
960
Zs
[
W]
3.48 – j4.93
4.17 – j5.32
4.61 – j5.47
Zl
[
W
]
1.95 – j1.75
1.93 – j1.59
1.86 – j1.64
Gain
[dB]
17.2
18.3
18.3
P
OUT
[dBm]
51.1
50.4
50.4
P
OUT
[W]
127
110
109
[%]
55.1
56.0
56.2
Input Return Loss (dB)
Gain (dB)
Max Drain Efficiency
h
D
Zl
[
W
]
4.47 – j0.46
4.77 + j0.06
4.23 – j0.33
Gain
[dB]
20.2
20.8
20.6
P
OUT
[dBm]
48.9
47.8
48.2
P
OUT
[W]
77
60
65
[%]
71.0
66.4
66.9
h
D
Rev. 03, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFB091802FC
Reference Circuit , 920 – 960 MHz
5
RO4350, .020
(62)
V
DD
R801
C804
R802
RO4350, .020
(62)
C801 C802
C805
R803
C101 C106 C105 R102
R101
C107
C104 C110
R103
C109
R805
S3
C803
S2
R804
+
S1
C203
C214
V
DD
C202 C206 C205 C216
C215
C212
C211
C201 C208 C207 C209
RF_IN
C102
C103
RF_OUT
C204
C108
C213
C210
C210
PTB091802FC_IN_01
PTB091802FC_OUT_01
p t f b 0 9 1 8 0 2 f c _ C D _ 0 3 - 2 6 - 2 0 1 5
Reference circuit assembly diagram (not to scale)
Rev. 03, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
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