NVD5C454NL
Power MOSFET
Features
40 V, 3.9 mW, 88 A, Single N−Channel
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
40 V
R
DS(on)
3.9 mW @ 10 V
5.7 mW @ 4.5 V
D
I
D
88 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
qJC
(Notes 1 & 3)
Power Dissipation R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2 & 3)
Power Dissipation R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
"20
84
60
56
28
20
14
3.1
1.5
463
−55
to
175
46
205
260
A
°C
A
mJ
°C
W
A
W
Unit
V
V
A
G
S
N−CHANNEL MOSFET
4
1 2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L(pk)
= 8.3 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
AYWW
5C
454NLG
2
1 Drain 3
Gate Source
A
= Assembly Location
Y
= Year
WW
= Work Week
5C454NL = Device Code
G
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain) (Note 1)
Junction−to−Ambient
−
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
2.7
48.4
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2017
December, 2017
−
Rev. 0
1
Publication Order Number:
NVD5C454NL/D
NVD5C454NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V
SD
t
RR
ta
tb
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 40 A
V
GS
= 0 V,
I
S
= 40 A
T
J
= 25°C
T
J
= 125°C
0.88
0.78
43
21
21
30
nC
ns
1.2
V
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 40 A, R
G
= 2.5
W
10
38
33
7
ns
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 40 A
V
GS
= 4.5 V, I
D
= 40 A
V
GS
= 10 V, I
D
= 40 A
V
DS
= 3 V, I
D
= 40 A
V
GS
= V
DS
, I
D
= 70
mA
1.2
5.2
4.5
3.3
106
2600
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
V
GS
= 4.5 V, V
DS
= 32 V,
I
D
= 40 A
1000
43
21
43
4.5
8.4
6.9
3.3
V
nC
nC
5.7
3.9
2.2
V
mV/°C
mW
mW
S
pF
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
11
10
250
100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
= 20 V
CHARGES, CAPACITANCES AND GATE RESISTANCES
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVD5C454NL
TYPICAL CHARACTERISTICS
V
GS
= 4.2 V
−
10 V
4V
3.6 V
3.4 V
3.2 V
3V
2.8 V
2.6 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
, DRAIN CURRENT (A)
120
100
80
60
40
20
0
120
V
DS
= 3 V
100
80
60
40
20
0
T
J
= 125°C
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
T
J
=
−55°C
3
4
5
6
0
1
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
6.5
5.5
4.5
3.5
2.5
1.5
T
J
= 25°C
I
D
= 40 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
6.5
5.5
4.5
3.5
2.5
1.5 5
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
V
GS
= 10 V
I
D
= 40 A
I
DSS
, LEAKAGE (nA)
1.5
100k
10k
1k
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 175°C
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
1.0
100.00
10.00
1.00
0.10
T
J
= 25°C
0.5
0.0
−50
−25
0
25
50
75
100
125
150
175
0.01
5
10
15
20
25
30
35
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVD5C454NL
TYPICAL CHARACTERISTICS
10,000
C
ISS
C, CAPACITANCE (pF)
1,000
C
OSS
10
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
Q
GS
Q
GD
V
DS
= 32 V
I
D
= 40 A
T
J
= 25°C
100
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
0
5
10
15
20
25
C
RSS
10
30
35
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
GS
= 10 V
V
DS
= 32 V
I
D
= 40 A
100
t, TIME (ns)
100
Figure 8. Gate−to−Source vs. Total Charge
V
GS
= 0 V
t
r
t
d(off)
t
f
t
d(on)
10
T
J
= 125°C
10
1
T
J
= 25°C
T
J
=
−55°C
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
V
GS
≤
10 V
Single Pulse
T
C
= 25°C
100
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
10
ms
I
PEAK
, (A)
T
J(initial)
= 25°C
10
T
J(initial)
= 100°C
10
0.5 ms
1 ms
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
10 ms
1
0.1
100
1000
1
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVD5C454NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10
R(t) (°C/W)
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
ORDERING INFORMATION
Order Number
NVD5C454NLT4G
Package
DPAK
(Pb−Free)
Shipping
†
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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