V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.43 V at I
F
= 5 A
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
FEATURES
ITO-220AB
TO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
V30120S
PIN 1
PIN 2
CASE
3
VF30120S
PIN 1
1
1
PIN 2
2
3
PIN 3
PIN 3
D
2
PAK (TO-263AB)
K
K
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
VI30120S
K
HEATSINK
A
NC
VB30120S
NC
A
1
PIN 2
K
2
3
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, D
2
PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
PIN 1
PIN 3
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 30 A
T
J
max.
Package
Circuit configuration
30 A
120 V
300 A
0.74 V
150 °C
TO-220AB, ITO-220AB,
D
2
PAK (TO-263AB), TO-262AA
Single
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy at T
J
= 25 °C, L = 100 mH
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
V30120S
VF30120S VB30120S
120
30
300
180
0.5
10 000
1500
-40 to +150
VI30120S
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 18-Jun-2018
Document Number: 88974
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 5 A
I
F
= 15 A
T
A
= 25 °C
V
F
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R
I
F
= 30 A
I
F
= 5 A
I
F
= 15 A
I
F
= 30 A
V
R
= 90 V
SYMBOL
TYP.
0.50
0.70
0.99
0.43
0.60
0.74
18
12
-
22
MAX.
-
-
1.10
-
-
0.82
-
-
500
35
μA
mA
μA
mA
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage per diode
(1)
Reverse current per diode
(2)
V
R
= 120 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JC
V30120S
1.6
VF30120S
4.0
VB30120S
1.6
VI30120S
1.6
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
V30120S-E3/4W
VF30120S-E3/4W
VB30120S-E3/4W
VB30120S-E3/8W
VI30120S-E3/4W
UNIT WEIGHT (g)
1.88
1.75
1.39
1.39
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
40
30
Resistive or Inductive Load
35
D = 0.5
D = 0.8
Average Forward Rectified Current (A)
Average Power Loss (W)
V(B,I)30120S
30
25
20
15
10
5
Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
175
VF30120S
25
D = 0.3
20
D = 0.2
D = 1.0
D = 0.1
T
10
15
5
D = t
p
/T
t
p
0
0
5
10
15
20
25
30
35
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 -
Forward Current Derating Curve
Fig. 2 -
Forward Power Loss Characteristics Per Diode
Revision: 18-Jun-2018
Document Number: 88974
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
10
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
T
A
= 150 °C
Junction to Case
10
T
A
= 125 °C
T
A
= 100 °C
1
1
T
A
= 25 °C
V(B,I)30120S
0.1
0.01
0.1
1
10
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 -
Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 -
Typical Transient Thermal Impedance Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
10
T
A
= 125 °C
1
T
A
= 100 °C
Junction to Case
1
0.1
T
A
= 25 °C
0.01
VF30120S
0.1
0.01
0.1
1
10
100
0.001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 -
Typical Reverse Characteristics Per Diode
Fig. 7 -
Typical Transient Thermal Impedance Per Diode
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Junction Capacitance (pF)
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 -
Typical Junction Capacitance Per Diode
Revision: 18-Jun-2018
Document Number: 88974
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 18-Jun-2018
Document Number: 88974
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.33 (8.38) MIN.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 18-Jun-2018
Document Number: 88974
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
