VS-10CVH02-M3
www.vishay.com
Vishay Semiconductors
Hyper Fast Rectifier, 2 x 5 A FRED Pt
®
Base
common
cathode
4
FEATURES
• Hyper fast recovery time
• 175 °C max. operating junction temperature
• Low forward voltage drop reduced Q
rr
and soft
recovery
• Low leakage current
• Very low profile - typical height of 1.3 mm
• Ideal for automated placement
• Polyimide passivation for high reliability standard
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
4
1
2
3
SlimDPAK
(TO-252AE)
2
Common
cathode
3
1
Anode
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
SlimDPAK (TO-252AE)
2x5A
200 V
0.74 V
16 ns
175 °C
Common cathode
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers designed with
optimized performance of forward voltage drop, hyper fast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
per leg
per device
per leg
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 165 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
200
5
10
100
-55 to +175
°C
A
UNITS
V
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
I
R
= 100 μA
I
F
= 5 A
Forward voltage
V
F
I
F
= 10 A
I
F
= 5 A, T
J
= 150 °C
I
F
= 10 A, T
J
= 150 °C
Reverse leakage current per leg
Junction capacitance per leg
I
R
C
T
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
-
TYP.
-
0.90
1.0
0.74
0.85
-
-
17
MAX.
-
1.04
1.17
0.84
1.05
4
80
-
μA
pF
V
UNITS
Revision: 04-May-17
Document Number: 96097
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CVH02-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
RR
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 5 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
16
-
21
30
2.5
4
25
60
MAX.
-
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to ambient
Thermal resistance, junction to case, per diode
Marking device
SYMBOL
T
J
, T
Stg
R
thJA (1)(2)
R
thJC (3)
Case style SlimDPAK (TO-252AE)
TEST CONDITIONS
MIN.
-55
-
-
TYP.
-
73
2.1
MAX.
175
90
2.5
UNITS
°C
°C/W
10CVH02
Notes
(1)
The heat generated must be less than thermal conductivity from junction to ambient; dP /dT < 1R
D
J
thJA
(2)
Free air, mounted or recommended copper pad area; thermal resistance R
thJA
- junction to ambient
(3)
Mounted on infinite heatsink
I
F
- Instantaneous Forward Current (A)
100
100
175 °C
10
1
0.1
75 °C
0.01
0.001
0.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
50
100
150
200
50 °C
I
R
- Reverse Current (μA)
150 °C
125 °C
100 °C
10
T
J
= 175 °C
T
J
= -40 °C
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
25 °C
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 04-May-17
Document Number: 96097
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CVH02-M3
www.vishay.com
100
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
10
0
25
50
75
100
125
150
175
200
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
100
Z
thJC
- Thermal Impedance (°C/W)
R
thJA
10
R
thJC
1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
200
7
R
thJC
= 2.1 °C/W
6
5
4
3
2
1
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS limit
Allowable Case Temperature (°C)
180
160
140
120
100
80
60
40
20
0
DC
See
note
(1)
R
thJA
= 73 °C/W
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 04-May-17
Document Number: 96097
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CVH02-M3
www.vishay.com
45
40
35
30
80
125 °C
120
100
Vishay Semiconductors
Q
rr
(nC)
t
rr
(ns)
125 °C
25 °C
25
20
15
10
5
100
1000
60
25 °C
40
20
0
100
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 04-May-17
Document Number: 96097
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CVH02-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
10
2
C
3
V
4
H
5
02
6
-M3
7
Vishay Semiconductors product
Current rating (10 = 10 A)
Circuit configuration:
C = common cathode
V = SlimDPAK
Process type,
H = hyper fast recovery
Voltage code (02 = 200 V)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-10CVH02-M3/I
QUANTITY PER REEL
4500
MINIMUM ORDER QUANTITY
4500
PACKAGING DESCRIPTION
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?96081
www.vishay.com/doc?96085
www.vishay.com/doc?88869
Revision: 04-May-17
Document Number: 96097
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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