LTC5530
Precision 300MHz to 7GHz
RF Detector with Shutdown
and Gain Adjustment
FEATURES
s
s
s
s
s
s
s
s
s
DESCRIPTIO
Temperature Compensated Internal Schottky
Diode RF Detector
Wide Input Frequency Range: 300MHz to 7GHz*
Wide Input Power Range: –32dBm to 10dBm
Buffered Detector Output with External Gain Control
Low Starting Voltage: 120mV
±35mV
for Gain = 2X
Wide V
CC
Range of 2.7V to 6V
Low Operating Current: 500µA
Low Shutdown Current: <2µA
Available in a Low Profile (1mm) SOT-23 Package
The LTC
®
5530 is an RF power detector for RF applications
operating in the 300MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and buffer
amplifier are combined in a small ThinSOT
TM
package. The
supply voltage range is optimized for operation from a
single lithium-ion cell or 3xNiMH.
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the V
OUT
pin. The output buffer gain is set via
external resistors. A power saving shutdown mode re-
duces current to less than 2µA.
The LTC5530 operates with input power levels from
–32dBm to 10dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
*
Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
APPLICATIO S
s
s
s
s
s
s
s
802.11a, 802.11b, 802.11g, 802.15, 802.16
Multimode Mobile Phone Products
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
TYPICAL APPLICATIO
Output Voltage vs RF Input Power
3600
300MHz to 7GHz RF Power Detector
33pF
RF
INPUT
1
LTC5530
V
CC
6
RF
IN
100pF
2
GND
V
OUT
5
R
A
SHDN
V
M
5530 TA01
V
OUT
OUTPUT VOLTAGE (mV)
V
CC
= 3.6V
3200 T
A
= 25°C
GAIN = 2
2800
2400
2000
1600
1200
800
400
V
CC
0.1µF
DISABLE ENABLE
3
4
R
B
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
U
300MHz
1000MHz
2000MHz
3000MHz
4000MHz
5000MHz
6000MHz
7000MHz
4
8
5530 TA02
U
U
5530f
1
LTC5530
ABSOLUTE
(Note 1)
AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW
RF
IN
1
GND 2
SHDN 3
6 V
CC
5 V
OUT
4 V
M
V
CC
, V
OUT
, SHDN, V
M ......................................
–0.3V to 6.5V
RF
IN
Voltage ......................................(V
CC
±
1.5V) to 7V
RF
IN
Power (RMS) .............................................. 12dBm
I
VOUT
...................................................................... 5mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ORDER PART
NUMBER
LTC5530ES6
S6 PART
MARKING
LBDX
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
T
JMAX
= 125°C,
θ
JA
= 250°C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The
q
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
CC
= 3.6V, SHDN = V
CC
= HI, SHDN = 0V = LO, RF Input Signal is Off,
R
A
= R
B
= 1k, SHDN = HI unless otherwise noted.
PARAMETER
V
CC
Operating Voltage
I
VCC
Operating Current
I
VCC
Shutdown Current
V
OUT
(No RF Input)
V
OUT
Output Current
V
OUT
Enable Time
V
OUT
Bandwidth
V
OUT
Load Capacitance
V
OUT
Slew Rate
V
OUT
Noise
V
M
Voltage Range
V
M
Input Current
SHDN Voltage LO, Chip Disabled
SHDN Voltage HI, Chip Enabled
SHDN Input Current
RF
IN
Input Frequency Range
RF
IN
Input Power Range
RF
IN
AC Input Resistance
RF
IN
Input Shunt Capacitance
V
CC
= 2.7V to 6V
V
CC
= 2.7V to 6V
SHDN = 3.6V
(Note 8)
RF Frequency = 300MHz to 7GHz (Note 5, 6) V
CC
= 2.7V to 6V
F = 1000MHz, Pin = –25dBm
F = 1000MHz, Pin = –25dBm
I
VOUT
= 0mA
SHDN = LO
R
LOAD
= 2k
SHDN = LO
V
OUT
= 1.75V, V
CC
= 2.7V,
∆V
OUT
< 10mV
SHDN = LO to HI, C
LOAD
= 33pF, R
LOAD
= 2k
C
LOAD
= 33pF, R
LOAD
= 2k (Note 4)
(Notes 6, 7)
V
RFIN
= 1V Step, C
LOAD
= 33pF, R
LOAD
= 2k (Note 3)
V
CC
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination
q
q
q
q
q
q
ELECTRICAL CHARACTERISTICS
CONDITIONS
MIN
q
q
q
q
q
q
TYP
0.5
0.01
MAX
6
0.7
2
155
UNITS
V
mA
µA
mV
mV
mA
µs
MHz
pF
V/µs
mV
P-P
2.7
85
2
100 to 140
1
4
8
2
20
33
3
1
0
–0.5
1.4
22
300 to 7000
–32 to 10
220
0.65
36
V
CC
– 1.8V
0.5
0.35
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3:
The rise time at V
OUT
is measured between 1.3V and 2.3V.
Note 4:
Bandwidth is calculated based on the 10% to 90% rise time
equation: BW = 0.35/rise time.
Note 5:
RF performance is tested at 1800MHz
Note 6:
Guaranteed by design.
Note 7:
Capacitive loading greater than this value may result in circuit
instability.
Note 8:
Higher frequency operation is achievable with reduced
performance. Consult factory for more information.
5530f
2
U
V
µA
V
V
µA
MHz
dBm
Ω
pF
W
U
U
W W
W
LTC5530
TYPICAL PERFOR A CE CHARACTERISTICS
Output Voltage vs Supply Voltage
(RF Input Signal Off)
130
GAIN = 2
T
A
= 85°C
500
V
OUT
OUTPUT VOLTAGE (mV)
SUPPLY CURRENT (µA)
125
480
V
OUT
OUTPUT VOLTAGE (mV)
120
T
A
= 25°C
115
T
A
= –40°C
110
2.5
3.0
5.0 5.5
SUPPLY VOLTAGE V
CC
(V)
3.5
4.0
4.5
Typical Detector Characteristics,
300MHz
3600
V
CC
= 3.6V
3200 GAIN =2
V
OUT
OUTPUT VOLTAGE (mV)
3600
T
A
= –40°C
V
OUT
OUTPUT VOLTAGE (mV)
V
OUT
OUTPUT VOLTAGE (mV)
2800
2400
2000
1600
1200
800
400
T
A
= 25°C
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
Typical Detector Characteristics,
3000MHz
3600
V
CC
= 3.6V
GAIN = 2
3200
3600
V
OUT
OUTPUT VOLTAGE (mV)
V
OUT
OUTPUT VOLTAGE (mV)
2800
2400
2000
1600
1200
800
400
T
A
= –40°C
2800
2400
2000
1600
1200
800
400
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
V
OUT
OUTPUT VOLTAGE (mV)
T
A
= 25°C
T
A
= 85°C
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
U W
5530 G01
Supply Current vs Supply Voltage
(RF Input Signal Off)
GAIN = 2
T
A
= –40°C
V
OUT
vs RF Input Power and V
CC
1000MHz
5600
4800
4000
3200
2400
1600
800
V
CC
= 6V
V
CC
= 5V
V
CC
= 4V
V
CC
= 3V
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5530
G03
T
A
= 25°C
GAIN = 2
460
T
A
= 25°C
440
T
A
= 85°C
6.0
420
2.5
0
3.0
5.0 5.5
SUPPLY VOLTAGE V
CC
(V)
3.5
4.0
4.5
6.0
5530 G02
Typical Detector Characteristics,
1000MHz
V
CC
= 3.6V
3200 GAIN =2
2800
2400
2000
1600
1200
800
400
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
3600
Typical Detector Characteristics,
2000MHz
V
CC
= 3.6V
3200 GAIN = 2
2800
2400
2000
1600
1200
800
400
T
A
= 85°C
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
4
8
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
8
0
–32 –28 –24 –20 –16 –12 –8 –4
0
4
8
RF INPUT POWER (dBm)
5530
G05
5530
G06
5530
G04
Typical Detector Characteristics,
4000MHz
V
CC
= 3.6V
GAIN = 2
3200
3600
Typical Detector Characteristics,
5000MHz
V
CC
= 3.6V
GAIN = 2
3200
2800
2400
2000
1600
1200
800
T
A
= 85°C
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
T
A
= 25°C
T
A
= –40°C
4
8
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
8
4
8
5530
G07
5530
G08
5530
G09
5530f
3
LTC5530
TYPICAL PERFOR A CE CHARACTERISTICS
Typical Detector Characteristics,
6000MHz
3600
V
CC
= 3.6V
GAIN = 2
3200
3600
V
OUT
OUTPUT VOLTAGE (mV)
2800
2400
2000
1600
1200
800
400
V
OUT
OUTPUT VOLTAGE (mV)
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
Typical Detector Characteristics,
300MHz
3600
V
CC
= 3.6V
GAIN = 4
3200
3600
T
A
= –40°C
T
A
= 25°C
V
OUT
OUTPUT VOLTAGE (mV)
2800
2400
2000
1600
1200
800
400
0
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
T
A
= 85°C
V
OUT
OUTPUT VOLTAGE (mV)
4
U W
Typical Detector Characteristics,
7000MHz
V
CC
= 3.6V
GAIN = 2
3200
T
A
= –40°C
2800
2400
2000
1600
1200
800
400
T
A
= –40°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 85°C
4
8
0
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
4
8
5530
G10
5530
G11
Typical Detector Characteristics,
1000MHz
V
CC
= 3.6V
GAIN = 4
3200
2800
2400
2000
1600
1200
800
400
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
0
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
5530
G12
5530
G13
5530f
LTC5530
TYPICAL PERFOR A CE CHARACTERISTICS
V
OUT
Slope vs RF Input Power
300MHz
1000
V
CC
= 3.6V
GAIN = 2
1000
V
OUT
SLOPE (mV/dB)
V
OUT
SLOPE (mV/dB)
V
OUT
SLOPE (mV/dB)
100
T
A
= –40°C
10
T
A
= 85°C
T
A
= 25°C
1
–30
–25
–20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5530 G14
V
OUT
Slope vs RF Input Power
3000MHz
1000
V
CC
= 3.6V
GAIN = 2
1000
V
OUT
SLOPE (mV/dB)
V
OUT
SLOPE (mV/dB)
V
OUT
SLOPE (mV/dB)
100
T
A
= –40°C
10
T
A
= 85°C
T
A
= 25°C
1
–30
–25
–20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5530 G17
V
OUT
Slope vs RF Input Power
6000MHz
1000
V
CC
= 3.6V
GAIN = 2
1000
V
OUT
SLOPE (mV/dB)
100
T
A
= –40°C
10
T
A
= 85°C
V
OUT
SLOPE (mV/dB)
1
–30 –25
U W
V
OUT
Slope vs RF Input Power
1000MHz
V
CC
= 3.6V
GAIN = 2
1000
V
OUT
Slope vs RF Input Power
2000MHz
V
CC
= 3.6V
GAIN = 2
100
100
T
A
= –40°C
10
T
A
= 85°C
T
A
= –40°C
10
T
A
= 85°C
T
A
= 25°C
1
–30
–25
–20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5530 G15
T
A
= 25°C
1
–30
–25
–20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5530 G16
V
OUT
Slope vs RF Input Power
4000MHz
V
CC
= 3.6V
GAIN = 2
1000
V
OUT
Slope vs RF Input Power
5000MHz
V
CC
= 3.6V
GAIN = 2
100
100
T
A
= –40°C
10
T
A
= 85°C
T
A
= –40°C
10
T
A
= 85°C
T
A
= 25°C
1
–30 –25
–20 –15 –10 –5
0
RF INPUT POWER (dBm)
5
5530 G18
T
A
= 25°C
1
–30 –25
–20 –15 –10 –5
0
RF INPUT POWER (dBm)
5
5530 G19
V
OUT
Slope vs RF Input Power
7000MHz
V
CC
= 3.6V
GAIN = 2
100
10
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
–20 –15 –10 –5
0
RF INPUT POWER (dBm)
5
5530 G20
1
–30 –25 –20 –15 –10 –5
0
RF INPUT POWER (dBm)
5
5530 G21
5530f
5
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