电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N5392

产品描述1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-41
产品类别半导体    分立半导体   
文件大小75KB,共3页
制造商MCC
官网地址http://www.mccsemi.com
下载文档 选型对比 全文预览

1N5392在线购买

供应商 器件名称 价格 最低购买 库存  
1N5392 - - 点击查看 点击购买

1N5392概述

1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-41

文档预览

下载PDF文档
MCC
Features
Low Current Leakage
Low Forward Voltage
High Current Capability
Low Cost
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
1N5391
THRU
1N5399
1.5 Amp Rectifier
50 - 1000 Volts
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Typical Thermal Resistance; 26°C/W Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
300V
400V
500V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
300V
400V
500V
600V
800V
1000V
DO-15
D
1N5391
1N5392
1N5393
1N5394
1N5395
1N5396
1N5397
1N5398
1N5399
---
---
---
---
---
---
---
---
---
35V
70V
140V
210V
280V
350V
420V
560V
700V
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1.5A
T
A
= 70°C
Current
Peak Forward Surge
I
FSM
50A
8.3ms, half sine**
Current
Maximum
1.1V
I
FM
= 1.5A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C*
Maximum DC
Reverse Current At
I
R
5.0µA
T
J
= 25°C
Rated DC Blocking
50µA
T
J
= 100°C
Voltage
Typical Junction
C
J
20pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
**8.3ms single half-wave superimposed on rated load(JEDEC method)
at Ta=75 deg C.
C
DIMENSIONS
INCHES
MIN
.230
.104
.026
1.000
MM
MIN
5.80
2.60
.70
25.40
DIM
A
B
C
D
MAX
.300
.140
.034
---
MAX
7.60
3.60
.90
---
NOTE
www.mccsemi.com

1N5392相似产品对比

1N5392 1N5391 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399
描述 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AL 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1837  18  2247  701  2695  37  1  46  15  55 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved