TVS8814, TVS8818
Transient Voltage
Suppressors
Low Capacitance TVS Protection for High
Speed Data
The TVS8814 and TVS8818 transient voltage suppressors are
designed specifically to protect 10/100 and GbE Ethernet signals from
high levels of surge current. Low clamping voltage under high surge
conditions make this device an ideal solution for protecting voltage
sensitive lines leading to Ethernet transceiver chips. Low capacitance
combined with flow-through style packaging allows for easy PCB
layout and matched trace lengths necessary to maintain consistent
impedance between high-speed differential lines. The integrated 4 and
8 lines of protection in flow-thru type packages offer a simplified
solution with premier performance for 10/100 and GbE Ethernet
applications.
Features
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MARKING
DIAGRAMS
4C M
G
UDFN8
CASE 506CV
4D M
G
UDFN10
CASE 506CU
XX = Specific Device Code
M = Date Code
G
= Pb−Free Package
•
Protection for the Following IEC Standards:
•
•
•
•
IEC 61000−4−2 (ESD)
±30
kV (Contact)
IEC61000−4−5 (Lightning) 35 A (8/20
ms)
Flow−Thru Routing Scheme
2 pF Max, I/O to I/O
UL Flammability Rating of 94 V−0
This is a Pb−Free Device
ORDERING INFORMATION
Device
TVS8814MUTAG
TVS8818MUTAG
Package
UDFN8
(Pb−Free)
UDFN10
(Pb−Free)
Shipping
3000 / Tape & Reel
3000 / Tape & Reel
Typical Applications
•
10/100 and GbE Ethernet
•
MagJacks® / Integrated Magnetics
•
Notebooks/Desktops/Servers
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature −
Maximum (10 Seconds)
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
Maximum Peak Pulse Current
8/20
ms
@ T
A
= 25°C
10/700
ms
@ T
A
= 25°C
Symbol
T
J
T
stg
T
L
ESD
I
PP
35
20
Value
−55 to +125
−55 to +150
260
±30
±30
Unit
°C
°C
°C
kV
kV
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of survivability specs.
©
Semiconductor Components Industries, LLC, 2016
1
February, 2016 − Rev. 0
Publication Order Number:
TVS8814/D
TVS8814, TVS8818
TVS8814
GND
GND
I/O
I/O
GND
GND
GND
Pins 1, 4, 5, 8
Note: Common GND – Only minimum of 1 GND connection required
GND
I/O
I/O
Pin2 Pin3 Pin6 Pin7
TVS8818
GND
I/O
I/O
GND
I/O
I/O
GND
GND
GND
I/O
I/O
Pins 3, 8
Note: Common GND – Only minimum of 1 GND connection required
Pin1 Pin2 Pin4 Pin5 Pin6 Pin7 Pin9 Pin10
=
I/O
I/O
Figure 1. Pin Schematic
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
V
RWM
I
R
V
BR
I
T
V
HOLD
I
HOLD
R
DYN
I
PP
V
C
Parameter
Working Peak Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Holding Reverse Voltage
Holding Reverse Current
Dynamic Resistance
Maximum Peak Pulse Current
Clamping Voltage @ I
PP
V
C
= V
HOLD
+ (I
PP
* R
DYN
)
I
PP
Uni−Directional TVS
R
DYN
V
CL
V
BR
V
RWM
I
R
I
T
V
CL
V
I
PP
R
DYN
I
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Forward Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Clamping Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
Junction Capacitance
Symbol
V
RWM
V
F
V
BR
I
R
V
C
V
C
V
C
V
C
V
C
C
J
C
J
Conditions
Any I/O to GND (Note 1)
I
F
= 10 mA, GND to All IO Pins
I
T
= 1 mA, I/O to GND
V
RWM
= 3.0 V, I/O to GND
I
PP
= 1 A, Any I/O to GND (8/20
ms
pulse)
I
PP
= 10 A, Any I/O to GND (8/20
ms
pulse)
I
PP
= 25 A, Any I/O to GND (8/20
ms
pulse)
I
PP
= 35 A, Any I/O to GND (8/20
ms
pulse)
IEC61000−4−2,
±8
kV Contact
V
R
= 0 V, f = 1 MHz between I/O Pins
V
R
= 0 V, f = 1 MHz between I/O Pins and GND
See Figures 7 and 8
1.5
2.0
5.0
0.5
3.2
0.85
3.5
Min
Typ
Max
3.0
1.1
5.0
0.5
5.0
6.0
10
15
Unit
V
V
V
mA
V
V
V
V
V
pF
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
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2
TVS8814, TVS8818
t
r
= rise time to peak value [8
ms]
t
f
= decay time to half value [20
ms]
20
18
16
14
V
pk
(V)
12
10
8
6
4
2
0
0 t
r
t
f
TIME (ms)
0
0
5
10
15
20
I
pk
(A)
25
30
35
IO−GND
IO−IO
Ipp - PEAK PULSE CURRENT - %Ipp
100
Peak
Value
50
Half Value
Figure 2. IEC61000−4−5 8/20
ms
Pulse
Waveform
Figure 3. Clamping Voltage vs. Peak Pulse Current
(t
p
= 8/20
ms
per Figure 2)
20
Ipp - PEAK PULSE CURRENT - %Ipp
100
Peak
Value
t
r
= rise time to peak value [10
ms]
t
f
= decay time to half value [700
ms]
18
16
14
V
pk
(V)
12
10
8
6
4
2
IO−GND
IO−IO
50
Half Value
0
0 t
r
t
f
TIME (ms)
0
0
2
4
6
8
10 12
I
pk
(A)
14
16
18
20
Figure 4. IEC61000−4−5 10/700
ms
Pulse
Waveform
90
80
70
60
VOLTAGE (V)
VOLTAGE (V)
0
20
40
60
80
TIME (ns)
100
120
140
50
40
30
20
10
0
−10
−20
Figure 5. Clamping Voltage vs. Peak Pulse Current
(t
p
= 10/700
ms
per Figure 4)
10
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−20
0
20
40
60
80
TIME (ns)
100
120
140
Figure 6. IEC61000−2−4 +8 kV Contact
Clamping Voltage
Figure 7. IEC61000−2−4 −8 kV Contact
Clamping Voltage
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3
TVS8814, TVS8818
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
I (A)
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−11
1.E−12
−2
−1
0
1
2
V (V)
3
4
5
6
C (pF)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
V
Bias
(V)
2.5
3.0
3.5
IO−IO
IO−GND
Figure 8. IV Characteristics
Figure 9. CV Characteristics
IO−GND
IO−GND
Figure 10. RF Insertion Loss
Figure 11. Capacitance Over Frequency
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4
TVS8814, TVS8818
1
2
3
TVS8814
4
RJ−45
Connector
5
DFN8
6
7
8
Black = Top Layer
Red = Other Layer
Figure 12. 10/100 Ethernet Layout Diagram and Flow−thru Routing Scheme
1
2
TVS8818
3
4
RJ−45
Connector
5
6
DFN10
7
8
Black = Top Layer
Red = Other Layer
Figure 13. GbE Ethernet Layout Diagram and Flow−thru Routing Scheme
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