THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4080EY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
Time
c
t
d(off)
t
f
I
SM
V
SD
I
F
= 3.5 A, V
GS
= 0
V
DD
= 20 V, R
L
= 20
I
D
1 A, V
GEN
= 10 V, R
g
= 6
f = 1 MHz
V
GS
= 10 V
V
DS
= 75 V, I
D
= 5 A
V
GS
= 0 V
V
DS
= 75 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay
Fall Time
c
Pulsed Current
a
Forward Voltage
-
-
-
-
-
-
0.2
-
-
-
-
-
-
1100
75
33
25
5.2
8.7
0.4
11.4
3.2
19.1
2.5
-
0.75
1590
130
55
33
-
-
1
15
4.5
25
3.2
72
1.1
A
V
ns
nC
pF
V
GS
= 10 V
V
GS
= 10 V
V
DS
= 150 V
V
DS
= 150 V, T
J
= 125 °C
V
DS
= 150 V, T
J
= 175 °C
V
DS
5 V
I
D
= 10 A
I
D
= 10 A, T
C
= 125 °C
I
D
= 10 A, T
C
= 175 °C
150
2.5
-
-
-
-
30
-
-
-
-
-
3
-
-
-
-
-
0.070
-
-
51
-
4
± 100
1
50
150
-
0.085
0.167
0.220
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 10 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1616-Rev. A, 22-Aug-16
Document Number: 71158
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4080EY
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
60
V
GS
= 10 V thru 7 V
Vishay Siliconix
Axis Title
10000
50
10000
48
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
36
V
GS
= 6 V
40
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
T
C
= 25 °C
30
24
100
12
20
100
10
T
C
= 125 °C
T
C
= -55 °C
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
1.5
10000
2000
Axis Title
10000
1.2
2nd line
I
D
- Drain Current (A)
2nd line
C - Capacitance (pF)
1000
1st line
2nd line
0.9
1600
C
iss
1000
1st line
2nd line
100
10
80
100
10000
1000
1st line
2nd line
100
10
48
60
1200
0.6
T
C
= 25 °C
800
C
rss
100
0.3
T
C
= 125 °C
T
C
= -55 °C
400
C
oss
0.0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
0
0
20
40
60
V
DS
- Drain-to-Source Voltage (V)
2nd line
Transfer Characteristics
Capacitance
Axis Title
50
10000
0.5
Axis Title
2nd line
g
fs
- Transconductance (S)
T
C
= 25 °C
T
C
= -55 °C
1000
1st line
2nd line
30
2nd line
R
DS(on)
- On-Resistance (Ω)
40
0.4
0.3
20
T
C
= 125 °C
0.2
V
GS
= 4.5 V
100
10
0.1
V
GS
= 10 V
0
0
4
8
12
16
20
I
D
- Drain Current (A)
2nd line
10
0.0
0
12
24
36
I
D
- Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
S16-1616-Rev. A, 22-Aug-16
Document Number: 71158
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4080EY
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 5 A
V
DS
= 75 V
Vishay Siliconix
Axis Title
10000
100
10000
8
10
1000
1st line
2nd line
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
1000
1st line
2nd line
100
10
6
1
4
100
2
0.1
0.01
0
0
6
12
18
24
30
Q
g
- Total Gate Charge (nC)
2nd line
10
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
Gate Charge
Source Drain Diode Forward Voltage
Axis Title
3.0
2nd line
R
DS(on)
- On-Resistance (Normalized)
I
D
= 5 A
Axis Title
10000
1.0
10000
2.5
2nd line
V
GS(th)
Variance (V)
V
GS
= 10 V
0.4
1000
1st line
2nd line
I
D
= 5 mA
1000
1st line
2nd line
100
2.0
-0.2
1.5
V
GS
= 6 V
-0.8
I
D
= 250 μA
100
1.0
-1.4
0.5
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
-2.0
-50 -25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
2nd line
10
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
1.0
10000
2nd line
V
DS
- Drain-to-Source Voltage (V)
200
I
D
= 1 mA
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.8
1000
1st line
2nd line
0.6
190
1000
1st line
2nd line
100
160
10
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
180
0.4
100
T
J
= 150 °C
170
0.2
T
J
= 25 °C
0.0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
150
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
S16-1616-Rev. A, 22-Aug-16
Document Number: 71158
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71158.
S16-1616-Rev. A, 22-Aug-16
Document Number: 71158
5
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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