LTE3401H
XS
ON
6
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 2.1 — 23 October 2018
Product data sheet
1
General description
The LTE3401H is a high-gain Low-Noise Amplifier (LNA) with bypass switch for LTE
receiver applications, available in a small plastic 6-pin thin leadless package.
The LTE3401H delivers system-optimized gain for both primary and diversity applications
where sensitivity improvement is required. The high linearity of this low noise device
ensures the required receive sensitivity independent of cellular transmit power level in
frequency division duplex (FDD) systems. When receive signal strength is sufficient, the
LTE3401H can be switched off to operate in bypass mode at increased IP3
i
level and a 1
μA supply current, to lower power consumption. The LTE3401H is internally AC coupled
and requires only one external matching inductor.
The LTE3401H is optimized for 1710 MHz to 2690 MHz, but supports 1452 MHz - 1710
MHz as well.
2
Features and benefits
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Operating frequency from 1452 MHz to 2690 MHz
Noise figure = 0.65 dB
Gain 19.5 dB
High input 1 dB compression point of -10.5 dBm
High in band IP3
i
of +2 dBm
Bypass switch insertion loss of 2.7 dB
Supply voltage 1.5 V to 3.1 V
Integrated RF supply decoupling capacitor
Optimized performance at a supply current of 13.4 mA
Bypass mode current consumption < 1 μA
Integrated temperature stabilized bias for easy design
Requires only one input matching inductor
Input and Output AC coupled through DC blocking capacitors
Integrated matching for the output
ESD protection on all pins
Low bill of materials (BOM)
6 pins leadless package: 1.1 mm x 0.7 mm x 0.37 mm: 0.40 mm pitch
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity Level 1
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
LTE3401H
3
Applications
•
•
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•
LNA for LTE reception in smart phones
feature phones
tablet PCs
RF front-end modules
LTE3401H
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2018. All rights reserved.
Product data sheet
Rev. 2.1 — 23 October 2018
2 / 16
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
LTE3401H
4
Quick reference data
Table 1. Quick reference data
f = 2140 MHz; V
CC
= 2.8 V; V
I(CTRL)
> 0.8 V; T
amb
= 25 °C. Input matched to 50 Ω using application diagram from
Figure 3
and component values as in
Table 10.
Unless otherwise specified.
Symbol
I
CC
G
p
NF
P
i(1 dB)
IP3
i
[1]
Parameter
supply current
power gain
noise figure
input power at 1 dB gain
compression
input third-order intercept point
Conditions
in gain mode
in bypass mode
in gain mode
in bypass mode
[1]
Min
-
-
-
-
-
-
Typ
13.4
-
19.5
-2.7
0.65
Max
16.8
1
-
-
-
Unit
mA
µA
dB
dB
dB
dBm
dBm
-10.5 -
+2.0
-
Δf = 1 MHz
-
PCB losses are subtracted.
5
Ordering information
Package
Name
Description
plastic extremely thin small outline package; no leads; 6
terminals; body 1.1 x 0.7 x 0.37 mm
Version
SOT1232
XSON6
Table 2. Ordering information
Type number
LTE3401HX
6
Marking
Marking code
W
Table 3. Marking code
Type number
LTE3401H
LTE3401H
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2018. All rights reserved.
Product data sheet
Rev. 2.1 — 23 October 2018
3 / 16
NXP Semiconductors
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
LTE3401H
8
Pinning information
8.1 Pinning
GND
4
3
RF_OUT
RF_IN
5
2
V
CC
CTRL
6
1
GND
Transparent top view
aaa-022134
Figure 2. Pin configuration
8.2 Pin description
Table 4. Pinning
Symbol
GND
V
CC
RF_OUT
GND
RF_IN
CTRL
Pin
1
2
3
4
5
6
Description
RF ground
supply voltage
RF out
RF ground
RF in
gain control, switch between gain and bypass mode
LTE3401H
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2018. All rights reserved.
Product data sheet
Rev. 2.1 — 23 October 2018
5 / 16
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