Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BZV85 series
Voltage regulator diodes
Rev. 03 — 10 November 2009
Product data sheet
1. Product profile
1.1 General description
Medium-power voltage regulator diodes in small hermetically sealed leaded
SOD66 (DO-41) glass packages.
The diodes are available in the normalized E24 approximately
±5
% tolerance range.
The series consists of 33 types with nominal working voltages from 3.6 V to 75 V.
1.2 Features
I
Total power dissipation: max. 1.3 W
I
Working voltage range:
nominal 3.3 V to 75 V (E24 range)
I
Small hermetically sealed glass
package
I
Tolerance series: approximately
±5
%
I
Non-repetitive peak reverse power
dissipation: max. 60 W
1.3 Applications
I
Stabilization purposes
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
Quick reference data
Parameter
forward voltage
total power dissipation
T
amb
= 25
°C;
lead length 10 mm
P
ZSM
[1]
[2]
[3]
[1]
Conditions
I
F
= 50 mA
Min
-
-
-
-
Typ
-
-
-
-
Max
1
1
1.3
60
Unit
V
W
W
W
[2]
non-repetitive peak reverse
power dissipation
square wave;
t
p
= 100
µs
[3]
Device mounted on a Printed-Circuit Board (PCB) with 1 cm
2
copper area per lead.
If the leads are kept at T
tp
= 55
°C
at 4 mm from body.
T
j
= 25
°C
prior to surge
NXP Semiconductors
BZV85 series
Voltage regulator diodes
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
k
a
Graphic symbol
1
2
006aaa152
[1]
The marking band indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
BZV85 series
[1]
[1]
Type number
Description
hermetically sealed glass package; axial leaded;
2 leads
Version
SOD66
-
The series consists of 33 types with nominal working voltages from 3.3 V to 75 V.
4. Marking
Table 4.
Marking codes
Marking code
The diodes are type branded.
Type number
BZV85 series
BZV85_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 10 November 2009
2 of 10
NXP Semiconductors
BZV85 series
Voltage regulator diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak reverse
current
square wave;
t
p
= 100
µs
half sine wave;
t
p
= 10 ms
P
tot
total power dissipation
T
amb
= 25
°C;
lead length 10 m
m
P
ZSM
T
j
T
stg
[1]
[2]
[3]
[2]
[1]
Conditions
Min
-
-
-
Max
500
see
Table 8
see
Table 8
1
Unit
mA
[1]
-
W
[3]
-
-
-
−65
1.3
60
200
+200
W
W
°C
°C
non-repetitive peak reverse
power dissipation
junction temperature
storage temperature
square wave;
t
p
= 100
µs
[1]
T
j
= 25
°C
prior to surge
Device mounted on a PCB with 1 cm
2
copper area per lead.
If the leads are kept at T
tp
= 55
°C
at 4 mm from body.
BZV85_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 10 November 2009
3 of 10
NXP Semiconductors
BZV85 series
Voltage regulator diodes
6. Thermal characteristics
Table 6.
Symbol
R
th(j-t)
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to tie-point
thermal resistance from
junction to ambient
Conditions
lead length 4 mm
lead length 10 mm
[1]
Min
-
-
Typ
-
-
Max
110
175
Unit
K/W
K/W
Device mounted on a PCB with 1 cm
2
copper area per lead.
10
3
R
th(j-t)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
10
0.10
0.05
006aab844
0.02
0.01
0
1
10
−2
10
−1
1
10
10
2
10
3
t
p
(ms)
10
4
Fig 1.
Thermal resistance from junction to tie-point as a function of pulse duration;
lead length 4 mm
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 50 mA
Min
-
Typ
-
Max
1
Unit
V
BZV85_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 10 November 2009
4 of 10
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
