电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RN2109MFV,L3F

产品描述双极晶体管 - 预偏置 Bias Resistor PNP -.1A -50V 47kohm
产品类别半导体    分立半导体    晶体管    双极晶体管 - 预偏置   
文件大小493KB,共7页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 全文预览

RN2109MFV,L3F概述

双极晶体管 - 预偏置 Bias Resistor PNP -.1A -50V 47kohm

RN2109MFV,L3F规格参数

参数名称属性值
厂商名称Toshiba(东芝)
产品种类双极晶体管 - 预偏置
配置Single
晶体管极性PNP
典型输入电阻器47 kOhms
典型电阻器比率2.14
安装风格SMD/SMT
封装 / 箱体SOT-723-3
直流集电极/Base Gain hfe Min70
集电极—发射极最大电压 VCEO- 50 V
集电极连续电流- 100 mA
峰值直流集电极电流- 100 mA
Pd-功率耗散150 mW
最大工作温度+ 150 C
系列RN2109MFV
封装Cut Tape
封装Reel
发射极 - 基极电压 VEBO- 15 V
通道模式Enhancement
最大直流电集电极电流- 100 mA
工厂包装数量8000
单位重量1.500 mg

文档预览

下载PDF文档
RN2107MFV to RN2109MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2107MFV, RN2108MFV, RN2109MFV
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
0.22±0.05
Unit: mm
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering
assembly cost.
1.2±0.05
0.8±0.05
1.2±0.05
0.8±0.05
0.32±0.05
0.13±0.05
1. BASE
2. EMITTER
3. COLLECTOR
Complementary to the RN1107MFV to RN1109MFV
0.4
0.4
A wide range of resistor values is available for use in various circuits.
1
2
3
Equivalent Circuit and Bias Resistor Values
0.5±0.05
Type No.
RN2107MFV
RN2108MFV
RN2109MFV
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
VESM
JEDEC
JEITA
TOSHIBA
2-1L1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2107MFV to
RN2109MFV
RN2107MFV
Emitter-base voltage
RN2108MFV
RN2109MFV
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2107MFV
to
RN2109MFV
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
150
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Weight: 1.5 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
0.5
0.45
Land Pattern Example
Unit: mm
1.15
0.4
0.45
0.4
0.4
Start of commercial production
2005-02
1
2016-09-14

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1638  255  2135  530  1833  13  55  54  32  8 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved