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TN2540N3-G P013

产品描述MOSFET N-CH Enhancmnt Mode MOSFET
产品类别半导体    分立半导体    晶体管    MOSFET   
文件大小658KB,共6页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
标准
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TN2540N3-G P013概述

MOSFET N-CH Enhancmnt Mode MOSFET

TN2540N3-G P013规格参数

参数名称属性值
厂商名称Microchip(微芯科技)
产品种类MOSFET
技术Si
安装风格Through Hole
封装 / 箱体TO-92-3
通道数量1 Channel
晶体管极性N-Channel
Vds-漏源极击穿电压400 V
Id-连续漏极电流175 mA
Rds On-漏源导通电阻12 Ohms
Vgs - 栅极-源极电压20 V
最小工作温度- 55 C
最大工作温度+ 150 C
Pd-功率耗散740 mW
配置Single
通道模式Enhancement
封装Cut Tape
封装Reel
高度5.33 mm
长度5.21 mm
产品MOSFET Small Signal
晶体管类型1 N-Channel
宽度4.19 mm
下降时间20 ns
上升时间15 ns
工厂包装数量2000
典型关闭延迟时间25 ns
典型接通延迟时间20 ns
单位重量453.600 mg

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TN2540
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN2540
Package Options
TO-92
TN2540N3-G
TO-243AA (SOT-89)
TN2540N8-G
Die*
TN2540ND
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
400
12
1.0
2.0
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available
Pin Configurations
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300 C
O
DRAIN
GATE
GATE
SOURCE
DRAIN
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Product Marking
TN
2 5 4 0
YYWW
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
TN5DW
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

TN2540N3-G P013相似产品对比

TN2540N3-G P013 TN2540N3-P002 TN2540N3-G-P002 TN2540N3-P013 TN2540N3-G P014
描述 MOSFET N-CH Enhancmnt Mode MOSFET MOSFET 400V 12Ohm MOSFET N-CH Enhancmnt Mode MOSFET MOSFET 400V 12Ohm MOSFET N-CH Enhancmnt Mode MOSFET
Product Attribute - Attribute Value Attribute Value Attribute Value -
制造商
Manufacturer
- Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) -
产品种类
Product Category
- MOSFET MOSFET MOSFET -
RoHS - N Details N -
技术
Technology
- Si Si Si -
安装风格
Mounting Style
- Through Hole Through Hole Through Hole -
封装 / 箱体
Package / Case
- TO-92-3 TO-92-3 TO-92-3 -
Number of Channels - 1 Channel 1 Channel 1 Channel -
Transistor Polarity - N-Channel N-Channel N-Channel -
Vds - Drain-Source Breakdown Voltage - 400 V 400 V 400 V -
Id - Continuous Drain Current - 175 mA 175 mA 175 mA -
Rds On - Drain-Source Resistance - 12 Ohms 12 Ohms 12 Ohms -
Vgs - Gate-Source Voltage - 20 V 20 V 20 V -
最小工作温度
Minimum Operating Temperature
- - 55 C - 55 C - 55 C -
最大工作温度
Maximum Operating Temperature
- + 150 C + 150 C + 150 C -
Configuration - Single Single Single -
Pd-功率耗散
Pd - Power Dissipation
- 1 W 740 mW 1 W -
Channel Mode - Enhancement Enhancement Enhancement -
高度
Height
- 5.33 mm 5.33 mm 5.33 mm -
长度
Length
- 5.21 mm 5.21 mm 5.21 mm -
产品
Product
- MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal -
Transistor Type - 1 N-Channel 1 N-Channel 1 N-Channel -
宽度
Width
- 4.19 mm 4.19 mm 4.19 mm -
Fall Time - 20 ns 20 ns 20 ns -
Rise Time - 15 ns 15 ns 15 ns -
工厂包装数量
Factory Pack Quantity
- 2000 2000 2000 -
Typical Turn-Off Delay Time - 25 ns 25 ns 25 ns -
Typical Turn-On Delay Time - 20 ns 20 ns 20 ns -
单位重量
Unit Weight
- 0.007760 oz 0.016000 oz 0.007760 oz -

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