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TN2540N3-P013

产品描述MOSFET 400V 12Ohm
产品类别半导体    分立半导体   
文件大小658KB,共6页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
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TN2540N3-P013概述

MOSFET 400V 12Ohm

TN2540N3-P013规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Microchip(微芯科技)
产品种类
Product Category
MOSFET
RoHSN
技术
Technology
Si
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage400 V
Id - Continuous Drain Current175 mA
Rds On - Drain-Source Resistance12 Ohms
Vgs - Gate-Source Voltage20 V
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
ConfigurationSingle
Pd-功率耗散
Pd - Power Dissipation
1 W
Channel ModeEnhancement
高度
Height
5.33 mm
长度
Length
5.21 mm
产品
Product
MOSFET Small Signal
Transistor Type1 N-Channel
类型
Type
FET
宽度
Width
4.19 mm
Fall Time20 ns
Rise Time15 ns
工厂包装数量
Factory Pack Quantity
2000
Typical Turn-Off Delay Time25 ns
Typical Turn-On Delay Time20 ns
单位重量
Unit Weight
0.007760 oz

文档预览

下载PDF文档
TN2540
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN2540
Package Options
TO-92
TN2540N3-G
TO-243AA (SOT-89)
TN2540N8-G
Die*
TN2540ND
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
400
12
1.0
2.0
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available
Pin Configurations
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300 C
O
DRAIN
GATE
GATE
SOURCE
DRAIN
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Product Marking
TN
2 5 4 0
YYWW
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
TN5DW
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

TN2540N3-P013相似产品对比

TN2540N3-P013 TN2540N3-P002 TN2540N3-G-P002 TN2540N3-G P014 TN2540N3-G P013
描述 MOSFET 400V 12Ohm MOSFET 400V 12Ohm MOSFET N-CH Enhancmnt Mode MOSFET MOSFET N-CH Enhancmnt Mode MOSFET MOSFET N-CH Enhancmnt Mode MOSFET
Product Attribute Attribute Value Attribute Value Attribute Value - -
制造商
Manufacturer
Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) - -
产品种类
Product Category
MOSFET MOSFET MOSFET - -
RoHS N N Details - -
技术
Technology
Si Si Si - -
安装风格
Mounting Style
Through Hole Through Hole Through Hole - -
封装 / 箱体
Package / Case
TO-92-3 TO-92-3 TO-92-3 - -
Number of Channels 1 Channel 1 Channel 1 Channel - -
Transistor Polarity N-Channel N-Channel N-Channel - -
Vds - Drain-Source Breakdown Voltage 400 V 400 V 400 V - -
Id - Continuous Drain Current 175 mA 175 mA 175 mA - -
Rds On - Drain-Source Resistance 12 Ohms 12 Ohms 12 Ohms - -
Vgs - Gate-Source Voltage 20 V 20 V 20 V - -
最小工作温度
Minimum Operating Temperature
- 55 C - 55 C - 55 C - -
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C + 150 C - -
Configuration Single Single Single - -
Pd-功率耗散
Pd - Power Dissipation
1 W 1 W 740 mW - -
Channel Mode Enhancement Enhancement Enhancement - -
高度
Height
5.33 mm 5.33 mm 5.33 mm - -
长度
Length
5.21 mm 5.21 mm 5.21 mm - -
产品
Product
MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal - -
Transistor Type 1 N-Channel 1 N-Channel 1 N-Channel - -
宽度
Width
4.19 mm 4.19 mm 4.19 mm - -
Fall Time 20 ns 20 ns 20 ns - -
Rise Time 15 ns 15 ns 15 ns - -
工厂包装数量
Factory Pack Quantity
2000 2000 2000 - -
Typical Turn-Off Delay Time 25 ns 25 ns 25 ns - -
Typical Turn-On Delay Time 20 ns 20 ns 20 ns - -
单位重量
Unit Weight
0.007760 oz 0.007760 oz 0.016000 oz - -
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