VE2045C-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.42 V at I
F
= 5 A
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
FEATURES
• Power pack
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
3
2
1
VE2045C
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters,
and polarity protection application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A (T
A
= 125 °C)
T
J
max.
Package
Diode variations
2 x 10 A
45 V
100 A
0.54 V
150 °C
TO-220AB
Common cathode
MECHANICAL DATA
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
VE2045C-E3
45
20
10
100
-40 to +150
UNIT
V
A
A
°C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
per diode
TEST CONDITIONS
I
F
= 5 A
I
F
= 10 A
I
F
= 5 A
I
F
= 10 A
Reverse current per diode
V
R
= 45 V
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
SYMBOL
TYP.
0.50
0.60
0.42
0.54
-
3
MAX.
-
0.70
-
0.63
500
15
μA
mA
V
UNIT
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
5 ms
Revision: 20-Dec-13
Document Number: 89980
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VE2045C-E3
www.vishay.com
Vishay General Semiconductor
SYMBOL
per diode
per device
per device
R
JC
R
JA
(1)(2)
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
VE2045C-E3
3.5
2.2
55
°C/W
UNIT
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient:
P
/T < 1 R
D
J
JA
(2)
Free air, without heatsink
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
PREFERRED P/N
VE2045C-E3/45
UNIT WEIGHT (g)
1.93
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
22
20
18
16
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
T
A
= 25
o
C,
R
θJA
= 55
o
C/W
R
θJA
= R
θJC
= 2.2
o
C/W
Average Forward Rectified Current (A)
Instantaneous Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
1
T
A
= 100 °C
T
A
= 25 °C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
D = 0.8
7
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
Instantaneous Reverse Current (mA)
8
100
T
A
= 150 °C
T
A
= 125 °C
Average Power Loss (W)
10
6
5
4
3
2
1
0
0
1
2
3
1
T
A
= 100 °C
0.1
T
0.01
D = t
p
/T
t
p
T
A
= 25 °C
0.001
20
40
60
80
100
4
5
6
7
8
9
10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 20-Dec-13
Document Number: 89980
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VE2045C-E3
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
10
Junction to Case
10 000
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p
-p
1000
1
100
10
0.1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.159 (4.04) DIA.
0.143 (3.64) DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.260 (6.6)
0.236 (6.0)
0.603 (15.32)
0.573 (14.55)
1
2
3
0.160 (4.06)
0.140 (3.56)
0.060 (1.50)
0.047 (1.20)
0.560 (14.22)
0.530 (13.46)
0.040 (0.84)
0.024 (0.62)
PIN 1
PIN 3
PIN 2
0.10 (2.54)
0.10 (2.54)
0.022 (0.56)
0.014 (0.36)
Revision: 20-Dec-13
Document Number: 89980
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000
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