The MAX20330 is an overvoltage controller with the VBUS
impedance detection function. The device drives an exter-
nal low R
ON
path for the device that requires a flexible
and adjustable OVLO threshold. The VBUS impedance
detection can detect the soft short on VBUS and warn the
user about the potential connector overheating.
The MAX20330 is designed to drive a single or dual back-
to-back external N-channel MOSFET with a low R
ON
(10mΩ max). An external TVS can be used to protect the
device from a high energy surge if necessary.
The device is available in an 8-bump (0.35mm pitch,
1.77mm x 1.03mm) wafer-level package (WLP) and oper-
ate over the -40ºC to +85°C extended temperature range.
Benefits and Features
● Protects High-Power Portable Devices
•
Wide Operating Input Voltage Protection Range:
2.7V to 36V
•
Ultra-Fast Turn-Off Time: 100nsec
•
Built-In Charge Pump to Drive External N-MOSFET
● Flexible Overvoltage Protection Design
•
I
2
C Adjustable Overvoltage Protection Trip Level
•
Wide Adjustable OVLO Threshold Range from 4V
to 24V (168 steps)
•
Preset Internal Accurate OVLO Thresholds:
6.8V±2%
● Additional Protection Features Increase System
Reliability
• VBUS Short Detection
•
Soft-Start to Minimize In-Rush Current
•
Internal 15ms Startup Debounce
•
Thermal Shutdown Protection
●
Space-Saving
•
8 Bump 0.35mm Pitch 1.77mm x 1.03mm WLP
Ordering Information
appears at end of data sheet.
Applications
●
●
●
●
Smart Phones
Tablets
Phablets
Desktops
19-100269; Rev 1; 6/18
MAX20330
Programmable OVP Controller with
VBUS Short Detection
Absolute Maximum Ratings
(All voltages referenced to GND.)
VBUS to GND (Note 1)
.........................................-0.3V to +40V
GATE to GND .........................
-0.3V to min (VBUS + 0.3V, 40V)
OUT to GND ............................-0.3V
to min (GATE + 0.3V, 40V)
GATE to OUT ..........................................................-0.3V to +6V
SDA, SCL,
INT,
V
CC
to GND ..................................-0.3V to +6V
Continuous Current into all pins .........................................±0.1A
Continuous Power Dissipation (T
A
= +70ºC)
WLP (derate 10.9mW/ºC above +70ºC)
......................872mW
Operating Temperature Range ........................... -40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Soldering Temperature (reflow)
.......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 2)
WLP
Junction-to-Ambient Thermal Resistance (θ
JA
)
.....91.72°C/W
Note 1:
The external TVS clamp voltage should be below the abs max of MAX20330.
Note 2:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
BUS
= 2.7V to 36V, V
CC
= 2.6V to 5.5V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 3.3V, T
A
= +25°C)
(Note 3)
PARAMETER
VBUS
VBUS Startup Voltage
VBUS Supply Current
VBUS Pull Down Resistor
VBUS OVLO Range
Internal Overvoltage Trip
Level
Internal Overvoltage Trip
Hysteresis
VBUS OVLO Resolution
V
CC
V
CC
Voltage Range
V
CC
Supply Current
V
CC
Shutdown Current
GATE
Maximum Gate On Voltage
Gate Off
Soft-Start Comparator
V
GON
V
GOFF
V
SS_THR
220
300
GATE external
leakage <1µA
min (VBUS, 5V)
VBUS = 2.75V
VBUS = 5V, 23V
2.43
4.6
V
5.4
0.5
380
V
mV
V
CC
I
VCC
2.6
V
CC
= 4.2V, manual detection mode
(I
SRC
= 0mA)
3.3
125
2.8
5.5
200
5
V
µA
µA
V
OVLO_R
V
OVLO_F
V
BUS_ST
I
VBUS
R
PD
V
BUS
= 4.2V, I
OUT
= 0mA
Enabled by I
2
C
Shutdown
VBUS rising
VBUS falling
4V – 8V [63]
8V – 16V [63]
12V – 24V [63]
0.5
4
-2
Progra
mmable
0.2
63.5
127
190.5
mV
2.7
250
1
2.75
400
2
24
+2
V
µA
kΩ
V
%
%
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
OUT PROGRAMMABLE PROTECTION
V
CC
= 4.2V, VBUS floating, ENb = 1
www.maximintegrated.com
Maxim Integrated │
2
MAX20330
Programmable OVP Controller with
VBUS Short Detection
Electrical Characteristics (continued)
(V
BUS
= 2.7V to 36V, V
CC
= 2.6V to 5.5V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 3.3V, T
A
= +25°C)
(Note 3)
PARAMETER
ID CURRENT SOURCE
Current Source Accuracy
Current Source Open
Voltage
V
OVSO
I
ID
= 2µA
2
6
Current Source
I
ID
18
54
162
2500
Average Current Source
ADC
Resolution
Voltage step
Full-Scale Error
Noise Filtering
Full Scale
DIGITAL SIGNALS (SDA, SCL,
INT)
Output Low Voltage
Leakage Current
Input Logic-High
Input Logic-Low
Input Leakage Current
TIMING CHARACTERISTICS
VBUS Debounce Time
VBUS Soft-Start Time
VBUS Fast OVP Turn Off
Response Time
Programmable Time
Accuracy
I
2
C Maximum Clock
Frequency
t
DEB
t
SS
t
OFF
VBUS = 4.3V to charge pump on
(OUT = 10% of VBUS), R
LOAD
= 100Ω,
C
LOAD
= 10µF
IGATE = 4µA (typ)
From VBUS > V
OVLO_R
to
V
GATE_TO_SOURCE
= 0.5V,
C
GATE_TO_OUT
= 4nF
-10
400
Progra
mmable
50
100
+10
ms
ms
ns
%
kHz
V
IH
V
IL
I
BUS_LEAK
V
IN
= 0V, V
IN
= 2.6V
-1
V
OL
V
IO
= 3.3V, I
SINK
= 3mA
V
IO
= 2.6V, open-drain
1.3
0.4
+1
-2
100
1.5
0.4
1
8
5.9
+2
bit
mV
%
µs
V
V
µA
V
V
µA
I
ID_AVG
162µA max current, IS_PERIOD ≥ 130x,
ISRC_MAN = 0
2
µA
µA
-5
+5
2
%
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
www.maximintegrated.com
Maxim Integrated │
3
MAX20330
Programmable OVP Controller with
VBUS Short Detection
Electrical Characteristics (continued)
(V
BUS
= 2.7V to 36V, V
CC
= 2.6V to 5.5V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
CC
= 3.3V, T
A
= +25°C)
(Note 3)
PARAMETER
THERMAL PROTECTION
Thermal Shutdown
Thermal Shutdown
Hysteresis
125
20
°C
°C
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Note 3:
All devices are 100% production tested at T
A
= +25°C. Specifications over the operating temperature range are guaranteed
Yamaha Motor Group旗下的i-PULSE有限公司日前已与华尔莱科技（Valor）结为合作伙伴关系，基于Valor的vPlan生产规划工具向i-PULSE组装设备的使用者提供完整的从设计到制造的NPI解决方案。在近期日本东京举办的Protec展会（6/11-6/13）上，i-PULSE首度展出了该新产品并将直接向其客户进行销售。 新产品的名称为“iPlan”，它将提供一系...[详细]
在全球半导体产业因景气不佳而纷传并购、整合之际，两大IT巨头三星、IBM日前却双双宣布，将强化半导体产业投资。 三星电子本周一宣布，已向韩国证券交易所提交一份申请文件，打算2008年投下10.5亿美元，用于升级内存芯片生产线、改进技术工艺，从而提高产能并降低成本。无独有偶。本周二IBM公司宣布，未来3年将投资10亿美元，用于扩充位于纽约州 East Fishkill 的半导体工厂，以消...[详细]
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
