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1N6373HE3_A/C

产品描述ESD 抑制器/TVS 二极管 5.0V 10%,Unidir AEC-Q101 Qualified
产品类别分立半导体    二极管   
文件大小122KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

1N6373HE3_A/C概述

ESD 抑制器/TVS 二极管 5.0V 10%,Unidir AEC-Q101 Qualified

1N6373HE3_A/C规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
Reach Compliance Codeunknown
ECCN代码EAR99
Factory Lead Time9 weeks
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码e3
峰值回流温度(摄氏度)NOT APPLICABLE
端子面层Matte Tin (Sn)
处于峰值回流温度下的最长时间NOT APPLICABLE

文档预览

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ICTE5 thru ICTE18C, 1N6373 thru 1N6386
www.vishay.com
Vishay General Semiconductor
T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Case Style 1.5KE
PRIMARY CHARACTERISTICS
V
WM
V
BR
(uni-directional)
V
BR
(bi-directional)
P
PPM
P
D
I
FSM
T
J
max.
Polarity
Package
5.0 V to 18 V
6.0 V to 21.2 V
9.2 V to 21.2 V
1500 W
6.5 W
200 A
175 °C
Uni-directional, bi-directional
1.5KE
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5
-55 to +175
UNIT
W
A
W
A
V
°C
Revision: 16-Jan-18
Document Number: 88356
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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