RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5223B
THRU
1N5261B
500mW 5% DO-35 ZENER DIODE
Absolute Maximun Ratings (Ta=25
o
C)
Items
Power Dissipation
Power Derating
(above 75
o
C)
Forward Voltage
@If = 10 mA
Vz Tolerence
Junction Temp.
Storage Temp.
Symbol
P
TOT
Ratings
500
4.0
Vf
1.2
5
-65 to 175
-65 to 175
Unit
mW
mW/
o
C
V
%
o
C
o
C
Dimensions
DO-35
2 6 M IN
0 .4 5 7
D IA .
0 .5 5 9
T
J
T
STG
4 .2
m ax.
2 .0
D IA .
m ax.
2 6 M IN
Dimensions in millimeters
Mechanical Data
Items
P a cka g e
C a se
Lead/Fi ni sh
C hi p
Materi als
D O-35
Hermeti cally sealed glass
D ouble Stud/Solder Plati ng
Glass Passi vated
Electrical Characteristics (Ta=25
o
C)
ZENER
VOLTAGE
TYPE
Vz(V)
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
Izt(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
Rz (ohms)
30
30
29
28
24
23
22
19
17
11
7
7
5
Izt(mA0
20
20
20
20
20
20
20
20
20
20
20
20
20
MAX ZENER
IMPEDANCE
MAX ZENER
IMPEDANCE
Izt = 0.25mA
MAXIMUM
REVERSE
CURRENT
TEMP.
COEFF.
dvz
Rz (ohms)
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
VR (V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.6
IR (uA)
75
75
50
25
15
10
5
5
5
5
5
5
3
(%/
o
C)
-0.080
-0.080
-0.075
-0.070
-0.065
-0.060
+/-0.055
+/-0.030
+/-0.030
+/-0.038
+/-0.038
+0.045
+0.050
Electrical Characteristics (Ta=25
o
C)
ZENER
VOLTAGE
TYPE
Vz(V)
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N52459B
1N5260B
1N5261B
Notes:
1. The Electrical characteristics are measured after allowinh the device to stabilize for 20 sec. when mounted
with a 3/8” minimum lead length from the case.
2. Temperature Coefficient (dvz)
a. Izt= 7.5ma, T1= 25
o
C, T2= 125
o
C (1N5223B - 1N5242B)
b. Izt= rated Izt, T1= 25
o
C, T2= 125
o
C (1N5243B - 1N5261B)
MAX ZENER
IMPEDANCE
MAX ZENER
IMPEDANCE
Izt = 0.25mA
MAXIMUM
REVERSE
CURRENT
TEMP.
COEFF.
dvz
Izt(mA)
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
Rz (ohms)
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
Izt(mA0
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
Rz (ohms)
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
VR (V)
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
IR (uA)
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
(%/
o
C)
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
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