HMC375LP3
/
375LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Typical Applications
The HMC375LP3 / HMC375LP3E is ideal for
basestation receivers:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• DECT
Features
Noise Figure: 0.9 dB
Output IP3: +34 dBm
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5V @ 136 mA
50 Ohm Matched Output
Functional Diagram
General Description
The HMC375LP3 & HMC375LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 0.9 dB noise
figure, 17 dB gain and +33 dBm output IP3 from
a single supply of +5V @ 136mA. Input and output
return losses are 14 dB typical with the LNA requiring
minimal external components to optimize the RF input
match, RF ground and DC bias. For applications
which require improved noise figure, please see the
HMC618LP3(E).
Electrical Specifi cations,
T
A
= +25° C, Vs = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for
1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
Supply Current (Idd)
16
16.5
Min.
Typ.
1.8 - 1.9
18.5
0.014
1.0
12
13
35
18.5
19.5
34
136
16
0.021
1.35
15.5
Max.
Min.
Typ.
1.9 - 2.0
17.5
0.014
0.95
13
16
34
18.5
19.5
33.5
136
15
0.021
1.2
15
Max.
Min.
Typ.
2.0 - 2.1
17
0.014
0.9
14
11
34
18
19.5
33
136
14.5
0.021
1.2
13
Max.
Min.
Typ.
2.1 - 2.2
15
0.014
0.9
15
8
34
17.5
19.5
32.5
136
0.021
1.3
Max.
Units
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
dBm
dBm
mA
7 - 74
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC375LP3
/
375LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Broadband Gain & Return Loss
25
15
5
-5
-15
-25
-35
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
S21
S11
S22
Noise Figure vs. Temperature
1.5
+25 C
+85 C
-40 C
7
AMPLIFIERS - LOW NOISE - SMT
7 - 75
1.3
NOISE FIGURE (dB)
RESPONSE (dB)
1.1
0.9
0.7
0.5
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
Gain vs. Temperature
24
22
Noise Figure vs. Vdd
1.5
+4.5 V
+5.0 V
+5.5 V
1.3
20
GAIN (dB)
18
16
14
12
10
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
0.5
1.7
1.8
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
1.1
0.9
0.7
1.9
2
FREQUENCY (GHz)
2.1
2.2
Gain vs. Vdd
22
Reverse Isolation vs. Temperature
-15
-20
20
ISOLATION (dB)
-25
-30
-35
-40
-45
-50
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
+25 C
+85 C
-40 C
GAIN (dB)
18
16
+4.5 V
+5.0 V
+5.5 V
14
12
1.7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC375LP3
/
375LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Input Return Loss vs. Temperature
0
+25 C
-40 C
+85 C
Output Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
2.1
2.2
-10
-10
-15
-15
-20
-20
-25
1.7
1.8
1.9
2
FREQUENCY (GHz)
-25
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
Output IP3 vs. Temperature
40
+25 C
+85 C
-40 C
P1dB & PSAT vs. Temperature
24
PSAT
+25 C
+85 C
-40 C
36
COMPRESSION (dBm)
38
22
IP3 (dBm)
20
34
18
32
16
P1dB
30
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
14
1.7
1.8
1.9
2
2.1
2.2
FREQUENCY (GHz)
Output IP3 vs. Vdd
40
+4.5 V
+5.0 V
+5.5 V
P1dB vs. Vdd
24
22
OUTPUT P1dB (dBm)
20
18
16
14
12
38
IP3 (dBm)
36
34
32
+4.5 V
+5.0 V
+5.5 V
30
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
7 - 76
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC375LP3
/
375LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)(Vs = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 15.6 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+8.0 Vdc
+10 dBm
150 °C
1.015 W
64.1 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
135
136
137
7
AMPLIFIERS - LOW NOISE - SMT
7 - 77
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
HMC375LP3
HMC375LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
375
XXXX
375
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC375LP3
/
375LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Pin Descriptions
Pin Number
1, 3, 4, 6-10,
12, 14, 16
2
Function
N/C
RFIN
Description
No connection necessary.
These pins may be connected to RF/DC ground.
This pin is matched to 50 Ohms with a 13 nH
inductor to ground. See Application Circuit.
Interface Schematic
5
ACG
AC Ground - An external capacitor of 0.01μF to
ground is required for low frequency bypassing.
See Application Circuit for further details.
11
RFOUT
This pin is AC coupled and matched to 50 Ohms.
13,15
Vdd2, Vdd1
Power supply voltage. Choke inductor and bypass
capacitor are required. See application circuit.
GND
Package bottom must be connected to RF/DC ground.
Application Circuit
Note: L1, L2, L3 and C1 should be located as close to pins as possible.
7 - 78
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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