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RS1D-E3/51T

产品描述二极管 - 通用,功率,开关 RECOMMENDED ALT 625-RS1D-E3/5AT
产品类别半导体    分立半导体    二极管与整流器    二极管 - 通用,功率,开关   
文件大小108KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

RS1D-E3/51T概述

二极管 - 通用,功率,开关 RECOMMENDED ALT 625-RS1D-E3/5AT

RS1D-E3/51T规格参数

参数名称属性值
厂商名称Vishay(威世)
产品种类二极管 - 通用,功率,开关
产品Switching Diodes
安装风格SMD/SMT
封装 / 箱体SMA-2
峰值反向电压200 V
最大浪涌电流30 A
If - 正向电流1 A
配置Single
恢复时间150 ns
Vf - 正向电压1.3 V
Ir - 反向电流 5 uA
最小工作温度- 55 C
最大工作温度+ 150 C
封装Bulk
高度2.09 mm
长度4.5 mm
类型Switching Diode
宽度2.79 mm
工厂包装数量2000
单位重量64 mg

文档预览

下载PDF文档
RS1A, RS1B, RS1D, RS1G, RS1J, RS1K
www.vishay.com
Vishay General Semiconductor
Surface Mount Fast Switching Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Fast switching for high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variation
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V
30 A
150 ns, 250 ns, 500 ns
1.3 V
150 °C
DO-214AC (SMA)
Single die
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 90 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
RS1A
RA
50
35
50
RS1B
RB
100
70
100
RS1D
RD
200
140
200
1.0
30
-55 to +150
RS1G
RG
400
280
400
RS1J
RJ
600
420
600
RS1K
RK
800
500
800
V
V
V
A
A
°C
UNIT
Revision: 23-Feb-16
Document Number: 88707
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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