静态随机存取存储器 1.8 or 1.5V 8M x 18 144M
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | GSI Technology |
零件包装代码 | BGA |
包装说明 | LBGA, |
针数 | 165 |
Reach Compliance Code | compliant |
ECCN代码 | 3A991.B.2.B |
Factory Lead Time | 12 weeks |
最长访问时间 | 0.45 ns |
其他特性 | PIPELINED ARCHITECTURE |
JESD-30 代码 | R-PBGA-B165 |
长度 | 17 mm |
内存密度 | 150994944 bit |
内存集成电路类型 | QDR SRAM |
内存宽度 | 18 |
功能数量 | 1 |
端子数量 | 165 |
字数 | 8388608 words |
字数代码 | 8000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 8MX18 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | LBGA |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, LOW PROFILE |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
认证状态 | Not Qualified |
座面最大高度 | 1.5 mm |
最大供电电压 (Vsup) | 1.9 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子形式 | BALL |
端子节距 | 1 mm |
端子位置 | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 15 mm |
GS81302DT19E-333I | GS81302DT19GE-300 | GS81302DT37GE-300I | GS81302DT10E-350 | GS81302DT19GE-400 | GS81302DT19GE-400I | GS81302DT19GE-350I | GS81302DT10GE-450I | GS81302DT10GE-450 | |
---|---|---|---|---|---|---|---|---|---|
描述 | 静态随机存取存储器 1.8 or 1.5V 8M x 18 144M | 静态随机存取存储器 1.8 or 1.5V 8M x 18 144M | 静态随机存取存储器 1.8 or 1.5V 4M x 36 144M | 静态随机存取存储器 1.8 or 1.5V 16M x 9 144M | 静态随机存取存储器 1.8 or 1.5V 8M x 18 144M | 静态随机存取存储器 1.8 or 1.5V 8M x 18 144M | 静态随机存取存储器 1.8 or 1.5V 8M x 18 144M | 静态随机存取存储器 1.8 or 1.5V 16M x 9 144M | 静态随机存取存储器 1.8 or 1.5V 16M x 9 144M |
厂商名称 | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology |
组织 | 8MX18 | 8MX18 | 4MX36 | 16MX9 | 8 M x 18 | 8MX18 | 8MX18 | 16MX9 | 16MX9 |
是否无铅 | 含铅 | 不含铅 | 不含铅 | 含铅 | - | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 不符合 | 符合 | 符合 | 不符合 | - | 符合 | 符合 | 符合 | 符合 |
零件包装代码 | BGA | BGA | BGA | BGA | - | BGA | BGA | BGA | BGA |
包装说明 | LBGA, | LBGA, | LBGA, | LBGA, | - | LBGA, | LBGA, | LBGA, | LBGA, |
针数 | 165 | 165 | 165 | 165 | - | 165 | 165 | 165 | 165 |
Reach Compliance Code | compliant | compliant | compliant | compliant | - | compliant | compliant | compliant | compliant |
ECCN代码 | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | - | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B |
Factory Lead Time | 12 weeks | 12 weeks | 12 weeks | 12 weeks | - | 12 weeks | 12 weeks | 12 weeks | 12 weeks |
最长访问时间 | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | - | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns |
其他特性 | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | - | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE |
JESD-30 代码 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | - | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 |
长度 | 17 mm | 17 mm | 17 mm | 17 mm | - | 17 mm | 17 mm | 17 mm | 17 mm |
内存密度 | 150994944 bit | 150994944 bit | 150994944 bit | 150994944 bit | - | 150994944 bit | 150994944 bit | 150994944 bit | 150994944 bit |
内存集成电路类型 | QDR SRAM | QDR SRAM | QDR SRAM | QDR SRAM | - | QDR SRAM | QDR SRAM | QDR SRAM | QDR SRAM |
内存宽度 | 18 | 18 | 36 | 9 | - | 18 | 18 | 9 | 9 |
功能数量 | 1 | 1 | 1 | 1 | - | 1 | 1 | 1 | 1 |
端子数量 | 165 | 165 | 165 | 165 | - | 165 | 165 | 165 | 165 |
字数 | 8388608 words | 8388608 words | 4194304 words | 16777216 words | - | 8388608 words | 8388608 words | 16777216 words | 16777216 words |
字数代码 | 8000000 | 8000000 | 4000000 | 16000000 | - | 8000000 | 8000000 | 16000000 | 16000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 70 °C | 85 °C | 70 °C | - | 85 °C | 85 °C | 85 °C | 70 °C |
最低工作温度 | -40 °C | - | -40 °C | - | - | -40 °C | -40 °C | -40 °C | - |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | LBGA | LBGA | LBGA | LBGA | - | LBGA | LBGA | LBGA | LBGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | - | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | - | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED | 260 | 260 | NOT SPECIFIED | - | 260 | 260 | 260 | 260 |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.5 mm | 1.5 mm | 1.5 mm | 1.5 mm | - | 1.5 mm | 1.5 mm | 1.5 mm | 1.5 mm |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | - | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | - | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | - | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | - | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | - | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | - | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL |
端子形式 | BALL | BALL | BALL | BALL | - | BALL | BALL | BALL | BALL |
端子节距 | 1 mm | 1 mm | 1 mm | 1 mm | - | 1 mm | 1 mm | 1 mm | 1 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 15 mm | 15 mm | 15 mm | 15 mm | - | 15 mm | 15 mm | 15 mm | 15 mm |
JESD-609代码 | - | e1 | e1 | - | - | e1 | e1 | e1 | e1 |
湿度敏感等级 | - | 3 | 3 | - | - | 3 | 3 | 3 | 3 |
端子面层 | - | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
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