BYV34-400
Rev.01 - 8 June 2018
Dual ultrafast power diode
Product data sheet
1. General description
Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package.
2. Features and benefits
•
•
•
•
•
•
Soft recovery characteristic minimizes power consuming oscillations
Very low on-state losses
Fast switching
High thermal cycling performance
Low thermal resistance
Low forward voltage drop
3. Applications
•
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
O(AV)
I
FRM
I
FSM
Symbol
V
F
t
rr
Parameter
repetitive peak reverse
voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
Parameter
forward voltage
reverse recovery time
SQW; δ = 0.5; T
mb
≤ 115 °C; both diodes
conducting;
Fig.
1;
Fig. 2
δ = 0.5 ; t
p
= 25 μs; T
mb
≤ 115 °C; per diode
SIN; t
p
= 10 ms; T
j(init)
= 25 °C; per diode
SIN; t
p
= 8.3 ms; T
j(init)
= 25 °C; per diode
Conditions
I
F
= 10 A; T
j
= 150 °C;
Fig. 4
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
T
j
= 25 °C;
Fig. 6; Fig. 7
Min
-
-
Conditions
Values
400
20
20
120
132
Typ
0.87
50
Max
1.05
60
Unit
V
A
A
A
A
Unit
V
ns
Absolute maximum rating
Static characteristics
Dynamic characteristics
WeEn Semiconductors
Dual ultrafast power diode
BYV34-400
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
A1
K
A2
anode 1
cathode
anode 2
Simplified outline
mb
Graphic symbol
A1
K
A2
sym125
1 2 3
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BYV34-400
TO-220AB
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
BYV34-400
Marking codes
BYV34-400
BYV34-400
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
8 June 2018
2 / 10
WeEn Semiconductors
Dual ultrafast power diode
BYV34-400
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
T
stg
T
j
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
T
mb
≤ 138 °C; DC
SQW; δ = 0.5; T
mb
≤ 115 °C; both diodes
conducting;
Fig. 1;
Fig. 2
δ = 0.5; t
p
= 25 μs; T
mb
≤ 115 °C; per diode
SIN; t
p
= 10 ms; T
j(init)
= 25 °C; per diode
SIN; t
p
= 8.3 ms; T
j(init)
= 25 °C; per diode
Conditions
Values
400
400
400
20
20
120
132
-40 to 150
150
Unit
V
V
V
A
A
A
A
°C
°C
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 0.94 V; R
s
= 0.01 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; per
diode; maximum values
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 0.94 V; R
s
= 0.01 Ω
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
per diode; maximum values
BYV34-400
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
8 June 2018
3 / 10
WeEn Semiconductors
Dual ultrafast power diode
BYV34-400
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode;
Fig. 3
Min
-
-
-
Typ
-
-
60
Max
1.6
2.4
-
Unit
K/W
K/W
K/W
R
th(j-a)
Fig. 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse width
BYV34-400
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
8 June 2018
4 / 10
WeEn Semiconductors
Dual ultrafast power diode
BYV34-400
10. Characteristics
Table 7. Characteristics
Symbol
V
F
I
R
Parameter
forward voltage
reverse current
Conditions
I
F
= 20 A; T
j
= 25 °C;
Fig. 4
I
F
= 10 A; T
j
= 150 °C;
Fig. 4
V
R
= 400 V; T
j
= 25 °C
V
R
= 400 V; T
j
= 100 °C
Dynamic characteristics
Q
r
t
rr
I
RM
v
FRM
recovered charge
reverse recovery time
peak reverse recovery
current
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/μs;
Fig.
5;
Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
T
j
= 25 °C;
Fig. 6; Fig. 7
I
F
= 10 A; V
R
= 30 V; dI
F
/dt = 50 A/μs;
T
j
= 100 °C;
Fig. 6; Fig. 8
-
-
-
-
50
50
4
2.5
50
60
5
-
nC
ns
A
V
Min
-
-
-
-
Typ
1.1
0.87
10
0.2
Max
1.35
1.05
50
0.6
Unit
V
V
μA
mA
Static characteristics
forward recovery voltage I
F
= 10 A; dI
F
/dt = 100 A/μs; T
j
= 25 °C;
Fig.
9
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
V
o
= 0.94 V; R
s
= 0.01 Ω
Fig. 4. Forward current as a function of forward
voltage; per diode
(1) I
F
= 2 A; T
j
= 25 °C
(2) I
F
= 20 A; T
j
= 25 °C
Fig. 5. Recovered charge as a function of rate of
change of forward current; per diode; maximum
values
BYV34-400
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
8 June 2018
5 / 10
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