DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
1N5059 to 1N5062
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 Jun 19
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
1N5059 to 1N5062
Rugged glass package, using a high
temperature alloyed construction.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
1N5059
1N5060
1N5061
1N5062
V
RWM
crest working reverse voltage
1N5059
1N5060
1N5061
1N5062
V
R
continuous reverse voltage
1N5059
1N5060
1N5061
1N5062
I
F(AV)
average forward current
PARAMETER
repetitive peak reverse voltage
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
200
400
600
800
200
400
600
800
200
400
600
800
2.0
V
V
V
V
V
V
V
V
V
V
V
V
A
UNIT
T
tp
= 45
°C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
amb
= 80
°C;
PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
−
−
0.8
A
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
t = 10 ms half sinewave
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig.5
−
−
−65
−65
50
20
+175
+175
A
mJ
°C
°C
1996 Jun 19
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
1N5059
1N5060
1N5061
1N5062
I
R
t
rr
C
d
reverse current
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.7
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
CONDITIONS
I
F
= 1 A; T
j
= T
j max
; see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
225
450
650
900
−
−
−
−
MIN.
−
−
1N5059 to 1N5062
TYP.
−
−
MAX.
0.8
1.0
UNIT
V
V
−
−
−
−
−
−
3
50
−
−
−
−
1
150
−
−
V
V
V
V
µA
µA
µs
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
1996 Jun 19
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
GRAPHICAL DATA
MBG044
1N5059 to 1N5062
handbook, halfpage
3
handbook, halfpage
1.6
MBG054
IF(AV)
(A)
2
IF(AV)
(A)
1.2
0.8
1
0.4
0
0
40
80
120
160
200
Ttp (°C)
0
0
40
80
120
200
160
Tamb (°C)
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Lead length 10 mm.
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.9.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC745
handbook, halfpage
4
handbook, halfpage
200
MBH388
P
(W)
3
2.5
Tj
2 1.57 1.42
(°C)
2
a=3
100
59
60
61
62
1
0
0
1
2
I
F(AV)
(A)
3
0
0
400
800
VR (V)
1200
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jun 19
4
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
MGC735
MGC734
handbook, halfpage
15
10
3
handbook, halfpage
IR
(µA)
10
2
IF
(A)
10
max
10
5
1
0
0
1
V (V)
F
2
10
−1
0
40
80
120
160
Tj ( C)
o
200
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
V
R
= V
RRMmax
.
Fig.6
Forward current as a function of forward
voltage; maximum values.
Fig.7
Reverse current as a function of junction
temperature; maximum values.
10
2
handbook, halfpage
MBG031
handbook, halfpage
50
25
Cd
(pF)
7
10
50
2
3
1
10
VR (V)
10
2
MGA200
1
f = 1 MHz; T
j
= 25
°C.
Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 Jun 19
5
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