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1N5060

产品描述SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小51KB,共2页
制造商GE Sensing ( Amphenol Advanced Sensors )
官网地址http://www.vishay.com/
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1N5060概述

SILICON, RECTIFIER DIODE

1N5060规格参数

参数名称属性值
端子数量2
元件数量1
状态ACTIVE
包装形状ROUND
包装尺寸LONG FORM
端子形式WIRE
端子涂层TIN LEAD
端子位置AXIAL
包装材料GLASS
结构SINGLE
壳体连接ISOLATED
二极管元件材料SILICON
二极管类型RECTIFIER DIODE

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1N5059 THRU 1N5062
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage -
200 to 800 Volts
ED
*
DO-204AP
Forward Current -
1. 0 Ampere
FEATURES
High temperature metallurgically bonded
construction
1.0 Ampere operation at T
A
=75°C
with no thermal runaway
Typical I
R
less than 0.1µA
Hermetically sealed package
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
High temperature soldering guaranteed:
350°C/10 seconds 0.375” (9.5mm) lead length,
5 lbs. (2.3kg) tension
EN
T
A
P
T
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.240 (6.1)
MAX.
0.150 (3.8)
0.100 (2.5)
DIA.
1.0 (25.4)
MIN.
MECHANICAL DATA
Case:JEDEC
DO-204AP solid glass body
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.02 ounce, 0.56 gram
Dimensions in inches and (millimeters)
*
Brazed-lead assembly is covered by Patent No. 3,930,306
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
1N5059
1N5060
1N5061
1N5062
UNITS
* Maximum repetitive peak reverse voltage
Maximum RMS voltage
* Maximum DC blocking voltage
* Maximum average forward rectified current
0.375” (9.5mm) lead length at T
A
=75°C
* Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
* Maximum instantaneous forward voltage at 1.0A
* Maximum full Load reverse current, full cycle
average 0.375” (9.5mm)
T
A
=25°C
lead length at
T
A
=75°C
* Maximum DC reverse current
T
A
=25°C
at rated DC blocking voltage
T
A
=175°C
Typical reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
* Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
200
140
200
400
280
400
1.0
600
420
600
800
560
800
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R(AV)
150
I
R
t
rr
C
J
R
ΘJA
T
J
, T
STG
50.0
1.2
5.0
100
5.0
300
1.5
15.0
55.0
-65 to +175
200
Amps
Volts
µA
µA
µs
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, lrr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length P.C.B. mounted
*JEDEC registered values
4/98

1N5060相似产品对比

1N5060 1N5059 1N5061 1N5062
描述 SILICON, RECTIFIER DIODE SILICON, RECTIFIER DIODE, DO-204AP 1 A, SILICON, SIGNAL DIODE SILICON, RECTIFIER DIODE, DO-204AP

 
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