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SMBJ51

产品描述600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
产品类别分立半导体    二极管   
文件大小82KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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SMBJ51概述

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ51规格参数

参数名称属性值
是否Rohs认证符合
包装说明R-PDSO-C2
Reach Compliance Code_compli
ECCN代码EAR99
Is SamacsysN
其他特性UL RECOGNIZED, EXCELLENT CLAMPING CAPABILITY
最大击穿电压69.3 V
最小击穿电压56.7 V
击穿电压标称值63 V
最大钳位电压91.1 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散3 W
认证状态Not Qualified
最大重复峰值反向电压51 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30
Base Number Matches1

文档预览

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SMBJ SERIES
Surface Mount Transient Voltage Suppressor
Voltage Range
5.0 to 170 Volts
600 Watts Peak Power
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0 volt to
BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
O
C / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
600 watts peak pulse power capability with a 10 x 1000 us
waveform by 0.01% duty cycle
.082(2.08)
.076(1.93)
SMB/DO-214AA
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.208(5.28)
.200(5.08)
.008(.20)
.004(.10)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode bandexcept bipolar
Standard packaging: 12mm tape (EIA STD RS-481)
Weight: 0.093gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms(
N
ote
O
Symbol
P
PK
Pd
I
FSM
V
F
R
θ
JL
R
θ
JA
T
J
, T
STG
Value
Minimum 600
3
100
3.5 / 5.0
10
55
-65 to + 150
O
Units
Watts
Watts
Amps
Volts
℃/W
O
1)
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3) - Unidirectional Only
Maximum Instantaneous Forward Voltage at
50.0A for Unidirectional Only (Note 4)
Typical Thermal Resistance (Note 5)
Operating and Storage Temperature Range
C
Notes: 1
.
Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25 C Per Fig. 2.
2. Mounted on 0.4 x 0.4" (10 x 10mm) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 pulses Per Minute
Maximum.
4. V
F
=3.5V on SMBJ5.0 thru SMBJ90 Devices and V
F
=5.0V on SMBJ100 thru SMBJ170 Devices.
5. Measured on P.C.B. with 0.27” x 0.27” (7.0mm x 7.0mm) Copper Pad Areas.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 through Types SMBJ170.
2. Electrical Characteristics Apply in Both Directions.
- 602 -

 
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