电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N5233B-T

产品描述DIODE ZENER 500MW DO35
产品类别半导体    分立半导体   
文件大小96KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

1N5233B-T在线购买

供应商 器件名称 价格 最低购买 库存  
1N5233B-T - - 点击查看 点击购买

1N5233B-T概述

DIODE ZENER 500MW DO35

1N5233B-T规格参数

参数名称属性值
电压 - 齐纳(标称值)(Vz)6V
容差±5%
功率 - 最大值500mW
阻抗(最大值)(Zzt)1600 Ohms
不同 Vr 时的电流 - 反向漏电流5µA @ 3.5V
不同 If 时的电压 - 正向(Vf1.1V @ 200mA
工作温度175°C
安装类型通孔
封装/外壳DO-204AH,DO-35,轴向
供应商器件封装DO-35

文档预览

下载PDF文档
1N5221 to 1N5267
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• Standard Zener voltage tolerance is ± 5 % with
a “B” suffix in the ordering code (e.g.: 1N5221B),
suffix “C” is ± 2 % tolerance
• These diodes are also available in MiniMELF
case with the type designation TZM5221 to
TZM5267, SOT-23 case with the type
designations MMBZ5225 to MMBZ5267 and
SOD-123 case with the types designations MMSZ5225 to
MMSZ5267
• AEC-Q101 qualified
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
1.7 to 20
Thermal equilibrium
Single
UNIT
V
mA
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
1N5221B to 1N5267B
1N5221C to 1N5267C
1N5221B to 1N5267B
1N5221C to 1N5267C
ORDERING CODE
1N5221B to 1N5267B-series-TR
10 000 per 13" reel
1N5221C to 1N5267C-series-TR
30 000/box
1N5221B to 1N5267B-series-TAP
1N5221C to 1N5267C-series-TAP
10 000 per ammopack
(52 mm tape)
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
PACKAGE
PACKAGE NAME
DO-35
WEIGHT
125 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
I = 4 mm, T
L
= constant
TEST CONDITION
T
L
25 °C
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
tot
/V
Z
300
175
-65 to +175
1.1
UNIT
mW
mA
K/W
°C
°C
V
Rev. 2.1, 08-Sep-14
Document Number: 85588
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1193  198  1642  568  1417  19  59  46  36  48 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved