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SMDJ-65608EV-45SB: 产品描述128K X 8 STANDARD SRAM, 45 ns, DFP32; 产品类别存储; 文件大小328KB，共15页; 制造商Atmel (Microchip)

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SMDJ-65608EV-45SB概述

128K X 8 STANDARD SRAM, 45 ns, DFP32

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Features

•

Operating Voltage: 5V

•

Access Time: 30, 45 ns

•

Very Low Power Consumption

– Active: 250 mW (Typ)

– Standby: 1 µW (Typ)

– Data Retention: 0.5 µW (Typ)

Wide Temperature Range: -55°C to +125°C

400 Mils Width Packages: FP32 and SB32

TTL Compatible Inputs and Outputs

Asynchronous

Single 5V Supply

Equal Cycle and Access Time

Gated Inputs:

– No Pull-up/down

– Resistors Are Required

QML Q and V with SMD 5962-89598

ESCC B with Specification 9301/047

•

Rad. Tolerant

128K x 8

Very Low Power

5V CMOS SRAM

M65608E

Description

The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an

extremely low standby supply current (Typical value = 0.2 µA) with a fast access time

at 30 ns over the full military temperature range. The high stability of the 6T cell pro-

vides excellent protection against soft errors due to noise.

The M65608E is processed according to the methods of the latest revision of the MIL

STD 883 (class B or S), ESA SCC 9000 or QML.

Rev. 4151I–AERO–03/04

SMDJ-65608EV-45SB相似产品对比

	SMDJ-65608EV-45SB	MMC9-65608EV-30	MMDJ-65608EV-30	MMDJ-65608EV-45	5962-8959847Q6A	SMDJ-65608EV-30SB	SMC9-65608EV-45SB	SMC9-65608EV-30SB	MMC9-65608EV-45	MM0-65608EV-30-E
描述	128K X 8 STANDARD SRAM, 45 ns, DFP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32	128K X 8 STANDARD SRAM, 30 ns, DFP32	128K X 8 STANDARD SRAM, 45 ns, DFP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32	128K X 8 STANDARD SRAM, 30 ns, DFP32	128K X 8 STANDARD SRAM, 45 ns, DIP32	128K X 8 STANDARD SRAM, 30 ns, DIP32	128K X 8 STANDARD SRAM, 45 ns, CDIP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32
是否Rohs认证	-	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	-
厂商名称	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	-	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	-
零件包装代码	-	DIP	DFP	DFP	DIE	DFP	DIP	DIP	DIP	-
包装说明	-	DIP, DIP32,.4	DFP, FL32,.4	DFP, FL32,.4	DIE, PGA66,11X11	DFP, FL32,.4	DIP, DIP32,.4	DIP, DIP32,.4	DIP, DIP32,.4	-
针数	-	32	32	32	-	32	32	32	32	-
Reach Compliance Code	-	compliant	compli	compliant	compli	compli	compli	compli	compli	-
ECCN代码	-	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	-
最长访问时间	-	30 ns	30 ns	45 ns	30 ns	30 ns	45 ns	30 ns	45 ns	-
I/O 类型	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-
JESD-30 代码	-	R-CDIP-T32	R-XDFP-F32	R-XDFP-F32	X-XUUC-N	R-XDFP-F32	R-CDIP-T32	R-CDIP-T32	R-CDIP-T32	-
JESD-609代码	-	e0	e0	e0	e0	e0	e0	e0	e0	-
长度	-	40.64 mm	20.825 mm	20.825 mm	-	20.825 mm	40.64 mm	40.64 mm	40.64 mm	-
内存密度	-	1048576 bit	1048576 bi	1048576 bit	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi	-
内存集成电路类型	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-
内存宽度	-	8	8	8	8	8	8	8	8	-
功能数量	-	1	1	1	1	1	1	1	1	-
端子数量	-	32	32	32	66	32	32	32	32	-
字数	-	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	-
字数代码	-	128000	128000	128000	128000	128000	128000	128000	128000	-
工作模式	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-
最高工作温度	-	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	-
最低工作温度	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-
组织	-	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	-
输出特性	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-
封装主体材料	-	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-
封装代码	-	DIP	DFP	DFP	DIE	DFP	DIP	DIP	DIP	-
封装等效代码	-	DIP32,.4	FL32,.4	FL32,.4	PGA66,11X11	FL32,.4	DIP32,.4	DIP32,.4	DIP32,.4	-
封装形状	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	UNSPECIFIED	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
封装形式	-	IN-LINE	FLATPACK	FLATPACK	UNCASED CHIP	FLATPACK	IN-LINE	IN-LINE	IN-LINE	-
并行/串行	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-
电源	-	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	-
认证状态	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
筛选级别	-	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-PRF-38535 Class Q	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883	-
座面最大高度	-	4.32 mm	2.72 mm	2.72 mm	-	2.72 mm	4.32 mm	4.32 mm	4.32 mm	-
最大待机电流	-	0.00015 A	0.00015 A	0.00015 A	-	0.00015 A	0.00015 A	0.00015 A	0.00015 A	-
最小待机电流	-	2 V	2 V	2 V	4.5 V	2 V	2 V	2 V	2 V	-
最大压摆率	-	0.13 mA	0.13 mA	0.1 mA	-	0.13 mA	0.1 mA	0.13 mA	0.1 mA	-
最大供电电压 (Vsup)	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-
最小供电电压 (Vsup)	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-
标称供电电压 (Vsup)	-	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	-
表面贴装	-	NO	YES	YES	YES	YES	NO	NO	NO	-
技术	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-
温度等级	-	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	-
端子面层	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb) - hot dipped	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
端子形式	-	THROUGH-HOLE	FLAT	FLAT	NO LEAD	FLAT	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-
端子节距	-	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm	-
端子位置	-	DUAL	DUAL	DUAL	UPPER	DUAL	DUAL	DUAL	DUAL	-
总剂量	-	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	-	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	-
宽度	-	10.16 mm	10.415 mm	10.415 mm	-	10.415 mm	10.16 mm	10.16 mm	10.16 mm	-

SMDJ-65608EV-45SB

SMDJ-65608EV-45SB概述

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