®
SMTPB SERIES
TRISIL
TM
MAIN APPLICATIONS
Any sensitive equipment requiring protection
against lightning strikes:
ANALOG AND DIGITAL LINE CARDS
MAIN DISTRIBUTION FRAMES
TERMINALS AND TRANSMISSIONEQUIPMENT
GMS-TUBE REPLACEMENT
DESCRIPTION
The SMTPBxx series has been designedto protect
telecommunication equipment against lightning
and transient induced by AC power lines.
FEATURES
BIDIRECTIONAL CROWBAR PROTECTION.
BREAKDOWN VOLTAGE RANGE:
From 62 V To 270 V.
HOLDING CURRENT: I
H
= 150 mA min
REPETITIVE PEAK PULSE CURRENT :
I
PP
= 100 A, 10/1000
µs.
BENEFITS
NO AGEING AND NO NOISE
IF DESTROYED, THE SMTPB FALLS INTO
SHORT CIRCUIT, STILL ENSURING
PROTECTION
COMPLIES WITH THE
FOLLOWING STANDARDS:
CCITT K20
VDE0433
VDE0878
IEC-1000-4-5
FCC Part 68, lightning surge
type A
FCC Part 68, lightning surge
type B
BELLCORE TR-NWT-001089
First level
BELLCORE TR-NWT-001089
Second level
CNET l31-24
August 1999 - Ed: 2C
SMC
SCHEMATIC DIAGRAM
Peak Surge
Voltage
(V)
4000
4000
4000
level 4
level 4
1500
800
100
2500
1000
500
4000
Voltage
Waveform
(
µ
s)
10/700
10/700
1.2/50
10/700
1.2/50
10/160
10/560
5/320
2/10
10/1000
2/10
0.5/700
Current
Waveform
(
µ
s)
5/310
5/310
1/20
5/310
8/20
10/160
10/560
5/320
2/10
10/1000
2/10
0.8/310
Admissible
Ipp
(A)
100
100
100
100
100
200
100
25
500
100
500
100
Necessary
Resistor
(
Ω
)
-
-
-
-
-
-
-
-
-
-
-
-
1/5
SMTPBxxx
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
P
I
PP
Power dissipation
Peak pulse current
Parameter
T
lead
= 50
°C
10/1000
µs
8/20
µs
2/10
µs
tp = 20 ms
V
RM
Value
5
100
250
500
50
5
- 55 to + 150
+ 150
+ 260
Unit
W
A
I
TSM
dV/dt
T
stg
T
j
T
L
Non repetitive surge peak on-state
current
Critical rate of rise of off-state voltage
Storage temperature range
Maximum junction temperature
A
KV/µs
°C
°C
°C
Maximum lead temperature for soldering during 10 s.
THERMAL RESISTANCES
Symbol
R
th
(j-l)
R
th
(j-a)
Junction to leads
Junction to ambient.
On printed circuit with standard footprint dimensions.
Parameter
Value
20
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
Symbol
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
PP
C
Type
Parameter
Stand-off voltage
Leakage current at stand-off voltage
ContinuousReverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
Marking
I
RM
@ V
RM
max.
Laser
SMTPB62
SMTPB68
SMTPB120
SMTPB200
SMTPB270
W07
W11
W21
W31
W43
µA
2
2
2
2
2
V
56
61
108
180
243
I
R
@ V
R
max.
note1
µA
50
50
50
50
50
V
62
68
120
200
270
V
BO
@ I
BO
max.
note2
V
82
90
160
267
360
max.
mA
800
800
800
800
800
I
H
min.
note3
mA
150
150
150
150
150
C
typ.
note4
pF
160
160
140
130
120
All parameters tested at 25°C, except where indicated.
Note 1:
Note 2:
IR measured at VR guarantees VBRmin
≥
VR
Measured at 50 Hz (1 cycle) - See test circuit 1.
Note 3:
Note 4:
See test circuit 2.
VR = 1V, F = 1MHz. Refer to fig 3 for C versus VR.
2/5
SMTPBxxx
TEST CIRCUIT 1 FOR I
BO
and V
BO
parameters:
tp = 20ms
Auto
Transformer
220V/2A
static
relay.
K
R1
140
R2
240
220V
Vout
IBO
measure
Transformer
220V/800V
5A
D.U.T
V BO
measure
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
V
OUT
Selection
- Device with V
BO
<
200 Volt
- V
OUT
= 250 V
RMS
, R
1
= 140
Ω.
- Device with V
BO
≥
200 Volt
- V
OUT
= 480 V
RMS
, R
2
= 240
Ω.
TEST CIRCUIT 2 for I
H
parameter.
R
D.U.T.
V
BAT
= - 48 V
Surge generator
- V
P
This is a GO-NOGO Test which allows to confirm the holding current (I
H
) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the I
H
value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000
µs.
3) The D.U.T will come back off-state within 50 ms max.
3/5
SMTPBxxx
Fig. 1:
Non repetitive surge peak on-state current
versus overload duration (Tj initial=25°C).
Fig. 2:
Relative variation of holding current versus
junction temperature.
Fig. 3:
Relative variation of junction capacitance
versus reverse applied voltage(typical values).
Note: For V
RM
upper than 56V, the curve is
extrapolated(dotted line).
Fig. 4:
On-state voltage versus on-state current
(typical values).
I
T
(A)
50
Tj=25°C
10
V
T
(V)
1
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
Fig. 5:
Transient thermal impedance junction to
ambient versus pulse duration (for FR4 PC Board
with recommended pad layout).
4/5
SMTPBxxx
ORDER CODE
SM
TPB 100
SURFACE MOUNT
TRISIL PROTECTION 100 A
VOLTAGE
Marking :
Logo, date code, type code.
PACKAGE MECHANICAL DATA.
SMC
DIMENSIONS
E1
REF.
A1
D
Millimeters
Min.
1.90
0.05
2.90
0.15
7.75
6.60
4.40
5.55
0.75
Max.
2.45
0.20
3.2
0.41
8.15
7.15
4.70
6.25
1.60
Inches
Min.
0.075
0.002
0.114
0.006
0.305
0.260
0.173
0.218
0.030
Max.
0.096
0.008
0.126
0.016
0.321
0.281
0.185
0.246
0.063
A2
b
c
E
E
A1
E1
E2
D
b
C
L
A2
E2
L
FOOTPRINT DIMENSIONS
(in millimeters)
SMC
Packaging
: Standardpackaging is in tapeand reel
Weight
: 0.25g.
3.3
2.0
4.2
2.0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
©
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
5/5
MicroPython开源版块
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
