FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
July 2001
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
Diode
General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and ava-
lanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
•
•
•
•
•
•
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125
o
C
• Low Gate Charge . . . . . . . . . 23nC at V
GE
= 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390
Package
JEDEC STYLE TO-247
Symbol
C
E
C
G
JEDEC STYLE TO-220AB
JEDEC STYLE TO-263AB
E
C
G
C
G
E
G
E
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
T
J
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Pulsed Avalanche Energy, I
CE
= 12A, L = 2mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Ratings
600
45
20
108
±20
±30
60A at 600V
150
167
1.33
-55 to 150
mJ
W
W/°C
°C
Units
V
A
A
A
V
V
T
STG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
Package Marking and Ordering Information
Device Marking
30N6S2D
30N6S2D
30N6S2D
Device
FGB30N6S2D
FGP30N6S2D
FGH30N6S2D
Package
TO-263AB
TO-220AB
TO-247
Tape Width
24mm
-
Quantity
800
-
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV
CES
I
CES
I
GES
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
I
C
= 250µA, V
GE
= 0
V
CE
= 600V
T
J
= 25°C
T
J
= 125°C
V
GE
= ± 20V
600
-
-
-
-
-
-
-
-
250
2
±250
V
µA
mA
nA
On State Characteristics
V
CE(SAT)
V
EC
Collector to Emitter Saturation Voltage
Diode Forward Voltage
I
C
= 12A,
V
GE
= 15V
I
EC
= 12A
T
J
= 25°C
T
J
= 125°C
-
-
-
1.95
1.8
2.1
2.5
2.0
2.5
V
V
V
Dynamic Characteristics
Q
G(ON)
V
GE(TH)
V
GEP
Gate Charge
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I
C
= 12A,
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
I
C
= 250µA, V
CE
= 600V
I
C
= 12A, V
CE
= 300V
-
-
3.5
-
23
26
4.3
6.5
29
33
5.0
8.0
nC
nC
V
V
Switching Characteristics
SSOA
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
rr
Switching SOA
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Reverse Recovery Time
T
J
= 150°C, R
G
= 10Ω, V
GE
=
15V, L = 100µH, V
CE
= 600V
IGBT and Diode at T
J
= 25°C,
I
CE
=12A,
V
CE
= 390V,
V
GE
= 15V,
R
G
=10Ω
L = 500µH
Test Circuit - Figure 26
IGBT and Diode at T
J
= 125°C
I
CE
= 12A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 10Ω
L = 500µH
Test Circuit - Figure 26
I
EC
= 12A, dI
EC
/dt = 200A/µs
I
EC
= 1A, dI
EC
/dt = 200A/µs
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6
10
40
53
55
110
100
11
17
73
90
55
160
250
35
25
-
-
-
-
-
-
-
150
-
-
100
100
-
200
350
46
32
A
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
Thermal Characteristics
R
θJC
NOTE:
Thermal Resistance Junction-Case
IGBT
Diode
-
-
-
-
0.75
2.0
°C/W
°C/W
for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss
of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
3.
Turn-Off
2.
Values
Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
I
CE
, DC COLLECTOR CURRENT (A)
70
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V, L = 100mH
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
40
30
20
10
0
25
50
75
100
o
125
150
T
C
, CASE TEMPERATURE ( C)
Figure 1. DC Collector Current vs Case
Temperature
1000
f
MAX
, OPERATING FREQUENCY (kHz)
T
C
75
o
C
Figure 2. Minimum Switching Safe Operating Area
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
V
CE
= 390V, R
G
= 10Ω, T
J
= 125
o
C
10
300
V
GE
= 10V
V
GE
= 15V
8
t
SC
6
I
SC
250
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.49
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 3Ω, L = 200mH, V
CE
= 390V
200
4
150
2
9
10
11
12
13
14
15
100
16
10
1
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
30
V
GE
, GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
18
16
14
12
10
8
6
T
J
= 150
o
C
4
2
0
0.50
T
J
= 25
o
C
T
J
= 125
o
C
DUTY CYCLE < 0.5%, V
GE
= 10V
PULSE DURATION = 250ms
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 4. Short Circuit Withstand Time
18
16
14
12
10
8
6
4
2
0
.5
.75
1
1.25
1.50
T
J
= 25
o
C
1.75
2.0
2.25
T
J
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
=15V
PULSE DURATION = 250ms
T
J
= 125
o
C
0.75
1.00
1.25
1.50
1.75
2.00
2.25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
12
350
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
Typical Performance Curves
(Continued)
400
R
G
= 10Ω, L = 500mH, V
CE
= 390V
350
300
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
250
200
150
100
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
50
0
0
5
10
15
20
25
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
TURN-OFF ENERGY LOSS (µJ)
E
ON2
, TURN-ON ENERGY LOSS (µJ)
600
R
G
= 10Ω, L = 500mH, V
CE
= 390V
500
400
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
300
200
100
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
0
0
5
10
15
20
25
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
16
t
d(ON)I
, TURN-ON DELAY TIME (ns)
R
G
= 10Ω, L = 500µH, V
CE
= 390V
14
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
30
R
G
= 10Ω, L = 500mH, V
CE
= 390V
25
t
rI
, RISE TIME (ns)
12
10
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
8
6
4
T
J
= 25 C, T
J
= 125 C, V
GE
= 15V
2
0
o
o
20
T
J
= 125
o
C, V
GE
= 15V, V
GE
= 10V
15
10
T
J
= 25
o
C, V
GE
= 10V, V
GE
=15V
5
0
5
10
15
20
25
0
0
5
10
15
20
25
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
90
t
d(OFF
) TURN-OFF DELAY TIME (ns)
R
G
= 10Ω, L = 500µH, V
CE
= 390V
80
70
60
50
40
30
20
0
5
10
15
20
25
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
120
R
G
= 10Ω, L = 500µH, V
CE
= 390V
t
fI
, FALL TIME (ns)
100
T
J
= 125
o
C, V
GE
= 10V OR 15V
80
60
T
J
= 25
o
C, V
GE
= 10V OR 15V
40
0
5
10
15
20
25
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
175
V
GE
, GATE TO EMITTER VOLTAGE (V)
16
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
I
G(REF)
= 1mA, R
L
= 25Ω, T
J
= 25
o
C
150
125
14
12
V
CE
= 600V
T
J
= 25 C
100
75
50
25
0
5
6
7
8
9
10
11
12
13
14
15
16
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
J
= 125
o
C
T
J
= -55
o
C
o
10
8
6
V
CE
= 400V
4
V
CE
= 200V
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
Q
G
, GATE CHARGE (nC)
Figure 13. Transfer Characteristic
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
Figure 14. Gate Charge
1.2
R
G
= 10Ω, L = 500mH, V
CE
= 390V, V
GE
= 15V
10
T
J
= 125
o
C, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
1.0
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 24A
0.8
0.6
1
I
CE
= 24A
0.4
I
CE
= 12A
I
CE
= 12A
0.2
I
CE
= 6A
I
CE
= 6A
0.1
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
1.0
10
100
1000
R
G
, GATE RESISTANCE (Ω)
Figure 15. Total Switching Loss vs Case
Temperature
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.4
FREQUENCY = 1MHz
1.2
C, CAPACITANCE (nF)
1.0
0.8
C
IES
0.6
0.4
0.2
C
RES
0.0
0
10
20
30
40
50
60
70
80
90
100
Figure 16. Total Switching Loss vs Gate
Resistance
3.5
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs, T
J
= 25
o
C
3.0
2.5
I
CE
= 24A
I
CE
= 12A
2.0
I
CE
= 6A
C
OES
1.5
6
7
8
9
10
11
12
13
14
15
16
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
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