IF9030: 产品描述Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-52; 产品类别晶体管; 文件大小90KB，共1页; 制造商InterFET; 官网地址http://www.interfet.com/

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IF9030概述

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-52

IF9030规格参数

参数名称	属性值
厂商名称	InterFET
包装说明	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
Is Samacsys	N
其他特性	LOW NOISE
外壳连接	GATE
配置	SINGLE
FET 技术	JUNCTION
最大反馈电容 (Crss)	20 pF
JEDEC-95代码	TO-52
JESD-30 代码	O-MBCY-W3
元件数量	1
端子数量	3
工作模式	DEPLETION MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	0.3 W
认证状态	Not Qualified
表面贴装	NO
端子形式	WIRE
端子位置	BOTTOM
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
Base Number Matches	1

IF9030文档预览

B-40

01/99

IF9030

N-Channel Silicon Junction Field-Effect Transistor

¥ Low-Noise, High Gain Amplifier

Absolute maximum ratings at T

= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

Continuous Forward Gate Current

Continuous Device Power Dissipation

Power Derating

Storage Temperature Range

– 20 V

10 mA

300 mW

2.4 mW/°C

– 65°C to 200°C

At 25°C free air temperature:

Static Electrical Characteristics

IF9030

Min

Max

Unit

Process NJ903L

Test Conditions

Gate Source Breakdown Voltage

Gate Reverse Current

Gate Source Cutoff Voltage

Drain Saturation Current (Pulsed)

Dynamic Electrical Characteristics

(BR)GSS

GSS

GS(OFF)

DSS

– 20

– 0.35

– 0.1

–2

300

= – 1 µA, V

= ØV

= – 10V, V

= ØV

= 10V, I

= 0.5 nA

= 10V, V

= ØV

Common Source

Forward Transconductance

Common Source Input Capacitance

Common Source

Reverse Transfer Capacitance

iss

rss

Typ

= 10V, V

= ØV

= 10V, I

= 5 mA

= 10V, I

= 5 mA

f = 1 kHz

f = 1 MHz

Equivalent Short Circuit

Input Noise Voltage

0.5

nV/√Hz

= 4V, I

= 5 mA

f = 1 kHz

TOÐ52 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate & Case

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287

FAX

(972) 276-3375

www.interfet.com

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