BTA420-800BT
3Q Hi-Com Triac
12 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package
intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This
"series BT" triac will commutate the full RMS current at the maximum rated junction temperature
(T
j(max)
= 150 °C) without the aid of a snubber. It is used in applications where "high junction
operating temperature capability" is required.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
•
•
Applications subject to high temperature
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 122 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C
-
Typ
-
-
-
-
-
10
Max
800
20
200
220
150
50
Unit
V
A
A
A
°C
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BTA420-800BT
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C
V
D
= 12 V; I
T
= 0.1 A; T2- G-; T
j
= 25 °C
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C
Min
-
-
-
-
-
200
Typ
10
10
10
-
1.3
-
Max
50
50
100
40
1.65
-
Unit
mA
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating voltage
V
D
= 12 V; T
j
= 25 °C
I
T
= 10 A; T
j
= 25 °C
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 3.6 A/
ms; I
T
= 8 A; gate open circuit
Dynamic characteristics
dV
com
/dt
10
-
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
BTA420-800BT
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
BTA420-800BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
12 September 2018
2 / 11
WeEn Semiconductors
BTA420-800BT
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
25
I
T(RMS)
(A)
20
003aak700
Conditions
Min
-
Max
800
20
200
220
200
100
2
5
0.5
150
150
003aak702
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 122 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; sine-wave pulse
I
G
= 100 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
50
122 °C
I
T(RMS )
(A)
40
15
30
10
20
5
10
0
-50
0
50
100
T
mb
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 122 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA420-800BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
12 September 2018
3 / 11
WeEn Semiconductors
BTA420-800BT
3Q Hi-Com Triac
30
P
tot
(W)
24
003aak704
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.976
1.570
1.329
1.110
α
117
T
mb(max)
(°C)
123.6
α = 180°
120°
90°
60°
30°
18
130.2
12
136.8
6
143.4
0
0
5
10
15
20
I
T(RMS)
(A)
150
25
α = conduction angle
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
200
160
120
80
40
0
240
003aak705
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA420-800BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
12 September 2018
4 / 11
WeEn Semiconductors
BTA420-800BT
3Q Hi-Com Triac
10
4
I
TSM
(A)
10
3
003aak706
(1)
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA420-800BT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
12 September 2018
5 / 11
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