PMEG6002EB; PMEG6002TV
0.2 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 01 — 24 November 2006
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in ultra small and flat lead
Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
Nexperia
PMEG6002EB
PMEG6002TV
SOD523
SOT666
JEITA
SC-79
-
single
dual isolated
Configuration
Type number
1.2 Features
I
I
I
I
Forward current: I
F
≤
0.2 A
Reverse voltage: V
R
≤
60 V
Very low forward voltage
Ultra small and flat lead SMD plastic packages
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 200 mA
[1]
Conditions
T
amb
≤
25
°C
Min
-
-
-
Typ
-
-
540
Max
0.2
60
600
Unit
A
V
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Nexperia
PMEG6002EB; PMEG6002TV
0.2 A very low V
F
MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pin
SOD523
1
2
cathode
anode
[1]
Pinning
Description
Simplified outline
Symbol
1
1
2
2
sym001
SOT666
1
2
3
4
5
6
[1]
anode (diode 1)
not connected
cathode (diode 2)
anode (diode 2)
not connected
cathode (diode 1)
The marking bar indicates the cathode.
1
2
3
1
2
3
006aaa440
6
5
4
6
5
4
3. Ordering information
Table 4.
Ordering information
Package
Name
PMEG6002EB
PMEG6002TV
SC-79
-
Description
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 6 leads
Version
SOD523
SOT666
Type number
4. Marking
Table 5.
Marking codes
Marking code
B2
1B
Type number
PMEG6002EB
PMEG6002TV
PMEG6002EB_PMEG6002TV_1
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 24 November 2006
2 of 10
Nexperia
PMEG6002EB; PMEG6002TV
0.2 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
P
tot
reverse voltage
forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
PMEG6002EB
PMEG6002TV
Per device
P
tot
total power dissipation
PMEG6002TV
T
j
T
amb
T
stg
[1]
[2]
Parameter
Conditions
Min
-
Max
60
0.2
2
2.5
Unit
V
A
A
A
T
amb
≤
25
°C
t
p
≤
1 ms;
δ ≤
0.25
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[1]
[1]
[2]
[1]
-
-
-
-
-
-
300
200
300
mW
mW
mW
T
amb
≤
25
°C
[1]
[2]
-
-
-
−65
−65
300
400
150
+150
+150
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
PMEG6002EB_PMEG6002TV_1
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 24 November 2006
3 of 10
Nexperia
PMEG6002EB; PMEG6002TV
0.2 A very low V
F
MEGA Schottky barrier rectifiers
6. Thermal characteristics
Table 7.
Symbol
Per device
R
th(j-a)
thermal resistance from
junction to ambient
PMEG6002EB
PMEG6002TV
R
th(j-sp)
thermal resistance from
junction to solder point
PMEG6002EB
PMEG6002TV
[1]
[2]
[3]
[4]
Thermal characteristics
Parameter
Conditions
in free air
[1][2]
[1][2]
[1][3]
[4]
Min
Typ
Max
Unit
-
-
-
-
-
-
400
416
318
K/W
K/W
K/W
-
-
-
-
75
195
K/W
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per diode
V
F
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
reverse current
V
R
= 10 V
V
R
= 60 V
V
R
= 10 V; T
amb
= 100
°C
C
d
[1]
[1]
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
130
190
260
420
540
2
20
310
14
170
230
300
470
600
10
100
-
20
mV
mV
mV
mV
mV
µA
µA
µA
pF
diode capacitance
V
R
= 1 V; f = 1 MHz
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
PMEG6002EB_PMEG6002TV_1
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 24 November 2006
4 of 10
Nexperia
PMEG6002EB; PMEG6002TV
0.2 A very low V
F
MEGA Schottky barrier rectifiers
10
3
I
F
(mA)
10
2
006aaa765
I
R
10
(µA)
10
4
10
3
5
006aaa766
(1)
(2)
(3)
10
2
10
(1)
(2)
(3)
(4)
(5)
10
1
10
−1
10
−2
(4)
1
(5)
10
−1
0
0.2
0.4
0.6
0.8
V
F
(V)
1.0
10
−3
0
20
40
V
R
(V)
60
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
30
C
d
(pF)
20
Fig 2. Reverse current as a function of reverse
voltage; typical values
006aaa767
10
0
0
20
40
V
R
(V)
60
f = 1 MHz; T
amb
= 25
°C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
PMEG6002EB_PMEG6002TV_1
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 24 November 2006
5 of 10
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