4
GBU1001 - GBU1007
Taiwan Semiconductor
10A, 50V - 1000V Glass Passivated Single-Phase Bridge Rectifier
FEATURES
●
●
●
●
●
●
Ideal for printed circuit board
High case dielectric strength of 1500 V
RMS
High surge current capability
Typical I
R
less than 0.1μA
UL Recognized File # E-326243
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
10
50 – 1000
220
150
GBU
Quad
UNIT
A
V
A
°C
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
TV
Monitor
MECHANICAL DATA
● Case: GBU
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Part no. with suffix “H” means AEC-Q101 qualified
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: As marked
● Weight: 4 g (approximately)
GBU
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode)
Rating of fusing ( t<8.3ms)
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
It
T
J
T
STG
1
2
SYMBOL
GBU GBU GBU GBU GBU GBU GBU
1001 1002 1003 1004 1005 1006 1007
GBU GBU GBU GBU GBU GBU GBU
1001 1002 1003 1004 1005 1006 1007
50
35
50
100
70
100
200
140
200
400
280
400
10
220
200
- 55 to +150
- 55 to +150
600
420
600
800
560
800
1000
700
1000
UNIT
V
V
V
A
A
As
°C
°C
2
Version:K1705
4
GBU1001 - GBU1007
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJA
R
ӨJC
LIMIT
21
2
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
=5A, T
J
=25°C
I
F
=10A, T
J
=25°C
(2)
SYMBOL
V
F
TYP
-
-
-
MAX
1.0
1.1
5
500
UNIT
V
V
μA
μA
Reverse current @ rated V
R
per diode
T
J
= 25°C
T
J
=125°C
GBU1001
GBU1002
GBU1003
I
R
-
211
1 MHz, V
R
=4.0V
C
J
94
-
pF
Junction capacitance
GBU1004
GBU1005
GBU1006
GBU1007
-
pF
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
H
PACKING
CODE
C2
GBU100x
(Note 1)
D2
X0
Note:
1. "x" defines voltage from 50V (GBU1001) to 1000V (GBU1007)
*: Optional available
G
GBU
PACKING CODE
SUFFIX(*)
PACKAGE
PACKING
20 / Tube
20 / Tube
Forming
EXAMPLE P/N
EXAMPLE P/N
GBU1006HC2G
PART NO.
GBU1006
PART NO.
SUFFIX
H
PACKING
CODE
C2
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:K1705
4
GBU1001 - GBU1007
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
15
AVERAGE FORWARD CURRENT (A)
1000
Fig.2 Typical Junction Capacitance
GBU1001 - GBU1004
10
CAPACITANCE (pF)
100
GBU1005 - GBU1007
5
RESISTER OR
INDUCTIVE LOAD
WITH HEATSINK
0
0
30
60
90
120
150
f=1.0MHz
Vsig=50mVp-p
10
0.1
1
10
100
REVERSE VOLTAGE (V)
CASE TEMPERATURE (
°
C)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS FORWARD CURRENT (A)
1000
100 10
Fig.4 Typical Forward Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
100
T
J
=125
°
C
1
10
0.1
UF1DLW
T
J
=125°C
T
J
=25°C
(A)
Pulse width
10
1
T
J
=25
°
C
1
0.01
0.001
0.1
0.3
0.6
0.4
0.7
0.5
0.8
0.6
0.9
0.7
1
0.8
0.9
1.1
1
1.2
1.1
1.3
1.2
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
3
Version:K1705
4
GBU1001 - GBU1007
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
225
200
175
150
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
4
Version:K1705
嵌入式系统
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