SS8050
SS8050
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: I
C
=1.5A
• Collector Power Dissipation: P
C
=2W (T
C
=25°C)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
40
25
6
1.5
1
150
-65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE (sat)
V
BE (sat)
V
BE (on)
C
ob
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
=100µA, I
E
=0
I
C
=2mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
V
CE
=1V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=10V, I
C
=50mA
100
9.0
45
85
40
Min.
40
25
6
100
100
300
0.5
1.2
1
V
V
V
pF
MHz
Typ.
Max.
Units
V
V
V
nA
nA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
h
FE
Classification
Classification
h
FE2
B
85 ~ 160
C
120 ~ 200
D
160 ~ 300
©2004 Fairchild Semiconductor Corporation
Rev. B2, August 2004
SS8050
Typical Characteristics
0.5
1000
V
CE
= 1V
I
C
[mA], COLLECTOR CURRENT
I
B
= 3.0mA
0.4
I
B
= 2.5mA
0.3
h
FE
, DC CURRENT GAIN
2.0
100
I
B
= 2.0mA
I
B
= 1.5mA
0.2
10
I
B
= 1.0mA
0.1
I
B
= 0.5mA
1
0.1
0
0.4
0.8
1.2
1.6
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
10000
100
I
C
= 10 I
B
V
CE
= 1V
V
BE
(sat)
1000
I
C
[mA], COLLECTOR CURRENT
10
100
1000
10
100
1
V
CE
(sat)
10
0.1
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
1000
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
I
E
= 0
f = 1MHz
V
CE
= 10V
C
ob
[pF], CAPACITANCE
100
100
10
10
1
1
10
100
1
1
10
100
400
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2004 Fairchild Semiconductor Corporation
Rev. B2, August 2004
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2004 Fairchild Semiconductor Corporation
Rev. I11
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