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FEATURES
1.5 W Output
1
Differential (BTL
2
) Output
Single-Supply Operation: 2.7 V to 5.5 V
Functions Down to 1.75 V
Wide Bandwidth: 4 MHz
Highly Stable, Phase Margin: >80 Degrees
Low Distortion: 0.2% THD @ 1 W Output
Excellent Power Supply Rejection
APPLICATIONS
Portable Computers
Personal Wireless Communicators
Hands-Free Telephones
Speakerphones
Intercoms
Musical Toys and Speaking Games
IN –
IN +
Low Distortion 1.5 Watt
Audio Power Amplifier
SSM2211
*
FUNCTIONAL BLOCK DIAGRAM
V
OUT
A
V
OUT
B
BYPASS
SHUTDOWN
BIAS
V– (GND)
GENERAL DESCRIPTION
The SSM2211 is a high-performance audio amplifier that delivers
1 W RMS of low distortion audio power into a bridge-connected
8
Ω
speaker load, (or 1.5 W RMS into 4
Ω
load). It operates
over a wide temperature range and is specified for single-supply
voltages between 2.7 V and 5.5 V. When operating from batteries,
it will continue to operate down to 1.75 V. This makes the
SSM2211 the best choice for unregulated applications such as toys
and games. Featuring a 4 MHz bandwidth and distortion below
0.2 % THD @ 1 W, superior performance is delivered at higher
power or lower speaker load impedance than competitive units.
The low differential dc output voltage results in negligible losses
in the speaker winding, and makes high value dc blocking ca-
pacitors unnecessary. Battery life is extended by using the
Shutdown mode, which reduces quiescent current drain to
typically 100 nA.
The SSM2211 is designed to operate over the –20°C to +85°C
temperature range. The SSM2211 is available in SO-8 and
LFCSP (Lead Frame Chip Scale Package) surface mount pack-
ages. The SO-8 features the patented Thermal Coastline lead
frame (see Figure 12). The advanced mechanical packaging of the
SSM2211 ensures lower chip temperature and enhanced per-
formance relative to standard packaging options. DIP samples
are available; you should request a special quotation on produc-
tion quantities. An evaluation board is available upon request of
your local Analog Device sales office.
Applications include personal portable computers, hands-free
telephones and transceivers, talking toys, intercom systems and
other low voltage audio systems requiring 1 W output power.
*Protected
by U.S. Patent No. 5,519,576
NOTES
1
1.5 W @ 4
Ω,
25°C ambient, <1% THD, 5 V supply, 4 layer PCB.
2
Bridge Tied Load
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
SSM2211–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(V = 5.0 V, T = 25 C, R = 8
S
A
L
, C
B
= 0.1 F, V
CM
= V
D
/2, unless otherwise noted.)
Min
Typ
4
0.1
3.0
1.3
66
9.5
100
4
86
Max
50
Unit
mV
Ω
V
V
dB
mA
nA
MHz
Degrees
%
%
nV√Hz
Parameter
GENERAL CHARACTERISTICS
Differential Output Offset Voltage
Output Impedance
SHUTDOWN CONTROL
Input Voltage High
Input Voltage Low
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current
Supply Current, Shutdown Mode
DYNAMIC PERFORMANCE
Gain Bandwidth
Phase Margin
AUDIO PERFORMANCE
Total Harmonic Distortion
Total Harmonic Distortion
Voltage Noise Density
Symbol
V
OOS
Z
OUT
V
IH
V
IL
PSRR
I
SY
I
SD
GBP
Ø
0
THD + N
THD + N
e
n
S
Conditions
A
VD
= 2
I
SY
= < 100
µA
I
SY
= Normal
V
S
= 4.75 V to 5.25 V
V
O1
= V
O2
= 2.5 V
Pin 1 = V
DD
, See TPC 29
P = 0.5 W into 8
Ω,
f = 1 kHz
P = 1.0 W into 8
Ω,
f = 1 kHz
f = 1 kHz
A
L
0.15
0.2
85
ELECTRICAL CHARACTERISTICS
(V = 3.3 V, T = 25 C, R = 8
Parameter
GENERAL CHARACTERISTICS
Differential Output Offset Voltage
Output Impedance
SHUTDOWN INPUT
Input Voltage High
Input Voltage Low
POWER SUPPLY
Supply Current
Supply Current, Shutdown Mode
AUDIO PERFORMANCE
Total Harmonic Distortion
Symbol
V
OOS
Z
OUT
V
IH
V
IL
I
SY
I
SD
THD + N
S
, C
B
= 0.1 F, V
CM
= V
D
/2, unless otherwise noted.)
Min
Typ
5
0.1
1.7
1
Max
50
Unit
mV
Ω
V
V
mA
nA
%
Conditions
A
VD
= 2
I
SY
= < 100
µA
V
O1
= V
O2
= 1.65 V
Pin 1 = V
DD
, See TPC 29
P = 0.35 W into 8
Ω,
f = 1 kHz
A
L
5.2
100
0.1
ELECTRICAL CHARACTERISTICS
(V = 2.7 V, T = 25 C, R = 8
Parameter
GENERAL CHARACTERISTICS
Differential Output Offset Voltage
Output Impedance
SHUTDOWN CONTROL
Input Voltage High
Input Voltage Low
POWER SUPPLY
Supply Current
Supply Current, Shutdown Mode
AUDIO PERFORMANCE
Total Harmonic Distortion
Specifications subject to change without notice
, C
B
= 0.1 F, V
CM
= V
S
/2, unless otherwise noted.)
Min
Typ
5
0.1
1.5
0.8
4.2
100
0.1
Max
50
Unit
mV
Ω
V
V
mA
nA
%
Symbol
V
OOS
Z
OUT
V
IH
V
IL
I
SY
I
SD
THD + N
Conditions
A
VD
= 2
I
SY
= < 100
µA
I
SY
= Normal
V
O1
= V
O2
= 1.35 V
Pin 1 = V
DD
, See TPC 29
P = 0.25 W into 8
Ω,
f = 1 kHz
–2–
REV. A
SSM2211
ABSOLUTE MAXIMUM RATINGS
1, 2
PIN CONFIGURATIONS
8-Lead SOIC
(SO-8)
SHUTDOWN 1
BYPASS 2
8 V
OUT
B
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DD
Common Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . . V
DD
ESD Susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000 V
Storage Temperature Range . . . . . . . . . . . . 65°C to +150°C
Operating Temperature Range . . . . . . . . . . . 20°C to +85°C
Junction Temperature Range . . . . . . . . . . . . 65°C to +165°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C
NOTES
1
Absolute maximum ratings apply at 25°C, unless otherwise noted.
2
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; the functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
7 –V
TOP VIEW
+IN 3 (Not to Scale) 6 +V
–IN 4
5 V
OUT
A
8-Lead LFCSP
(CP-8)
SHUTDOWN 1
BYPASS 2
8 V
OUT
B
Package Type
8-Lead LFCSP (CP)
2
8-Lead SOIC (S)
8-Lead PDIP (P)
3
JA
1
JC
Units
°C/W
°C/W
°C/W
7 –V
TOP VIEW
+IN 3 (Not to Scale) 6 +V
–IN 4
5 V
OUT
A
50
98
103
43
43
NOTES
1
For the SOIC package,
θ
JA
is measured with the device soldered to a 4-layer
printed circuit board.
2
For the LFCSP package,
θ
JA
is measured with exposed lead frame soldered to
the printed circuit board.
3
Special order only.
8-Lead Plastic DIP
(N-8)
SHUTDOWN 1
BYPASS 2
8 V
OUT
B
7 –V
TOP VIEW
+IN 3 (Not to Scale) 6 +V
–IN 4
5 V
OUT
A
ORDERING GUIDE
Model
SSM2211CP-Reel
SSM2211S
SSM2211S-Reel
SSM2211S-Reel7
SSM2211P
*Special
order only.
Temperature
Range
–20°C to +85°C
–20°C to +85°C
–20°C to +85°C
–20°C to +85°C
–20°C to +85°C
Package
Description
8-Lead LFCSP
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead PDIP
Package
Options
CP-8
SO-8
SO-8
SO-8
N-8
*
Brand
B5A
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the SSM2211 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. A
–3–
SSM2211–Typical Performance Characteristics
10
T
A
= 25 C
V
DD
= 5V
A
VD
= 2 (BTL)
R
L
= 8
P
L
= 500mW
10
C
B
= 0
C
B
= 0.1 F
10
THD + N – %
THD + N – %
THD + N – %
1
C
B
= 0
1
C
B
= 1 F
C
B
= 0.1 F
1
C
B
= 1 F
C
B
= 0.1 F
C
B
= 1 F
0.1
0.01
20
0.1
100
1k
FREQUENCY – Hz
10k 20k
0.01
20
T
A
= 25 C
V
DD
= 5V
A
VD
= 10 (BTL)
R
L
= 8
P
L
= 500mW
100
1k
FREQUENCY – Hz
10k 20k
0.1
0.01
20
T
A
= 25 C
V
DD
= 5V
A
VD
= 20 (BTL)
R
L
= 8
P
L
= 500mW
100
1k
FREQUENCY – Hz
10k 20k
TPC 1. THD+N vs. Frequency
TPC 2. THD+N vs. Frequency
TPC 3. THD+N vs. Frequency
10
THD + N – %
THD + N – %
THD + N – %
1
T
A
= 25 C
V
DD
= 5V
A
VD
= 2 (BTL)
R
L
= 8
P
L
= 1W
10
C
B
= 0
10
C
B
= 0.1 F
C
B
= 0
1
C
B
= 0.1 F
1
C
B
= 1 F
C
B
= 0.1 F
C
B
= 1 F
0.1
T
A
= 25 C
V
DD
= 5V
A
VD
= 10 (BTL)
R
L
= 8
P
L
= 1W
100
1k
FREQUENCY – Hz
10k 20k
0.1
C
B
= 1 F
0.1
0.01
20
100
1k
FREQUENCY – Hz
10k 20k
0.01
20
0.01
20
T
A
= 25 C
V
DD
= 5V
A
VD
= 20 (BTL)
R
L
= 8
P
L
= 1W
100
1k
FREQUENCY – Hz
10k 20k
TPC 4. THD+N vs. Frequency
TPC 5
.
THD+N vs. Frequency
TPC 6. THD+N vs. Frequency
10
THD + N – %
THD + N – %
0.1
0.1
THD + N –%
T
A
= 25 C
V
DD
= 5V
A
VD
= 2 (BTL)
R
L
= 8
FREQUENCY = 20Hz
1 C
B
= 0.1 F
10
T
A
= 25 C
V
DD
= 5V
A
VD
= 2 (BTL)
R
L
= 8
FREQUENCY = 1kHz
1 C
B
= 0.1 F
10
T
A
= 25 C
V
DD
= 5V
A
VD
= 2 (BTL)
R
L
= 8
FREQUENCY = 20kHz
1 C
B
= 0.1 F
0.1
0.01
20n
0.1
P
OUTPUT
– W
1
2
0.01
20n
0.1
P
OUTPUT
– W
1
2
0.01
20n
0.1
P
OUTPUT
– W
1
2
TPC 7. THD+N vs. P
OUTPUT
TPC 8. THD+N vs. P
OUTPUT
TPC 9. THD+N vs. P
OUTPUT
–4–
REV. A
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