VS-EPU6006LHN3
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt
®
FEATURES
• Ultrafast recovery time
Cathode to base
2
• Low forward voltage drop
• 175 °C operating junction temperature
• Designed and qualified
commercial qualification
according
to
2
1
1
Cathode
3
Anode
• AEC-Q101 qualified meets JESD 201 class 1
whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
3
TO-247AD 2L
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AD 2L
60 A
600 V
1.05 V
32 ns
175 °C
Single die
VS-EPU60... series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current in DC
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 116 °C
T
C
= 25 °C, t
p
= 8.3 ms; half sine wave
TEST CONDITIONS
MAX.
600
60
600
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
V
F
TEST CONDITIONS
I
R
= 100 μA
I
F
= 60 A
Forward voltage
I
F
= 60 A, T
J
= 125 °C
I
F
= 60 A, T
J
= 175 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
TYP.
-
1.2
1.1
1.05
0.2
-
38
MAX.
-
1.5
1.3
1.2
30
200
-
μA
pF
V
UNITS
Revision: 23-Jan-17
Document Number: 95957
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPU6006LHN3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 60 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
32
110
200
10
19
530
1900
MAX.
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heat sink
Weight
Mounting torque
Marking device
Case style: TO-247AD 2L
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
-55
-
-
-
-
-
6
(5)
TYP.
-
-
-
0.5
6
0.21
-
MAX.
175
0.65
70
-
-
-
1.2
(10)
g
oz.
kgf. cm
(lbf
in)
°C/W
UNITS
°C
EPU6006LH
Revision: 23-Jan-17
Document Number: 95957
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPU6006LHN3
www.vishay.com
Vishay Semiconductors
1000
175 °C
I
F
- InstantaneousForward Current (A)
1000
I
R
- Reverse Current (µA)
100
150 °C
10
125 °C
1
0.1
25 °C
0.01
0.001
100
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 25 °C
1
0.0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
Z
thJC
- Thermal Impedance (A)
D = 0.5
D = 0.2
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Single
Pulse
(Thermal Resistance)
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 23-Jan-17
Document Number: 95957
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPU6006LHN3
www.vishay.com
Vishay Semiconductors
260
240
220
200
180
I
F
= 60 A, 125 °C
180
Allowable Case Temperature (°C)
170
160
150
140
t
rr
(ns)
130
120
110
100
90
80
70
0
20
40
60
80
100
Square
wave (d = 0.5)
rated V
R
applied
DC
160
140
120
100
80
60
40
100
1000
I
F
= 60 A, 25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
120
RMS Limit
4500
4000
3500
Average Power Loss (W)
100
80
3000
I
F
= 60 A, 125 °C
Q
rr
(nC)
60
40
20
0
0
20
40
60
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
2500
2000
1500
1000
500
I
F
= 60 A, 25 °C
typical value
80
100
0
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 23-Jan-17
Document Number: 95957
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPU6006LHN3
www.vishay.com
(3)
Vishay Semiconductors
t
rr
t
a
t
b
I
F
0
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
-
-
-
-
-
E
2
P
3
U
4
60
5
06
6
L
7
H
8
N3
9
Vishay Semiconductors product
Circuit configuration:
• E = single diode 2 pins
P = TO-247
U = ultrafast recovery time
Current code (60 = 60 A)
6
7
8
9
-
-
-
-
Voltage code (06 = 600 V)
L = long lead
H = AEC-Q101 qualified
Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-EPU6006LHN3
QUANTITY PER TUBE
25
MINIMUM ORDER QUANTITY
500
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
TO-247AD 2L
www.vishay.com/doc?95536
www.vishay.com/doc?95648
Revision: 23-Jan-17
Document Number: 95957
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
