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RJ1U330AAFRGTL

产品描述NCH 250V/33A POWER MOSFET
产品类别分立半导体    晶体管   
文件大小227KB,共5页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准
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RJ1U330AAFRGTL概述

NCH 250V/33A POWER MOSFET

RJ1U330AAFRGTL规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ROHM(罗姆半导体)
包装说明SMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time16 weeks
雪崩能效等级(Eas)74.8 mJ
外壳连接DRAIN
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压250 V
最大漏极电流 (ID)33 A
最大漏源导通电阻0.105 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
湿度敏感等级1
元件数量1
端子数量2
工作模式ENHANCEMENT MODE
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型N-CHANNEL
最大脉冲漏极电流 (IDM)132 A
表面贴装YES
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间10
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

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Tape and Packing
Product
Transistor / MOSFET
Package TO-263S (LPTS,D2-PAK)
Type TL
1. Components description (Only for reference)
10.0
4.5
1.3
9.0
13.1
0.4
2. Taping dimensions
1.75±0.1
5.08
4.0±0.05
2.0±0.1
Unit
mm
Φ1.5
+0.1
-0
2
+0.1
-0
0.3±0.1
24±0.1
11.5±0.1
13.6±0.2
10.5±0.2
21.5
5.0±0.2
Unit : mm
12.0±0.1
Note) Feed holes might be cover with the adhesive tape, but nothing will affect for using by that.
3. Tape and packing specification
3-1. Direction of tape winding
Connection heat radiation fin comes to feeding hole side. The direction shall be one in a reel.
3-2. Cumulative pitch tolerance
The cumulative pitch tolerance of the mold for producing the carrier tape shall be within ±0.2mm
per 10pitches.
3-3. The minimum radius to bend the carrier tape
Carrier tape shall be flexible enough to protect from no component and damage under a minimum
radius of 50mm. However it shall be defined only inside of carrier tape.
3-4. The material of carrier tape
Special carbon paints are coated both sides of polystyrene.
3-5. Failure Rate
Incidence
Continuous missing
Discontinuous missing
0%
Max.0.1%/reel
Remark
 Except
leader and trail portion
www.rohm.com
©2016 ROHM Co., Ltd. All rights reserved
1/4
+0.2
-0.1
2016.1 - Rev.A

RJ1U330AAFRGTL相似产品对比

RJ1U330AAFRGTL RSJ250P10 R6011KNJTL R6015KNJTL R6024KNJTL R6004KNJTL R6009KNJTL R6020KNJTL
描述 NCH 250V/33A POWER MOSFET 25 A, 100 V, 0.063 ohm, P-CHANNEL, Si, POWER, MOSFET MOSFET N-CHANNEL 600V 11A TO263 NCH 600V 15A POWER MOSFET MOSFET N-CHANNEL 600V 24A LPTS MOSFET N-CHANNEL 600V 4A TO263 MOSFET N-CHANNEL 600V 9A TO263 NCH 600V 20A POWER MOSFET
是否Rohs认证 符合 - - 符合 符合 - 符合 符合
厂商名称 ROHM(罗姆半导体) - - ROHM(罗姆半导体) ROHM(罗姆半导体) - ROHM(罗姆半导体) ROHM(罗姆半导体)
包装说明 SMALL OUTLINE, R-PSSO-G2 - - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 - TO-263, D2PAK-3/2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant - - compliant compliant - compliant compliant
ECCN代码 EAR99 - - EAR99 EAR99 - EAR99 EAR99
Factory Lead Time 16 weeks - - 18 weeks 18 weeks - 18 weeks 18 weeks
雪崩能效等级(Eas) 74.8 mJ - - 284 mJ 497 mJ - 153 mJ 418 mJ
外壳连接 DRAIN - - DRAIN DRAIN - DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 250 V - - 600 V 600 V - 600 V 600 V
最大漏极电流 (ID) 33 A - - 15 A 24 A - 9 A 20 A
最大漏源导通电阻 0.105 Ω - - 0.29 Ω 0.165 Ω - 0.535 Ω 0.196 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-263AB - - TO-263AB TO-263AB - TO-263AB TO-263AB
JESD-30 代码 R-PSSO-G2 - - R-PSSO-G2 R-PSSO-G2 - R-PSSO-G2 R-PSSO-G2
湿度敏感等级 1 - - 1 1 - 1 1
元件数量 1 1 - 1 1 - 1 1
端子数量 2 2 - 2 2 - 2 2
工作模式 ENHANCEMENT MODE - - ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 - - 260 260 - NOT SPECIFIED 260
极性/信道类型 N-CHANNEL - - N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 132 A - - 45 A 72 A - 27 A 60 A
表面贴装 YES Yes - YES YES - YES YES
端子形式 GULL WING GULL WING - GULL WING GULL WING - GULL WING GULL WING
端子位置 SINGLE SINGLE - SINGLE SINGLE - SINGLE SINGLE
处于峰值回流温度下的最长时间 10 - - 10 10 - NOT SPECIFIED 10
晶体管应用 SWITCHING SWITCHING - SWITCHING SWITCHING - SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON - SILICON SILICON - SILICON SILICON

 
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