
NCH 250V/33A POWER MOSFET
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | ROHM(罗姆半导体) |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 16 weeks |
| 雪崩能效等级(Eas) | 74.8 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 250 V |
| 最大漏极电流 (ID) | 33 A |
| 最大漏源导通电阻 | 0.105 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 260 |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 132 A |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 10 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |

| RJ1U330AAFRGTL | RSJ250P10 | R6011KNJTL | R6015KNJTL | R6024KNJTL | R6004KNJTL | R6009KNJTL | R6020KNJTL | |
|---|---|---|---|---|---|---|---|---|
| 描述 | NCH 250V/33A POWER MOSFET | 25 A, 100 V, 0.063 ohm, P-CHANNEL, Si, POWER, MOSFET | MOSFET N-CHANNEL 600V 11A TO263 | NCH 600V 15A POWER MOSFET | MOSFET N-CHANNEL 600V 24A LPTS | MOSFET N-CHANNEL 600V 4A TO263 | MOSFET N-CHANNEL 600V 9A TO263 | NCH 600V 20A POWER MOSFET |
| 是否Rohs认证 | 符合 | - | - | 符合 | 符合 | - | 符合 | 符合 |
| 厂商名称 | ROHM(罗姆半导体) | - | - | ROHM(罗姆半导体) | ROHM(罗姆半导体) | - | ROHM(罗姆半导体) | ROHM(罗姆半导体) |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | - | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | - | TO-263, D2PAK-3/2 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compliant | - | - | compliant | compliant | - | compliant | compliant |
| ECCN代码 | EAR99 | - | - | EAR99 | EAR99 | - | EAR99 | EAR99 |
| Factory Lead Time | 16 weeks | - | - | 18 weeks | 18 weeks | - | 18 weeks | 18 weeks |
| 雪崩能效等级(Eas) | 74.8 mJ | - | - | 284 mJ | 497 mJ | - | 153 mJ | 418 mJ |
| 外壳连接 | DRAIN | - | - | DRAIN | DRAIN | - | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 250 V | - | - | 600 V | 600 V | - | 600 V | 600 V |
| 最大漏极电流 (ID) | 33 A | - | - | 15 A | 24 A | - | 9 A | 20 A |
| 最大漏源导通电阻 | 0.105 Ω | - | - | 0.29 Ω | 0.165 Ω | - | 0.535 Ω | 0.196 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | - | - | TO-263AB | TO-263AB | - | TO-263AB | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 | - | - | R-PSSO-G2 | R-PSSO-G2 | - | R-PSSO-G2 | R-PSSO-G2 |
| 湿度敏感等级 | 1 | - | - | 1 | 1 | - | 1 | 1 |
| 元件数量 | 1 | 1 | - | 1 | 1 | - | 1 | 1 |
| 端子数量 | 2 | 2 | - | 2 | 2 | - | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | - | - | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | - | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | - | SMALL OUTLINE | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 260 | - | - | 260 | 260 | - | NOT SPECIFIED | 260 |
| 极性/信道类型 | N-CHANNEL | - | - | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 132 A | - | - | 45 A | 72 A | - | 27 A | 60 A |
| 表面贴装 | YES | Yes | - | YES | YES | - | YES | YES |
| 端子形式 | GULL WING | GULL WING | - | GULL WING | GULL WING | - | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | - | SINGLE | SINGLE | - | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 10 | - | - | 10 | 10 | - | NOT SPECIFIED | 10 |
| 晶体管应用 | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | - | SILICON | SILICON | - | SILICON | SILICON |
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