VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
IGBT SIP Module (Fast IGBT)
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED
®
soft ultrafast diodes
• Optimized for medium speed, see fig. 1 for
current vs. frequency curve
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SIP
(IMS-2)
PRIMARY CHARACTERISTICS
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
600 V
V
CES
I
RMS
per phase (3.1 kW total)
with T
C
= 90 °C
T
J
Supply voltage
Power factor
Modulation depth See fig. 1
V
CE(on)
(typical)
at I
C
= 4.8 A, 25 °C
Speed
Package
Circuit configuration
11 A
125 °C
360 V
DC
0.8
115 %
1.41 V
1 kHz to 8 kHz
SIP
Three phase inverter
DESCRIPTION
The IGBT technology is the key to the advanced line of IMS
(Insulated Metal Substrate) power modules. These modules
are more efficient than comparable bipolar transistor
modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each
IGBT
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each
IGBT
Operating junction and
storage temperature range
Soldering temperature
Mounting torque
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
P
D
T
J
, T
Stg
For 10 s
6-32 or M3 screw
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 100 °C
Repetitive rating; V
GE
= 20 V,
pulse width limited by maximum
junction temperature. See fig. 20
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 μH, R
G
= 50
See fig. 19
T
C
= 100 °C
TEST CONDITIONS
MAX.
600
8.8
4.8
26
A
800
3.4
26
± 20
2500
23
9.1
-40 to +150
300 (0.063" (1.6 mm) from case)
5 to 7
(0.55 to 0.8)
lbf · in
(N · m)
V
V
RMS
W
UNITS
V
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each diode, one diode in conduction
Case to sink, flat, greased surface
Weight of module
SYMBOL
R
thJC
(IGBT)
R
thJC
(diode)
R
thCS
(module)
TYP.
-
-
0.1
20 (0.7)
MAX.
5.5
9.0
-
-
g (oz.)
°C/W
UNITS
Revision: 25-Oct-17
Document Number: 94361
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V
(BR)CES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
Pulse width
80 μs, duty factor
0.1 %
V
GE
= 0 V, I
C
= 1.0 mA
I
C
= 4.8 A
Collector to emitter saturation voltage
Gate threshold voltage
Gate to emitter leakage current
Temperature coeff. of threshold voltage
Forward transconductance
V
CE(on)
V
GE(th)
I
GES
V
GE(th)
/T
J
g
fe
I
CES
I
C
= 8.8 A
I
C
= 4.8 A, T
J
= 150 °C
V
CE
= V
GE
, I
C
= 250 μA
V
GE
= ± 20 V
V
GE
= 0 V, I
C
= 1.0 mA
V
CE
= 100 V, I
C
= 4.8 A
Pulse width 5.0 μs; single shot
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
Diode forward voltage drop
V
FM
I
C
= 8.0 A
I
C
= 8.0 A, T
J
= 150 °C
See fig. 13
V
GE
= 15 V
See fig. 2, 5
MIN.
600
-
-
-
-
3.0
-
-
2.9
-
-
-
-
TYP.
-
0.72
1.41
1.66
1.42
-
-
-11
5.0
-
-
1.4
1.3
MAX.
-
-
1.7
-
-
6.0
± 100
-
-
250
1700
1.7
1.6
V
nA
mV/°C
S
V
UNITS
V
V/°C
Temperature coeff. of breakdown voltage
V
(BR)CES
T
J
Zero gate voltage collector current
μA
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn on)
Gate to emitter charge (turn on)
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse recovery current
Diode reverse recovery charge
Diode peak rate of fall of recovery during t
b
SYMBOL
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
dI
(rec)M
/dt
T
J
= 150 °C,
I
C
= 4.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50
Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18
V
GE
= 0 V
V
CC
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
See fig. 14
See fig. 15
See fig. 16
See fig. 17
T
J
= 25 °C
I
C
= 4.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50
Energy losses include “tail” and
diode reversev recovery.
See fig. 9, 10, 18
TEST CONDITIONS
I
C
= 4.8 A
V
CC
= 400 V
See fig. 8
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
See fig. 7
-
-
-
-
-
I
F
= 8.0 A
V
R
= 200 V
dI/dt = 200 A/μs
-
-
-
-
-
TYP.
30
4.0
13
49
22
200
214
0.23
0.33
0.45
48
25
435
364
0.93
340
63
5.9
37
55
3.5
4.5
65
124
240
210
MAX.
45
6.0
20
-
-
300
320
-
-
0.70
-
-
-
-
-
-
-
-
55
90
50
8.0
138
360
-
-
ns
A
nC
A/μs
pF
mJ
ns
mJ
ns
nC
UNITS
Revision: 25-Oct-17
Document Number: 94361
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
2.63
9
8
7
T
C
= 90 °C
T
J
= 125 °C
Power factor = 0.8
Modulation depth = 1.15
V
CC
= 50 % of rated voltage
2.34
2.05
1.75
1.46
1.17
0.88
0.58
0.29
6
5
4
3
2
1
0
0.1
1
10
0.00
100
f - Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
I
C
- Collector to Ermitter Current (A)
T
J
= 25 °C
T
J
= 150 °C
10
Maximum DC Collector Current (A)
100
10
8
6
4
2
V
GE
= 15 V
20 µs pulse width
1
0
1
10
25
50
75
100
125
150
V
CE
- Collector to Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
T
C
- Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
V
CE
- Collector to Emitter Voltage (V)
I
C
- Collector to Emitter Current (A)
100
2.5
V
GE
= 15 V
80 µs pulse width
I
C
= 9.6 A
T
J
= 150 °C
10
2.0
I
C
= 4.8 A
1.5
T
J
= 25 °C
I
C
= 2.4 A
V
CC
= 50 V
5 µs pulse width
1
5
6
7
8
9
10
11
12
13
14
1.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V
GE
- Gate to Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
T
J
- Junction Temperature (°C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 25-Oct-17
Document Number: 94361
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Total Output Power (kW)
Load Current (A)
VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Thermal Impedance
1
P
DM
0.1
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
0.01
0.00001
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
1000
C - Capacitance (pF)
800
Total Switching Losses (mJ)
V
GE
= 0 V, f = 1 MHz
C
ies
= C
ge
+ C
ce
shorted
C
res
= C
gc
C
oes
= C
ce
+ C
gc
0.46
0.45
V
CC
= 480 V
V
GE
= 15 V
T
J
= 25 °C
I
C
= 4.8 A
600
C
ies
0.44
400
200
C
oes
C
res
0.43
0
1
10
100
0.42
10
20
30
40
50
V
CE
- Collector to Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
R
G
- Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
20
V
GE
- Gate to Emitter Voltage (V)
16
Total Switching Losses (mJ)
V
CC
= 400 V
I
C
= 4.8 A
10
R
G
= 50
Ω
V
GE
= 15 V
V
CC
= 480 V
12
I
C
= 9.6 A
1
8
I
C
= 4.8 A
I
C
= 2.4 A
4
0
0
6
12
18
24
30
0.1
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
Q
G
- Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
T
J
- Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Revision: 25-Oct-17
Document Number: 94361
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
100
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
2.0
Total Switching Losses (mJ)
1.5
R
G
= 50
Ω
T
J
= 150 °C
V
CC
= 480 V
V
GE
= 15 V
80
1.0
t
rr
(ns)
60
I
F
= 8.0 A
40
I
F
= 4.0 A
0.5
20
0.0
0
2
4
6
8
10
0
100
1000
I
C
- Collector to Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
dI
F
/dt (A/µs)
Fig. 14 - Typical Reverse Recovery Time vs. dI
F
/dt
I
C
- Collector to Emitter Current (A)
100
100
V
GE
= 20 V
T
J
= 125 °C
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
Safe operating area
10
I
IRRM
- (A)
I
F
= 16 A
10
I
F
= 8.0 A
I
F
= 4.0 A
1
1
10
100
1000
1
100
1000
V
CE
- Collector to Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
dI
F
/dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dI
F
/dt
I
F
- Instantaneous Forward Current (A)
100
500
400
10
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
Q
rr
- (nC)
300
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
I
F
= 16 A
200
I
F
= 8.0 A
100
I
F
= 4.0 A
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
100
1000
V
FM
- Forward Voltage Drop
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
dI
F
/dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dI
F
/dt
Revision: 25-Oct-17
Document Number: 94361
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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